• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.870-876
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• 1992

Lead lanthanum zirconate titanate (PLZT, 6/65/35) powders, crack-free and dense thin films have been prepared by polymeric sol-gel process. Pyrolysis of the gel, crystallization and optical transmittance behavior of the PLZT thin film onto sapphire substrate have been studied. Esterification occurs during synthesis of PLZT complexation. Crystalline Pb phase was transiently formed near 450$^{\circ}C$. Content of perovskite phase in the films were increased with increasing thickness of film, but the kinetics of formation of perovskite phase in films was slower than that of powders. Transmittance of the films was decreased with increasing the temperature of heat treatment. Ferroelectric hysteresis loop measurements indicated increments of remanent polarization and coercive field for plenty more of perovskite phase.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.142-146
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• 2007

High-quality one-dimensional GaN nanorods and nanowires were synthesized on Ni-coated c-plan sapphire substrate using halide vapor-phase epitaxy (HVPE). Their structure and optical properties were investigated by X-ray diffraction, scanning and transmission electron microscopy, and photoluminescence techniques. Full substrate coverage of densely packed, uniform, straight and aligned one-dimensional GaN nanowires with a diameter of 80nm were grown at $700{\sim}900^{\circ}C$. The X-ray diffraction patterns, transmission electron microscopic image, and selective area electron diffraction patterns indicate that the one-dimensional GaN nanostructures are a pure single crystalline and preferentially oriented in the [001] direction. We observed high optical quality of GaN nanowires by photoluminescence analysis.

• Progress in Superconductivity and Cryogenics
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• v.6 no.1
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• pp.48-52
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• 2004

Breakdown characteristics of insulator-liquid nitrogen ($LN_2$) composite insulation for resistor type High $T_c$/ superconducting fault current limiter (HTSFCL) under ac and impulse voltage in $LN_2$ has been studied using model electrode systems. Electrodes for model electrode systems were made of SUS 304 contacted fiberglass reinforced plastic (FRP) and Au coated sapphire. The breakdown characteristics of model electrode systems were investigated experimentally for FRP thickness ranging from 1 mm to 5 mm. surface distance ranging from 2.5 mm to 7 mm and electrode gap ranging from 1 to 5 mm. The experimental data suggested that the breakdown voltage of model electrode systems in $LN_2$ is highly dependent on the surface distance, electrode gap as well as on the FRP thickness. Also, we had observed discharge traces and puncture due to high-voltage 60-Hz AC stress.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.62-68
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• 1998

Optical broadband second harmonic genration (SHG) in thin film waveguide structure was investigated. The copolymer poly(MMA-co-DR1MA) which was consiste dof PMMA (polymethylmethacrylate) and DR 1 (disperse red 1) was spin coated on the pyrex substrate. The green and near UV SHG were observe dfrom the fundamental beam even though the poled polymer has the absorption in second harmonic wavelength range. It was able to genrate SHG by cerenkov type phase matching. Th epoled polymer film thickness was decided by theoretical analysis. The green (532nm) and near UV SHG (370nm) were observed from the Q-switched Nd-YAG laser (1064nm) and Ti-sapphire laser (740nm). It was in good agreement with the experimental results.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.24-30
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• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.65-65
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• 2003

청색 발광 LEDs의 개발과 상용화 이후에 백색조명등의 응용 가능성으로 인하여 이에 대한 많은 연구가 최근에 계속되고 있다 하지만 GaN의 많은 광학적인 장점에도 불구하고 이러한 소자의 기판으로 사용되고 있는 sapphire의 열악한 열적 특성은 소자의 열화를 야기할 수 있으며 특히 고출력작동 시에 소자성능 저하의 원인이 될 수 있다. 따라서 이러한 GaN를 기본으로 하는 LED의 경우 이에 대한 정확한 열 측정과 고출력 작동 시의 열적 모델링은 칩과 패키징 단위에서 모두 중요한 연구분야가 되고 있다. 고출력 GaN LED에 대하여 신뢰성에 관한 몇 가지 보고가 있지만, 이러한 보고의 대부분은 패키징 된 램프에 대한 분석이며 정작 칩에 대한 근본적인 열 분석과 신뢰성에 대한 연구결과는 미미한 실정이다 따라서 본 연구에서는 GaN LED 칩에 대하여 직접적인 열 분석을 시도하였다

• Journal of Environmental Science International
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• v.13 no.3
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• pp.319-325
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• 2004

An experimental study on the preparation of monolithic porous polymers by environmentally friend process in supercritical carbon dioxide has been carried out. Polymerization mixture composed of a cross-linking monomer, initiator and functional co-polymer was charged in the reactor with sapphire window. After the system was purged with a flow of $CO_2$ for 15 min, the reactor was pressurized with liquid $CO_2$ up to 100 bars. The reactor was isolated from and placed back to the system via quick connector for shaking until the mixture had become fully homogeneous. The reactor was then heated and pressurized to the required reaction conditions and left overnight. After cooling and $CO_2$ evacuation, the polymer was removed from the reactor as dry, white, continuous monoliths. The effect of experimental conditions on the physical properties of porous polymer was systematically examined, and it was found that monomer content had a major effect on the physical properties of the polymers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.599-602
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• 2008

Growth of well-aligned ZnO nanostructures on various substrates such as GaN, ITO/glass, and sapphire was realized via a simple aqueous solution method at low temperature of $90^{\circ}C$. Morphology of ZnO nanostructures grown on various substrates as function of substrate was studied. It was found that ZnO nanostructures is a strong function of substrate. It was clearly observed that the morphology of ZnO nanostructures could be varied by change of substrate. Morphology, crystallinity, and crystal characteristics were carried out by FE-SEM, synchrotron x-ray scattering measurements, and high-resolution electron microscopy, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.175-179
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• 2017

In this study, we investigate the $SiO_2$ current blocking layer (CBL) to improve light output power efficiency in nonpolar a-plane (11-20) GaN LEDs on a r-plane sapphire substrate. The $SiO_2$ CBL was produced under the p-pad layer using plasma enhanced chemical vapor deposition (PECVD). The results show that nonpolar GaN LED light output power with the $SiO_2$ CBL is considerably enhanced compared without the $SiO_2$ CBL. This can be attributed to reduced light absorption at the p-pad due to current blocking to the active layer by the $SiO_2$ CBL.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1256_1257
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• 2009

We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.