• Title/Summary/Keyword: reactive ion beam

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Development and Characterization of High Temperature Superconducting Wire for Superconducting Cable System (초전도 케이블용 고온초전도 선재의 개발 및 특성평가)

  • Mean, Byoungjean;Lee, Jae-Hun;Kim, Young-Soon;Lee, Hunju;Moon, Seung-Hyun
    • KEPCO Journal on Electric Power and Energy
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    • v.1 no.1
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    • pp.151-156
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    • 2015
  • In order to improve the properties of high-temperature superconducting wire for superconducting cable system, we optimized the electro-polishing (EP), ion-beam assisted deposition (IBAD), superconducting (SC) layer, and baking (heat) treatment. The buffer layer was deposited on electro-polished substrate with RMS roughness ($R_{RMS}$) less than 5 nm. The IBAD process was carried out at $V_{beam}$: 1100 V and $V_{accel}$: 850 V that resulted in highly crystalline film of $LaMnO_3$. Chemical composition of SC layer is key to higher critical current, and we found that composition can be determined by surface color of SC layer. We adopt a proprietary contorl system based on RGB analysis of the surface and achieved critical current of 150 A/4 mm-width. The proposed baking treatment resulted in decreasing of about 10% of fraction defects.

Boron-doped Diamond Thin Film for Electrochemical Biosensors

  • Jianzhong-Zhu;Lu-Deren
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.156-158
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    • 1998
  • This paper describes the preparation of boron-doped polycrystalline diamond thin film whose electrical resitivity is lower than $10^{-1}\Omega$cm. The 1$\times$1$\textrm{mm}^2$ microelectrodes, its conducting line with 0.2mm wide and 0.5$\times$0.5$\textrm{mm}^2$ pads was patterned by reactive ion beam etching. A glucose microsensor based on diamond film microelectrode and pyramidal containment produced on silicon by anisotropic etching was developed. Its advantages are high sensitivity and high stability.

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A novel in-situ vacuu encapsulted lateral field emitter triode (자체적으로 진공을 갖는 수평형 전계 방출 트라이오드)

  • 임무섭;박철민;한민구;최연익
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.12
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    • pp.65-71
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    • 1996
  • A novel lateral field emitter triode has been designed and fabricated. It has self-vacuum environmets and low turn-on voltage, so that the chief problems of previous field emission devices such as additional vacuum sealing process and high turn-on voltage are settled. An in-situ vaccum encapsulation empolying recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seals are implemented to fabricate the new field emitter triode. The device exhibits low turn-on voltage of 7V, stabel current density of 2.mu.A/tip at V$_{AC}$ = 30V, and high transconductance (g$_{m}$) of 1.7$\mu$S at V$_{AC}$ = 22V. The superb device characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

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A New Miniaturized Electron-Beam deflector for Microcolumn (Microcolumn 을 위한 새로운 개념의 초소형 전자빔 deflector)

  • Han, Chang-Ho;Kim, Hak;Chun, Kuk-Jin
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.1037-1040
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    • 2003
  • 본 논문에서는 microcolumn 을 위한 초소형 전자빔 deflector 의 제작방법과 microcolumn array 에서 deflector 의 외부 패드를 최소화 할 수 있는 새로운 배선방법을 기술하였다. 배선의 통로 및 절연체 역할을 하는 Pyrex glass 의 양쪽에 각각 실리콘 웨이퍼의 양극접합 및 deep reactive ion etching(DRIE)과 금속 전기 도금을 이용하여 다층배선을 하였다. 이 배선방법을 이용하면 microcolumn array 가 수백개가 되더라도 deflector 의 외부 패드는 항상 8개를 유지할 수 있다.

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Fabrication of a wavelength division multiplexer based on the polymeric arrayed-waveguide grating (폴리머 광도파로열을 이용한 파장 분할 다중화기의 제작)

  • 오태원;이원영;신상영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.11
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    • pp.70-75
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    • 1997
  • a wavelength division multiplexer based on a polymeric arrayed-waveguide grating has been designed and fabricated. A 4-channel multiplexer with a spacing of 3.2 nm is designe dby using te 2-dimensional beam propagation method. A UV-curable epoxy, NOA73, is used for the core layer, and a passive polymer, PMMA, for the cladding layer. The polymer waveguides are fabricated by the reactive ion etching method and their optical properties are characterized. The fabricted device has a center wavelength of 1548.3 nm, and the wavelength spacing between the channels is 3.2nm. The measured crosstalk is better than -18dB.

