• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.682-684
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• 2004

The effect of 1/f noise by the random telegraph signal(RTS) on the phase noise and the jitter of CMOS ring Oscillator is investigated. 10 parallel piece-wise-linear current sources connected to each node model the RTS signals. The In, the power spectral density and the jitter of output of the ring oscillator are simulated as functions of the amplitude and time constant of RTS current source. It is confirmed that the increase of amplitude of RTS is directly related to the increase of the width of phase noise md the value of jitter. The shorter the time constant is, the wider width of FET peak and the larger value of cycle to cycle jitter are.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.606-609
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• 2003

It is known that 1/f noise of MOSFET is generated by superposition of single Random Telelgraph Signal (RTS). In this study, jitter from 1/f noise of MOSFET is analysed with RTS supplied to one of the nodes of the ring oscillator under investigation. Jitter rates are investigated as the number of stage, power supply voltage, and the amplitude of RTS change.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.8
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• pp.1713-1718
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• 2004

It has been known that 1/f noise of MOSFET is generated by the superposition of single random telelgraph signals (RTS). In this study, jitters caused by 1/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of the variations of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of FFT of the outputs of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.250-250
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• 2010

The random telegraph signal (RTS) for the NOR flash cell scaling is investigated. An innovative method to suppress the RTS, based on the device engineering, is proposed. By optimizing the channel doping profile and using the high-k tunnel dielectric, it is confirmed from three-dimensional (3-D) simulation, that the $V_{th}$ amplitude, dueto RTS, is significantly suppressed, from approximately 0.5 to 0.07 V in the middle of the channel at 45 nm NOR Flash technology. From this result, it is expected that the proposed method to suppress the RTS amplitude is essential for further cell size scaling in Flash memory.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.42-46
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• 2005

It has been known that 1/f noise of MOSFET is generated by superposition of random telelgraph signals (RTS). In this study, jitters and phase noise caused by 1/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of FFT of the output of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.252-259
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• 2017

In this paper, we propose a novel method for extracting an accurate depth of a trap that causes RTS(Random Telegraph Signal) noise. The error rates of the trap depth rely on the mean time constants and its ratio. Here, we determined how many data of the capture and emission time constant are necessary in order to reduce the trap depth error caused by an inaccurate mean time constant. We measured the capture and emission time constants up to 100,000 times in order to ensure that the samples had statistical meaning. As a result, we demonstrated that at least 1,000 samples are necessary to satisfy less than 10% error for trap depth. This result could be used to improve the accuracy of RTS noise analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.20-23
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• 2012

In this paper, we investigated the device performance on fluorine implantation, hot carrier reliability and RTS (random telegraph signal) noise characteristics of NMOSFETs. The capacitance of the fluorine implanted NMOSFET decreased due to the increase of the gate oxide thickness. RTS noise characteristics of the fluorine implated NMOSFET was improved approximately by 46% due to the decrease of trap density at Si/$SiO_2$ interface. The improved gate oxide quality also results in the longer hot carrier life time.