• Journal of the Korea Convergence Society
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• v.8 no.11
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• pp.43-48
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• 2017

Semiconductors are leading the development of industrial technology, leading to miniaturization and weight reduction of electronic products as a leading technology, we are dragging the electronic industry market Especially, the semiconductor manufacturing process is composed of highly accurate and complicated processes, and effective production is required Recently, a vision system combining a computer and a camera is utilized for defect detection In addition, the demand for a system for measuring the shape of a fine pattern processed by a special process is rapidly increasing. In this paper, we propose a vision algorithm using mask image to detect scratch defect of semiconductor pockage. When applied to the manufacturing process of semiconductor packages via the proposed system, it is expected that production management can be facilitated, and efficiency of production will be enhanced by failure judgment of high-speed packages.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1220-1224
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• 2003

In this paper, we measured the radiation dose of a fuel handling machine of the CANDU type Wolsong nuclear reactor directly during operation, in spite of the high radiation level. In this paper we will describe the sensor development, measurement techniques, and results of our study. For this study, we used specially developed semiconductor sensors and matching dosimetry techniques for the mixed radiation field. MOSFET dosimeters with a thin oxide, that are tuned to a high dose, were used to measure the ionizing radiation dose. Silicon diode dosimeters with an optimum area to thickness ratio were used for the radiation damage measurements. The sensors are able to distinguish neutrons from gamma/X-rays. To measure the radiation dose, electronic sensor modules were installed on two locations of the fuel handling machine. The measurements were performed throughout one reactor maintenance cycle. The resultant annual cumulative dose of gamma/X-rays on the two spots of the fuel handling machine were 18.47 Mrad and 76.50 Mrad, and those of the neutrons were 17.51 krad and 60.67 krad. The measured radiation level is high enough to degrade certain cable insulation materials that may result in electrical insulation failure.

• Journal of the Korean Operations Research and Management Science Society
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• v.18 no.1
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• pp.119-126
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• 1993

We study a manufacturing process that is quite common in semiconductor wafer fabrication of semiconductor chip production. A machine is used to process a job consisting of J wafers. Each job requires a setup, and the i$_{th}$ setup for a job is sucessful with probability P$_{i}$. The setup is prone to failure, which results in the loss of expensive wafers. Therefore, a tiral run is first conducted on a small batch. If the set up is successful, the test is passed and the balance of the job can be processed. If the setup is unsuccessful, the exposed wafers are lost to scrap and the mask is realigned. The process then repeats on the balance of the job. We call this as send-ahead policy and consider general policies in which the number of wafers that are sent shead depend on the cost of the raw wafer, the sequence of success probabilities, and the balance of the job. We model this process and determine the expected number of good wafers per job,the expected time to process a job, and the long run average throughput. An algorithm to minimize the cost per good wafer subject to a demand constraint is provided.d.d.

• Journal of Information Display
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• v.1 no.1
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• pp.63-69
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• 2000

In order to improve both the level and the stability of electron emission, Mo and Co silicides were formed from Mo mono-layer and Ti/Co bi-layers on single crystal silicon field emitter arrays (FEAs), respectively. Using the slope of Fowler-Nordheim curve and tip radius measured from scanning electron microscopy (SEM), the effective work function of Mo and Co silicide FEAs were calculated to be 3.13 eV and 2.56 eV, respectively. Compared with silicon field emitters, Mo and Co silicide exhibited 10 and 34 times higher maximum emission current, 10 V and 46 V higher device failure voltage, and 6.1 and 4.8 times lower current fluctuation, respectively. Moreover, the emission currents of the silicide FEAs depending on vacuum level were almost the same in the range of $10^{-9}{\sim}10^{-6}$ torr. This result shows that silicide is robust in terms of anode current degradation due to the absorption of air molecules.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.221-225
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• 2014

Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.5
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• pp.163-169
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• 2013

The objective of this study is to replace labor intensive forging processes by an automated system. For achieving it, an exclusive mechanism that consists of a positioner, an arm, and a hanger is configured to handle hot forging objects. Also, a structural analysis is applied to the horizontal motion unit, which is the most highly loaded, in order to verify its validity. In addition, its possibility is also verified through identifying the performance of the proposed system before applying it to sites. As a result, the major characteristic items, such as positioning accuracy, material diameter, object traveling weight, product failure rate, and forging process rate, in this system are perfectly verified for applying it to manufacturing sites.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.61-67
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• 2014

Micro-cracks in crystalline silicon wafer often result in wafer breakage in solar wafer manufacturing, and also their existence may lead to electrical failure in post fabrication inspection. Therefore, the reliable detection of micro-cracks is of importance in the photovoltaic industry. In this paper, an experimental method to select optimal parameters in anisotropic diffusion filter is proposed. It can reliably detect micro-cracks by the distinct extension of boundary as well as noise reduction in near-infrared image patterns of micro-cracks. Its performance is verified by experiments of several type cracks machined.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.15-18
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• 2003

The characteristics of accelerated soft error rate (ASER) for fabricated 8M SRAM are evaluated for various well structures. The application of the Buried NWell (BNW) and the variations of each well structure, well dose in process conditions are checked by ASER failure in time (FIT) in terms of reliability. The application of only the BNW shows the lowest ASER FIT value. The BNW added to the Buried PWell (BPW) shows a 200% increase and the BNW plus the Striped BPW (SBPW) shows a 100% increase compared to applying the BNW. The cases of applying SBPW show very high ASER FIT.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.103-108
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• 2021

The TCD is used as one of the indicators for determining whether TSV Hole is defective. If the TCD is not normal size, it can lead to contamination of the CMP equipment or failure to connect the upper and lower chips. We propose a deep learning model for measuring the TCD. To verify the performance of the proposed model, we compared the prediction results of the proposed model for 2461 via holes with the CD-SEM measurement data and the prediction results of the existing model. Although the number of trainable parameters in the proposed model was about one two-thousandth of the existing model, the results were comparable. The experiment showed that the correlation between CD-SEM and the prediction results of the proposed model measured 98%, the mean absolute difference was 0.051um, the standard deviation of the absolute difference was 0.045um, and the maximum absolute difference was 0.299um on average.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.44-49
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• 2021

Recently, infrared (IR) and near-infrared (NIR) light-emitting diodes (LEDs) were widely used for home medical applications owing to its low output power and wide exposed area for curing. For deep penetration of the light under the skin, multiple LEDs with wavelengths of 700~10,000 nm were located on a flexible printed circuit board. When multiple wavelengths of LEDs were soldered on a circuit board, the lifetime of LED module highly depends on LEDs with a short lifetime. The mean time to failure (MTTF) was able to calculate with the experimental results under high temperature and the Arrhenius model. The results of this study could help companies to approve the warranty of LED modules and its product.