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Effect of Bias Voltage on the Micro Discharge Characteristics of MgO Film prepared by Unbalanced Magnetron Sputtering

  • Kim, Young-Kee;Park, Jung-Tea;Park, Cha-Soo;Cho, Jung-Soo;Park, Chung-Hoo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.101-102
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    • 2000
  • The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the de bias voltage of -10V showed lower discharge voltage, lower erosion rate by ion bombardment, higher optic transparency and higher crack resistance in annealing process than those samples prepared by conventional magnetron sputtering or E-beam evaporation.

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Alignment property change in DLC alignment layer containing various hydrogen concentration

  • Kim, Jong-Bok;Kim, Kyung-Chan;Ahn, Han-Jin;Hwang, Byung-Har;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.378-380
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    • 2005
  • Diamond like carbon (DLC) films are known that they show homogeneous alignment property when they are irradiated by Ar ion beam. The DLC films in most of studies were deposited by CVD and contain large mount of hydrogen. In order to identity the hydrogen effect on alignment property, DLC films is deposited by RF magnetron sputter using various ratio of Ar and H2 as reactive gas. DLC films are characterized by FT-IR, Raman and contact angle. Alignment property is estimated by measuring pretilt angle.

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Development of Micro-opto-mechanical Accelerometer using Optical fiber (광섬유를 이용한 미세 광 기계식 가속도 센서의 개발)

  • Lee, Seung-Jae
    • Journal of the Korean Society of Mechanical Technology
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    • v.13 no.4
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    • pp.93-99
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    • 2011
  • This paper presents a new type of optical silicon accelerometer using deep reactive ion etching (DRIE) and micro-stereolithography technology. Optical silicon accelerometer is based on a mass suspended by four vertical beams. A vertical shutter at the end of the mass can only moves along the sensing axis in the optical path between two single-mode optical fibers. The shutter modulates intensity of light from a laser diode reaching a photo detector. With the DRIE technique for (100) silicon, it is possible to etch a vertical shutter and beam. This ensures low sensitivity to accelerations that are not along the sensing axis. The microstructure for sensor packaging and optical fiber fixing was fabricated using micro stereolithography technology. Designed sensors are two types and each resonant frequency is about 15 kHz and 5 kHz.

Enhanced Cathodoluminescence of KOH-treated InGaN/GaN LEDs with Deep Nano-Hole Arrays

  • Doan, Manh-Ha;Lee, Jaejin
    • Journal of the Optical Society of Korea
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    • v.18 no.3
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    • pp.283-287
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    • 2014
  • Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.

Characteristics of Polarization and Birefringence for Submicron a-Ge Thin Film on Quartz Substrate Formed by Focused-Ion-Beam (석영 기판 위에 집속 이온빔 기술에 의해 형성된 비정질 게르마늄 박막 미세 패턴의 편광 및 복굴절 특성)

  • Shin, Kyung;Ki, Jin-Woo;Park, Chung-Il;Lee, Hyun-Yong;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.617-620
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    • 1999
  • In this study, the polarization e(fecal and the birefringence effect of amorphous germanium (a-Ge) thin films were investigated by using linearly polarized He-Ne laser beam. The a-7e thin films were deposited on the quarts substrate by plasma enhanced chemical vapor deposition (PECVD) and thermal vacuum evaporation In order to obtain the optimum grating arrays, inorganci resists such as Si$_3$N$_4$ and a-Se$_{75}$ Ge$_{25}$ , were prepared with the optimized thickness by Monte Carlo (MC) simulation. As the results of MC simulation, the thickness ofa-Se$_{75}$ Ge$_{25}$ resist was determined with Z$_{min}$ of 360$\AA$ . The resists were exposed to Ga$^{+}$-FIB with accelerating energies of 50 keV, developed by wet etching, and a-Ge thin film was etched by reactive ion-etching (RIE). Finally, we were obtained grating arrays which grating width and linewidth are 0.8${\mu}{\textrm}{m}$, respectively and we studied the polarization and birefringence effect in transmission grating array made of high refractive amorphous material, and the applicability as waveplates and polarizers in optical device.e.e.

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