• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.13-20
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• 2000

In this paper, we demonstrated an analytical description method of forward votage drop and reverse leakage current of the junction barrier controlled schottky rectifier with linearly graded junction and abrupt junction models. In this case, the vertical depths of device are 1[${\mu}{\textrm}{m}$] and 2[${\mu}{\textrm}{m}$], respectively. Through ion implantation and annealing process, we obtain the data of lateral and depth from implanted 2-dimensional profiles. Also we applied these data to models that indicate the change of depletion each on linearly-graded and abrupt juction as the forward and revers bias. After applied depletion changes to electric characteristics of JBS rectifiers, we calculated the forward I-V, the reverse leakage current and temperatures vs. power dissipations according to each junction. When we compared the rectifier with calculated and measured data, from the calculated results, forward votage drop with linearly graded junction is lower than that of abrupt junction and reverse leakage current with linearly graded junction is lower(≒1$\times$10\ulcorner times) than that of abrupt junction. Also, the power dissipations according to different juction depth(1[${\mu}{\textrm}{m}$], 2[${\mu}{\textrm}{m}$]) of device are calculated. Seeing the calculated results, we confirmed it from analytic model that the rectifier with linearly graded junction retained a low power dissipation up to 600[$^{\circ}C$] in comparison with the rectifier with abrupt junction.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• Membrane Journal
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• v.26 no.5
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• pp.351-364
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• 2016

In recent decades, many researchers have tried to improve desalination performances of polyamide (PA) thin-film composite membranes (TFCs) by incorporating nanomaterials into a selective PA layer. This review focuses on PA-based nanocomposite membranes with high performances for energy-effective desalination in reverse osmosis. Carbon based nanomaterial (e.g., graphene oxide (GO), carbon nanotubes (CNT)) and/or other nanoparticles (e.g., zeolite, silica and etc.,) were applied to overcome the trade-off correlation between water permeability and salt rejection of current polymeric desalination membranes. Here, this brief review will discuss current studies of PA-based nanocomposite membranes with enhanced separation characteristics and provide the future research direction to achieve further improved desalination performances.

• Journal of the Korean Electrochemical Society
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• v.16 no.3
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• pp.145-150
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• 2013

In this study, the electrochemical investigation of various electrodes for reverse electrodialysis using potassium ferrocyanide and potassium ferricyanide as a redox system was carried out. Cyclic voltammetry was the employed method for this electrochemical study. From the results of cyclic voltammograms for various electrode materials, i.e., Au, Vulcan supported Pt, activated carbon, carbon nanofiber, Vulcan, the Vulcan electrode showed the lowest overpotential, but the Pt electrode having slightly higher overpotential obtained slightly higher anodic and cathodic current densities for the $Fe(CN)_6{^{4-}}/Fe(CN)_6{^{3-}}$ redox couple. The cyclic voltammograms for the Vulcan electrode confirmed very good electrochemical reversibility and kinetic behavior. As a result, among the electrode materials, the Vulcan electrode is the most promising electrode material for reverse electrodialysis.

• Journal of the Korean Solar Energy Society
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• v.39 no.6
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• pp.15-25
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• 2019

As the installation of photovoltaic systems increases, fire accidents of PV system grow every year. Most of PV system fires have been reported to be caused by electrical components. The majority of fire accidents occurred in combiner box, which is presumed to be short-circuit accidents due to dustproof and waterproof failures or heat deterioration of blocking diode. For this reason, the blocking diode installation became optional by revised PV combiner regulation. In this paper, according to the revised regulation, reverse current that generated by voltage mismatch was measured and analyzed in PV array without a blocking diode. The factors that cause voltage mismatch in array are assumed to be shaded PV module and short circuit failure of bypass diode. As the result of experiment, there is no reverse current to flow under shading condition in module, but reverse current flows on the failure of bypass diode in module. According to the module's I-V characteristic curve analysis, open voltage was slightly reduced due to operation of bypass diode in shading. However, it showed that open circuit voltage has decreased significantly in the failure of bypass diode. This indicates that the difference in open voltage reduction of voltage mismatch factor causes reverse current to flow.

• Clinics in Shoulder and Elbow
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• v.14 no.1
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• pp.125-133
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• 2011

Purpose: The purpose of the present article is to help orthopedic surgeons better understand the function and performance of reverse total shoulder arthroplasty, and also to help them perform the most proper surgical technique for reconstruction. Materials and methods: In this article, the specific technical aspects and pitfalls of reverse total shoulder arthroplasty were reviewed in depth. Additionally, the current issues relevant to the reverse total shoulder arthroplasty such as scapular notching and restoration of active external rotation were discussed. Results and conclusion: An understanding of the biomechanics of reverse total shoulder arthroplasty and the technical details and pitfalls of its implantation are critical in order to provide the best functional outcome without increasing the risk of complications.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.229-237
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• 2005

The degradation phenomena in SiGe hetero-junction bipolar transistors(SiGe HBTs) induced by bias stress are investigated in this review. If SiGe HBTs are stressed over a specific time interval, the device parameters deviate from their nominal values due to the internal changes in the devices. Reverse-bias stress on emitter-base(EB) junctions causes base current increase and current gain decrease because carriers accelerated by the electrical field generate recombination centers. When forward-bias current stress is conducted at an ambient temperature above $140^{\circ}C$ , hot carriers produced by Auger recombination or avalanche multiplication induce current gain fluctuation. Mixed-mode stressing, where high emitter current and high collector-base voltage are simultaneously applied to the device, provokes base current rise as EB reverse-bias stressing does.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.3
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• pp.220-226
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• 2014

Input current ripple and harmonic components of the power device are main causes of electromagnetic interference (EMI). Although the discontinuous conduction mode (DCM) operation can reduce harmonic components of the power device by reducing reverse recovery current of diode and turn-off voltage spikes of the switch, input current ripple increases due to high peak to peak inductor current. Therefore, in this paper, frequency control algorithm is proposed to reduce the input current ripple of DCM operated interleaved boost converter. In the proposed algorithm, duty ratio is fixed either 0.33 or 0.67 to minimize the input current ripple and the switching frequency is controlled according to operating conditions. 600 W 3-phase interleaved boost converter prototype system is built to verify proposed algorithm.

• Journal of Power Electronics
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• v.1 no.2
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• pp.71-77
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• 2001

This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of DC to DC PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of DC to DB PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5 kW prototype converter operating at 40 kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.