• 천문학회보
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• 제44권1호
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• pp.46.3-46.3
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• 2019

We present our observational and theoretical investigation of Raman-scattered features in symbiotic stars (SySts). SySts are long interacting binaries, consisting of a hot compact star and an evolved giant, whose interaction via accretion process is at the origin of a tangled network of gas and dust nebulae. These systems are ideal objects to study a variety of important astrophysical problems, and have also been proposed as possible progenitors of type Ia supernova. In this talk, we emphasize that Raman-scattered features are exclusive spectroscopic tools to probe the stellar wind accretion processes in SySts. We studied mass transfer and mass loss processes in SySts using high resolution spectra obtained with 1.8m telescope at Mt. Bohyun and the 6.5m Magellan-Clay telescope combining with the theoretical modeling of radiative transfer of Raman-scattered features. We also note that there are a much smaller number of SySts known in our Galaxy, implying the necessity of systematic search programs. In view of the fact that Raman O VI features at $6830{\AA}$ are found in only bona fide SySts, we will carry out a photometric search of objects with Raman O VI features using a narrow band filter centered at $6830{\AA}$ in Local group galaxies.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.223-228
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• 1997

The gas dynamics in a stagnation point upflow OMVPE reactor were studied by Raman spectroscopy. The gas temperature was measured as a function of inlet gas velocity and aspect ratio for both H$_2$ and N$_2$ carrier gases. The centerline temperature gradient was latger at higher inlet velocities and with the use of N$_2$, and only weakly dependent on the aspect ratio. a tracer molecule, CH$_4$, was used to investigate the steady state behavior of reactants in the reactor, and the use of a sweeping flow was found to be a suitable method for preventing wall deposition. The transient switching response of the gas manifold was also investigated. Under certain conditions (low velocities, unmatched flows) recirculation flows were apparent. Numerical calculations of the reactor gas dynamics gave reasonable agreement with experimental results when detailed thermal boundary conditions were included.

• Bulletin of the Korean Chemical Society
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• 제32권5호
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• pp.1579-1582
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• 2011

Alumina particles wrapped in few-layer graphene sheets were prepared by calcining aluminum nitride powders under a mixed gas flow of carbon monoxide and argon. The graphene sheets were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, electron energy loss spectroscopy, and high-resolution transmission electron microscopy. The few-layer graphene sheets, which wrapped around the alumina particles, did not exhibit any diffraction peaks in the XRD patterns but did show three characteristic bands (D, G, and 2D bands) in the Raman spectra. The dye-sensitized solar cell (DSSC) with the alumina particles wrapped in few-layer graphene sheets exhibited significantly improved overall energy-conversion efficiency, compared to conventional DSSC, due to longer electron lifetime.

• 전자공학회논문지T
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• 제36T권3호
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• pp.13-18
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• 1999

다이아몬드 박막은 RF PACVD법에 의해 수소와 메탄으로부터 실리콘 웨이퍼 상에 성장되어졌다. 박막 성장 전에 표면의 핵생성 밀도를 증가시키기 위하여 1㎛의 다이아몬드 페이스트로 기계적 흡집을 내어 사용하였다. 메탄 농도를 변화시켜 제작한 박막에 대한 평가는 XRD, SEM 및 Raman Spectroscopy에 의해 이루어졌다. 성장된 박막의 결정성은 메탄 농도가 낮을수록 증가되었다.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.320-323
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• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• Bulletin of the Korean Chemical Society
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• 제30권9호
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• pp.2071-2076
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• 2009

The single-walled carbon nanotubes (SWCNTs) produced by chemical vapor deposition (CVD) were directly fluorinated with fluorine ($F_2$) gas in a temperature range 20 ~ 400 ${^{\circ}C}$. The surface properties and morphology of the SWCNTs were investigated in terms of fluorination temperature. As a result, Raman spectra showed a pair of bands at 1340 and 1590 $cm^{-1}$ peculiar to disordered $sp^2$-carbons. These results indicated that C-F bonds were formed on the rear surfaces of the nanotubes by fluorination, while the external surfaces as well as the layers between the internal and external surfaces retained their $sp^2$-hybridization. XPS analysis exhibited that fluorine atoms were bonded to carbon atoms on internal surfaces (rear surfaces) of the nanotubes and the amount of fluorine attached on the nanotubes was increased with increasing the fluorination temperature. Consequently, the direct fluorination of carbon nanotubes led to functionalization and modification of pristine nanotubes with respect to surface and morphological properties.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.930-934
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• 2006

This paper reports a change of carbon nanotubes(CNTs) properties by post-treatment process after growth of CNTs. CNTs were treated by thermal method and solution method, and then investigated in detail using field emission scanning electron microscopy(FE-SEM), high resolution transmission scanning electron microscopy(HR-TEM), RAMAN spectroscopy, and Fourier Transform Infrared Spectrometer (FT-IR). FT-IR spectra showed that the amount of hydroxyl generated on surface of CNTs were changed with post-treatment condition. FE-SEM and TEM images were shown CNTs diameter and density variations were dependent with their treatment conditions. RAMAN spectroscopy was shown that carbon nanotubes structure vary with treatment conditions.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1095-1099
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• 2009

As a substitute material for silicon, we synthesized few layer graphene (FLG) by CVD process with a 300-nm-thick nickel film deposited on the silicon substrate and found out the lowest temperature for graphene synthesis. Raman spectroscopy study showed that the D peak (wave length : ${\sim}1,350\;cm^{-1}$) of graphene was minimized and then the 2D one (wave length : ${sim}2,700\;cm^{-1}$) appeared when rapid thermal anneal is carried out with the $C_2H_2$ treated nickel film. This study demonstrates that a high quality FLG formed at a low temperature of $400^{\circ}C$ is applicable as CMOS devices and transparent electrode materials.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2000년도 제21회 KOSCO SYMPOSIUM 논문집
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• pp.160-167
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• 2000

We investigated a uniform temperature zone, produced by double flame structure of a coflow CH4/air partially premixed flame, to be used as a temperature calibration source for laser diagnostics. A broadband N2 CARS(coherent anti-Stokes Raman spectroscopy) system with a modeless laser was used for temperature measurement. When the stoichiometric ratio was 1.5, we found the uniform temperature zone in radial direction of the flame of which the averaged temperature was 2110 K with standard deviation 24 K. In the stoichiometric ratio range between 2.0 and 2.5, we found very stable temperature-varying zones in vertical direction at the center of the flame. The size of the zone was approximately 15 mm and it covered a temperature range from 300 K to 1900 K. We also suggest that this zone can be used as a calibration source for 2-D PLIF(planar laser induced flurescence) temperature measurement.

• 조명전기설비학회논문지
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• 제28권3호
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• pp.57-62
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• 2014

In this work, molybdenum oxide films were fabricated by heat-treatment method. Fundamental surface characteristics of molybdenum oxide films were investigated using XRD and Raman spectroscopy. From the results, the optimum MoOx films could be obtained under the conditions of thermal treatment temperature of $550^{\circ}C$, oxidation time of 30 minutes and oxygen flow rate of 250sccm. The thermal treatment method offers a simple and effective route for the synthesis of uniform $MoO_3$ films.