Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of Device Characteristics of NMOSFETs on Fluorine Implantation

Fluorine 주입에 따른 NMOSFET의 소자 특성 연구

  • 권성규 (충남대학교 전자전파정보통신공학과) ;
  • 권혁민 (충남대학교 전자전파정보통신공학과) ;
  • 이환희 (충남대학교 전자전파정보통신공학과) ;
  • 장재형 (충남대학교 전자전파정보통신공학과) ;
  • 곽호영 (충남대학교 전자전파정보통신공학과) ;
  • 고성용 ;
  • 이원묵 ;
  • 이성재 (충남대학교 전자전파정보통신공학과) ;
  • 이희덕 (충남대학교 전자전파정보통신공학과)
  • Received : 2011.11.04
  • Accepted : 2011.12.24
  • Published : 2012.01.01
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Abstract

In this paper, we investigated the device performance on fluorine implantation, hot carrier reliability and RTS (random telegraph signal) noise characteristics of NMOSFETs. The capacitance of the fluorine implanted NMOSFET decreased due to the increase of the gate oxide thickness. RTS noise characteristics of the fluorine implated NMOSFET was improved approximately by 46% due to the decrease of trap density at Si/$SiO_2$ interface. The improved gate oxide quality also results in the longer hot carrier life time.

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References

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