• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• The korean journal of orthodontics
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• v.15 no.2
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• pp.271-277
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• 1985

With modification of the acid etch technique and improvements of the physical and mechanical properties of the acrylic resin, the removal of directly bonded attachments and the finishing of the underlying enamel have become an acute clinical problem. This study was to evaluation the efficacy of recently introduced instrumentation and techniques to remove bonded brackets and residual resin, and restore the affected enamel surface to an acceptable clinical condition. Fortyeight premolar which were scheduled for extraction for orthodontic purposes were bonded with brackets using super-C ortho. Four additional premolars with untreated surfaces were used as controls. After one weak the brackets were removed and the residual resin removed by hand scaler, green stone, green rubber wheel, sandpaper disc, tungsten carbide bur, Sof-lex disc. Half the experimental teeth were given a final pumicing and then all were extracted and stored in 50 percent ethanol. The scanning electron microscopy was used to evaluated the enamel surface. Following results were obtained; 1. A satisfactory result was obtained by means of the Sof-lex disc. 2. The order of the scratch formation was the procedure using hand scaler, green atone, tungsten carbide bur, sandpaper disc, green rubber wheel, and Sof-lex disc. 3. The procedures using green stone and tungsten carbide bur showed many groove formations and the other procedures showed none. 4. final pumicing serves effectively to remove residual adhesive and restore the enamel surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.138-143
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• 2004

CMP (Chemical Mechanical Polishing) technology for global planarization of multilevel interconnection structure has been widely studied for the next generation devices. Among the consumables for CMP process, especially, slurry and their chemical compositions play a very important role in the removal rates and within-wafer non-uniformity (WIWNU) for global planarization ability of CMP process. However, CMP slurries contain abrasive particles exceeding 1 ${\mu}{\textrm}{m}$ size, which can cause micro-scratch on the wafer surface after CMP process. Such a large size particle in these slurries may be caused by particle agglomeration in slurry supply-line. In this work, to investigate the effects of agglomeration on the performance of oxide CMP slurry, we have studied an aging effect of silica slurry as a function of particle size distribution and aging time during one month. We Prepared and compared the self-developed silica slurry by adding of alumina powders. Also, we have investigated the oxide CMP characteristics. As an experimental result, we could be obtained the relatively stable slurry characteristics comparable to aging effect of original silica slurry. Consequently, we can expect the saving of high-cost slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.54-57
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• 2001

We studied the characteristics of polishing pad, which can apply STI-CMP process for global planarization of multilevel interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was defected less than 2 on JRlll pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and devise yield.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.2
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• pp.148-153
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• 2013

This study demonstrates a novel hybrid surface polishing process combining non-traditional electrochemical polishing(ECP) with external artificial ultrasonic vibration. ECP, typical noncontact surface polishing process, has been used to improve surface quality without leaving any mechanical scratch marks formed by previous mechanical processes, which can polish work material by electrochemical dissolution between two electrodes surfaces. This research suggests vibration electrochemical polishing(VECP) assisted by ultrasonic vibration for enhancing electrochemical reaction and surface quality compared to the conventional ECP. The localized roughness of work material is measured by atomic force microscopy(AFM) for detailed information on surface. Besides roughness, overall surface quality, material removal rate(MRR), and productivity etc. are compared with conventional ECP.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.04a
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• pp.50-55
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• 2003

Atomic force microscope(AFM) techniques are increasingly used for tribological studies of engineering surfaces at scales ranging from atomic and molecular to microscale. AFM with suitable tips is being used for nanofabrication nanomachining purposes. In this paper, machining characteristics of silicon have been investigated by nano indentation and nano scratch. Mechanisms of material removal on the microscale are studied and the Taguchi method is introduced to acquire optimum parameters for nanomachining. This work shows effectiveness of the Taguchi method in nanomachining. Also, Acoustic Emission(AE) is introduced for the monitoring of nanomachining.

• Journal of the Semiconductor & Display Technology
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• v.3 no.4
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• pp.45-49
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• 2004

We examined large particles and filter size effects of Central Chemical Supplying (CCS) system for STI-CMP on Light Point Defects (LPDs) after polishing. As manufacturing process recently gets thinner below 0.1 um line width, it is very important to keep down post-CMP micro-scratch and LPDs in case of STI-CMP. Therefore, we must control the size distribution of large particles in a slurry. With optimization of final filter size, CCS system is one of the solutions for this issue. The oxide and nitride CMP tests were accomplished using nano-ceria slurries made by ourselves. The number of large particles in a slurry and the number of LPDs on the wafer surface after CMP were reduced with decrease of the final filter size. Oxide removal rates slightly changed according to the final filter size, showing the good performance of self-made nano ceria slurries.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.270-273
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• 2002

Conditioning은 CMP(Chemical Mechanical Planarization)에 필수적인 공정중의 하나이다. Conditioning의 목적은 removal rate와 uniformity를 CMP 공정 중에서 일정하게 유지시키는데 목적이 있다. 예전의 conditioning disks는 stainless steel substrate 위에 diamond 입자를 올리고 Ni전기도금을 결합시켜서 사용하였다. 그러나, CMP 공정 중에 Ni의분해로 인한 금속의 오염과 diamond abrasive의 분리로 인하여 scratch 문제가 발생하였다. 이 문제를 해결하기 위해서 ceramic substrate와 그것을 정밀 가공하는 기술을 응용함으로써 본래의 conditioning disks가 가지고 있는 diamond 입자의 분리와 metals 분해의 문제를 해결할 수 있게 되었다.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.3
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• pp.163-170
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• 2004

Atomic force microscope (AFM) techniques are increasingly used fur tribological studies of engineering surfaces at scales ranging from atomic and molecular to micro-scale. Recently, AFM with suitable tips is being used for nano fabrication/nano machining purposes. In this paper, machining characteristics of silicon were investigated by nano indentation and nano scratch. Nano-scale material removal mechanisms are studied and the Taguchi method was introduced to acquire optimum parameters for nano machining. Also, Acoustic Emission (AR) is used for the monitoring of nano machining.