• 제목/요약/키워드: proton irradiation

검색결과 134건 처리시간 0.03초

양성자가 주입된 NPT형 전력용 다이오드의 전류-전압 특성 (Current-voltage Characteristics of Proton Irradiated NPT Type Pourer Diode)

  • 김병길;백종무;이재성;배영호
    • 한국전기전자재료학회논문지
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    • 제19권1호
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    • pp.7-12
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    • 2006
  • Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

이온빔을 이용한 미생물의 균주 개량 (Strain Improvement Based on Ion Beam-Induced Mutagenesis)

  • 정해영;김계령
    • 한국미생물·생명공학회지
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    • 제38권3호
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    • pp.235-243
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    • 2010
  • For decades, traditional mutation breeding technologies using spontaneous mutation, chemicals, or conventional radiation sources have contributed greatly to the improvement of crops and microorganisms of agricultural and industrial importance. However, new mutagens that can generate more diverse mutation spectra with minimal damage to the original organism are always in need. In this regard, ion beam irradiation, including proton-, helium-, and heavier-charged particle irradiation, is considered to be superior to traditional radiation mutagenesis. In particular, it has been suggested that ion beams predominantly produce strand breaks that often lead to mutations, which is not a situation frequently observed in mutagenesis induced by gamma-ray exposure. In this review, we briefly describe the general principles and history of particle accelerators, and then introduce their successful application in ion beam technology for the improvement of crops and microbes. In particular, a 100-MeV proton beam accelerator currently under construction by the Proton Engineering Frontier Project (PEFP) is discussed. The PEFP accelerator will hopefully prompt the utilization of ion beam technology for strain improvement, as well as for use in nuclear physics, medical science, biology, space technology, radiation technology and basic sciences.

상용 단일모드 광섬유의 양성자 영향 (Proton induced Effects on Commercial Single-mode Optical Fibers)

  • 김종열;김영웅;류국빈;황영관;이민웅;송근영
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2022년도 추계학술대회
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    • pp.623-625
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    • 2022
  • 본 논문에서는 양성자 가속기를 이용하여 5종류의 상용 단일모드 광섬유에 대해서 양성자 조사에 따른 전송손실 특성평가를 수행하였다. 조사 시험에 사용된 양성자 빔은 100 MeV 급의 고에너지를 가지며, 빔 조사면적에 대한 균일도는 10% 이하로 설정하여 시험을 수행하였다. 양성자 조사에 따라서 광섬유 종류(내부 소재, 불순물)의 영향에 따라서 방사선 유입에 의한 광 손실 특성은 큰 차이를 보였다.

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양성자 조사된 폴리아크릴로니트릴 필름의 광학적 특성 (Optical Properties of Proton-irradiated Polyacrylonitrile Film)

  • 이화수;백가영;정진묵;황인태;정찬희;신준화;최재학
    • 방사선산업학회지
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    • 제10권1호
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    • pp.1-5
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    • 2016
  • In this study, the effect of high-energy proton irradiation on the optical properties of polyacrylonitrile (PAN) films was investigated. PAN thin films spin-coated on a substrate were irradiated 150 keV proton ions at various fluences. The changes in the chemical structure and optical properties were investigated by FT-IR and UV-vis spectroscopy. The results of the FT-IR analysis revealed that the cyclization reaction took place by proton irradiation and the degree of cyclization increased with an increasing fluence. Based on the UV-vis analysis, the optical band gap of PAN decreased from 2.84 to 2.52 eV with an increasing fluence due to the formation of carbon clusters by proton irradiation. In addition, the number of carbon atoms per carbon cluster and the number of carbon atoms per conjugation length were found to be increased with an increasing fluence.

System-on-chip single event effect hardening design and validation using proton irradiation

  • Weitao Yang;Yang Li;Gang Guo;Chaohui He;Longsheng Wu
    • Nuclear Engineering and Technology
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    • 제55권3호
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    • pp.1015-1020
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    • 2023
  • A multi-layer design is applied to mitigate single event effect (SEE) in a 28 nm System-on-Chip (SoC). It depends on asymmetric multiprocessing (AMP), redundancy and system watchdog. Irradiation tests utilized 70 and 90 MeV proton beams to examine its performance through comparative analysis. Via examining SEEs in on-chip memory (OCM), compared with the trial without applying the multi-layer design, the test results demonstrate that the adopted multi-layer design can effectively mitigate SEEs in the SoC.

