Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Current-voltage Characteristics of Proton Irradiated NPT Type Pourer Diode

양성자가 주입된 NPT형 전력용 다이오드의 전류-전압 특성

  • 김병길 (위덕대학교 정보통신공학부) ;
  • 백종무 (대원과학대학 전자정보통신과) ;
  • 이재성 (위덕대학교 정보통신공학부) ;
  • 배영호 (위덕대학교 정보통신공학부)
  • Published : 2006.01.01
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Abstract

Local minority carrier lifetime control by means of particle irradiation is an useful technology for Production of modern silicon Power devices. Crystal damage due to ion irradiation can be easily localized by choosing appropriate irradiation energy and minority tarrier lifetime can be reduced locally only in the damaged layer. In this work, proton irradiation technology was used for improving the switching characteristics of a un diode. The irradiation was carried out with various energy and dose condition. The device was characterized by current-voltage, capacitance-voltage, and reverse recovery time measurements. Forward voltage drop was increased to 1.1 V at forward current of 5 A, which was $120\%$ of its original device. Reverse leakage current was 64 nA at reverse voltage of 100 V, and reverse breakdown voltage was 670 V which was the same voltage as original device without irradiation. The reverse recovery time of device was reduced to about $20\%$ compared to that of original device without irradiation.

Keywords

References

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