• Korean Journal of Materials Research
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• v.29 no.5
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• pp.317-321
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• 2019

We investigated the characteristics of nano crystalline silicon(nc-Si) thin-film solar cells on graphite substrates. Amorphous silicon(a-Si) thin-film solar cells on graphite plates show low conversion efficiency due to high surface roughness, and many recombination by dangling bonds. In previous studies, we deposited barrier films by plasma enhanced chemical vapor deposition(PECVD) on graphite plate to reduce surface roughness and achieved ~7.8 % cell efficiency. In this study, we fabricated nc-Si thin film solar cell on graphite in order to increase the efficiency of solar cells. We achieved 8.45 % efficiency on graphite plate and applied this to nc-Si on graphite sheet for flexible solar cell applications. The characterization of the cell is performed with external quantum efficiency(EQE) and current density-voltage measurements(J-V). As a result, we obtain ~8.42 % cell efficiency in a flexible solar cell fabricated on a graphite sheet, which performance is similar to that of cells fabricated on graphite plates.

• Journal of Sensor Science and Technology
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• v.31 no.1
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• pp.31-35
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• 2022

The efficacy improvement of the light emitting diode (LED) was studied for the realization of small-size, low power consumption, and highly sensitive bio-sensor instrument. The performance of the LED with Mg delta-doping at the interface of AlGaN/GaN super-lattice in p type cladding layer was simulated. The device with Mg delta-doping showed improved current, radiative recombination rate, electroluminescence, and light output power compared to the conventional LED structure. Under the bias condition of 5 V, the improved device exhibited 20.8% increase in the light output power. This is attributed to the increment of hole concentration from stable ionization of Mg in p type cladding layer. This result is expected to be used for the miniaturization, power saving, and sensitivity improvement of the bio-sensor system.

• Journal of the Korean institute of surface engineering
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• v.56 no.4
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• pp.265-272
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• 2023

Photoelectrochemical (PEC) water splitting is one of the promising methods for hydrogen production by solar energy. Iron oxide has been effectively investigated as a photoelectrode material for PEC water splitting due to its intrinsic property such as short minority carrier diffusion length. However, iron oxide has a low PEC efficiency owing to a high recombination rate between photoexcited electrons and holes. In this study, we synthesized nanoporous structured iron oxide by anodization to overcome the drawbacks and to increase surface area. The anodized iron oxide was annealed in Ar atmosphere with different purging times. In conclusion, the highest current density of 0.032 mA/cm² at 1.23 V vs. RHE was obtained with 60 s of pursing for iron oxide(Fe-60), which was 3 times higher in photocurrent density compared to iron oxide annealed with 600 s of pursing(Fe-600). The resistances and donor densities were also evaluated for all the anodized iron oxide by electrochemical impedance spectra and Mott-Schottky plot analysis.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3229-3240
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• 2023

Due to neutron radiation, atomic displacement has a significant effect on material in nuclear reactors. A range of secondary displacement models, including the Kinchin-Pease (K-P), Lindhard, Norgett-Robinson-Torrens (NRT), and athermal recombination-corrected displacement per atom (arc-dpa) have been suggested to calculate the number of displacement per atom (dpa). As neutron elastic interaction is the main cause of displacement damage, the focus of the current study is to calculate the atomic displacement caused by the neutron elastic interaction in order to estimate the exact amount of yield strength in a WWER-1000 reactor pressure vessel. To achieve this purpose, the reactor core is simulated by MCNPX code. In addition, a program is developed to calculate the elastic radiation damage induced by the incident neutron flux (RADIX) based on different models using Fortran programming language. Also, due to non-elastic interaction, the displacement damage is calculated by the HEATR module of the NJOY code. ASME E-693-01 standard, SPECTER, NJOY codes, and other pervious findings have been used to validate RADIX results. The results showed that the RADIX(arc-dpa)/HEATR outputs have appropriate accuracy. The relative error of the calculated dpa resulting from RADIX(arc-dpa)/HEATR is about 8% and 46% less than NJOY code, respectively in the ¼ and ¾ vessel wall.

• Korean Journal of Optics and Photonics
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• v.23 no.2
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• pp.64-70
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• 2012

We analyzed the changes in electrical and optical characteristics of 1 $mm^2$ multiple-quantum-well (MQW) blue LEDs grown on a c-plane sapphire substrate after a stress test. Experiments were performed by injecting 50 mA current for 200 hours to TO-CAN packaged sample chips. We selected the value of injection current for stress through the junction-temperature measurement by using the forward-voltage characteristics of a diode to maintain a sufficiently low junction temperature during the test. The junction temperature at the selected injection current of 50 mA was 308 K. Experiments were performed under the assumption that the average junction temperature of 308 K did not affect the characteristics of the ohmic contact and the GaN-based materials. Before and after the stress test, we measured and analyzed current-voltage, light-current, light distribution on the LED surface, wavelength spectrum and relative external quantum efficiency (EQE). After the stress test, it was observed experimentally that the optical power and the relative EQE decreased. We theoretically investigated and experimentally proved that these phenomena are due to the increased nonradiative recombination rate caused by the increased defect density.