Verification of Periodical Calibration for Iso-center Positions using Quality Assurance System for Irradiation Equipment Position Established at PMRC

  • Yasuoka, Kiyoshi;Ishikawa, Satoko
    • 한국의학물리학회:학술대회논문집
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    • 한국의학물리학회 2002년도 Proceedings
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    • pp.192-194
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    • 2002
  • We present the results on the calibration of iso-center positions using the quality assurance system established at PMRC for determination of center position in X-ray and proton irradiation fields. Details on the system are presented in another presentation in this session. The equipment in the system is mounted on a patient treatment bed in each proton exposure room, G1 or G2. A center of a stainless ball on the equipment is set at a cross of laser markers located around the iso-center and fixed on the room and on the snout in the gantry. A proton beam or an X-ray beam is exposed onto the ball through a brass collimator of 100 mm ${\times}$ 100 mm and projected onto the imaging plate set at I cm behind the ball. On the axis perpendicular to the thrust axis of the gantry on the imaging plate, a distance between a center of the collimator image and a center of the ball image varies as a cosine function of gantry angles unless the ball is set on the iso-center. An amplitude of the cosine curve shows the distance between the ball and the iso-center, an offset the offset of the collimator, and a phase shift at a zero crossing point the ball direction viewed from the iso-center. We present the relation among the iso-center position, the laser maker position, and the center of proton and X-ray irradiation fields. Its stability and its reproducibility are discussed.

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앙성자 및 감마선을 처리한 유채 $M_2$ 세대의 소포자로부터 반수체 배발생 (Production of Haploids from Proton Ion and Gamma-Ray Irradiation Treated $M_2$ Generation of Isolated Microspores in Brassica napus L. ssp. oleifera)

  • 김광수;이미양;장영석;박윤정;방진기
    • 한국작물학회지
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    • 제53권2호
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    • pp.150-155
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    • 2008
  • 양성자와 감마선 조사한 추파형 유채 $M_2$세대의 화뢰의 소포자 배발생에 대해 조사하였다. 세 가지 유채품종 '한라', '내한'과 '탐미' 유채종자를 각각 400 Gy와 600 Gy의 양성자와 감마선으로 전처리 하였다. 일부 종의 양성자와 감마선 조사구에서 배발생이 증가되었고 대조구보다 높았다. 품종별로는 '내한'유채가 배발생 빈도가 가장 높았고 '탐미' 유채가 가장 낮았다. 드물게 배상체로부터 바로 소식물체가 형성되었고 대부분은 비정상적으로 multilobe가 형성되었다. 배상체로부터 식물체가 성공적으로 재분화 되었고 화분에 순화되었다.

양전자 소멸 수명 측정에 의한 양성자 조사된 BaSrFBr : Eu 박막 특성 (Positron Annihilation Lifetime Study on the Proton-Irradiation BaSrFBr : Eu Film)

  • 임유석;이종용
    • 한국재료학회지
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    • 제20권6호
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    • pp.307-311
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    • 2010
  • Positron annihilation lifetime spectroscopy is applied to BaSrFBr : Eu film which is used for the phosphore layer, and afterwards the reliability and self-consistency of source corrections in the positron lifetime spectroscopy is investigated using a $^{22}Na$ positron emitter covered by thin foils. The positron lifetime showed no significant change through the various proton irradiation energies. It is unusual that the measurements of the defects indicate that most of the defects were likely to have been generated by X-ray radiation. This may have resulted from the Bragg peaks of the proton characteristics. The Bragg peak does not affect the defect signals enough to distinguish the lifetimes and intensities in a material that is includes multi-grains. The lifetime ($\tau_1$) associated with positron annihilations in the Ba, Br, and Eu of the sample was about 250 ps, and due to the annihilations at F-centers or defects from the irradiated protons in sample, the lifetime ($\tau_2$) was about 500 ps.