• Current Photovoltaic Research
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• v.7 no.4
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• pp.125-129
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• 2019

Recently, carrier-selective contact solar cells have attracted much interests because of its high efficiency with low recombination current density. In this study, we investigated the effect of phosphorus doped amorphous silicon layer's characteristics on the passivation properties of tunnel oxide passivated carrier-selective contact solar cells. We fabricated symmetric structure sample with poly-Si/SiOx/c-Si by deposition of phosphorus doped amorphous silicon layer on the silicon oxide with subsequent annealing and hydrogenation process. We varied deposition temperature, deposition thickness, and annealing conditions, and blistering, lifetime and passivation quality was evaluated. The result showed that blistering can be controlled by deposition temperature, and passivation quality can be improved by controlling annealing conditions. Finally, we achieved blistering-free electron carrier-selective contact with 730mV of i-Voc, and cell-like structure consisted of front boron emitter and rear passivated contact showed 682mV i-Voc.

• Journal of the Korean Applied Science and Technology
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• v.17 no.2
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• pp.120-125
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• 2000

The tfTZ(4,4',4''-trifluoro-triazine) was used as a hole blocking material for the electroluminescent devices(ELDs) in this study. In general, the holes are outnumbered the electrons in hole transport and emitting layers because the hole transport is more efficient in most organic ELDs. The hole blocking layer are expected to control the excess holes to increase the recombination of holes and electrons and to decrease current density. The former study using the 2,4,6-triphenyl-1,3,5-triazine(TTA) as hole blocking layer showed that the TTA did not form stable films with vapor deposition technique. The tfTZ can generate stable evaporated films, moreover the fluorine group can lower the highest occupied molecular orbital(HOMO) level, which produces the energy barrier for the holes. The tfTZ has high electron affinities according to the data by the Cyclic-Voltammety(CV) method, which is developed for the measurement of HOMO and lowest occupied molecular orbital(LUMO) level of organic thin films. The lowered HOMO level is made the tfTZ to be applied for a hole blocking layer in ELDs. We fabricated multilayer ELDs with a structure of ITO/hole blocking layer(HBL)/hole transporting layer(HTL)/emitting layer/electrode. The hole blocking properties of this devices is confirmed from the lowered current density values compared with that without hole blocking layer.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.62-70
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• 1984

N+NPP+ HLEBSF (high low emitter back surface field) solar cells which have N+N high low junction in the emitter as well as N+PP+ BSF cells were designed and fabricated by using <111> oriented P type Si wafers with the resistivity of 10$\Omega$/$\textrm{cm}^2$ and the thickness of 13-15 mil. Physical parameters (impurity concentration, thickness) at each region of N+PP+ and N+NPP+ cell were made equally through same masks and simultaneous process except N region of HLEBSF cell to investigate the high low emitter junction effect for efficiency improvement. Under the light intensity of 100 mW/$\textrm{cm}^2$, total area (active area) conversion efficiency were typically 10.94% (12.16%) for N+PP+ BSF cells and 12.07% (13.41%) for N+N PP+ cells. Efficiency improvement of N+NPP+ cell which has high low emitter Junction structure is resulted from the suppression of emitter recombination current and the increasement of open circuit voltage (Voc) and short circuit current (Ish) by removing heavy doping effects occurring in N+ emitter region.

• Journal of Electrochemical Science and Technology
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• v.2 no.4
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• pp.187-192
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• 2011

Photoelectrochemical performances of ZnO electrodes are enhanced by coupling with cobalt-based catalyst (CoPi) in phosphate electrolyte (pH 7). For this study, hexagonal pillar-shaped ZnO nanorods are grown on ZnO electrodes through a chemical bath deposition, onto which CoPi is deposited with different photodeposition times (10-30 min). A scanning electron microscopic study indicates that CoPi deposition does not induce any change of ZnO morphology and an energy-dispersive X-ray spectroscopic analysis shows that inorganic phosphate ions (Pi) exist on ZnO surface. Bare ZnO electrodes generate the current of ca. $0.36mA/cm^2$ at a bias potential of 0.5 V vs. SCE, whereas ZnO/CoPi (deposited for 10 min) has ca. 50%-enhanced current ($0.54mW/cm^2$) under irradiation of AM 1.5G-light ($400mW/cm^2$). The excess loading of CoPi on ZnO results in decrease of photocurrents as compared to bare ZnO likely due to limited electrolyte access to ZnO and/or CoPi-mediated recombination of photogenerated charge carriers. The primary role of CoPi is speculated to trap the photogenerated holes and thereby oxidize water into molecular oxygen via an intervalency cycle among Co(II), Co(III), and Co(IV).

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.545-552
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• 2003

When a Si PIN diode is exposed to fast neutrons, it results in displacement damage to the Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed. Several PIN diode arrays with various thickness and cross-section area of the intrinsic layer(I layer) were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have a good linearity to neutron dose and show that the increase of thickness of I layer and the decrease of cross-section of PIN diodes improve the sensitivity. Newly developed PIN diodes with thicker I layer and various cross section, were retested and then showed the best neutron sensitivity at the condition that the I layer thickness was similar to a side length. On the basis of two test results, final discrete PIN diodes with a rectangular shape were manufactured and the characteristics as neutron detectors were analyzed through the neutron beam test using on-line electronic dosimetry system. Developed PIN diode shows a good linearity as dosimetry in the range of 0 to 1,000cGy(Tissue) and its neutron sensitivity is 13mV/cGy at constant current of 5mA, that is three times higher than that of commercially available neutron detectors. And the device shows little dependency on the orientation of the neutron beam and a considerable stability in annealing test for a long period.