• Korean Journal of Materials Research
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• v.12 no.7
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• pp.573-579
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• 2002

Stoichiometric mullite ($3Al_2$$O_3$. $2SiO_2$) precursor sol has been prepared by sol-gel method. The effects of the precursor pH and sintering temperature on the synthesizing behavior and morphology of mullite have been studied. Mullite precursor sol was prepared by dissolution of aluminum nitrate enneahydrate (Al($NO_3$)$_3$.9H$_2O) into the mixture of silica sol. Precursor pH of the sols was controlled to acidic condition ($PH\leq$ 1~1.5) and to basic condition ($pH\geq$8.5~9). The synthesized aluminosilicate sols were formed under 20 MPa pressure after drying at $150^{\circ}C$ for 24 hours, and then sintered for 3hours in the temperature range of $1100~1600^{\circ}C$. From TGA/DTA analysis, total weight loss in the aluminosilicate gel of the acidic sample was (equation omitted) 56% and that of the basic sample was (equation omitted) 85%, indicating that the synthesizing temperature of mullite phase for acidic and basic samples was above $1200^{\circ}C$ and $1300^{\circ}C$, respectively. The morphologies of the synthesized mullite were fine and needle-like (or rod-like) for acidic sample, and granular for basic sample that has been sintered above $1300^{\circ}C$. It was found that the morphology of mullite particle was predominantly governed by precursor pH and sintering temperature.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3383-3386
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• 2012

SnS thin films were deposited on glasses through metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions, using bis(3-mercapto-1-propanethiolato) tin(II) precursor without toxic $H_2S$ gas. The MOCVD process was carried out in the temperature range of $300-400^{\circ}C$ and the average grain size in fabricated SnS films was about 500 nm. The optical band gap of the SnS film was about 1.3 eV which is in optimal range for harvesting solar radiation energy. The precursor and SnS films were characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, DIP-EI mass spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.129-133
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• 1994

$ZnO_{x}$ films were deposited by conventional thermal evaporation method. Zinc acetate was used as precursor. XRD and SEM results shows films as mixed stats of ZnO and zinc acetate. And EDX measurements reseal composition of films as $ZnO_{x}$.

• Journal of the Korean Vacuum Society
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• v.19 no.6
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• pp.483-488
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• 2010

ZnO nano-fibrous thin films with various precursor concentrations ranging from 0.2 to 1.0 mol (M) were grown by spin-coating method and effects of the precursor concentration on surface and optical properties of the ZnO nano-ribrous thin films were investigated by using scanning electron microscopy (SEM) and photoluminescence (PL). ZnO nuclei were formed at the precursor concentration below 0.4 M and the ZnO nano-fibrous thin films were grown at the precursor concentration above 0.6 M. Further increase in the precursor concentration, the thickness of the ZnO nano-fibrous thin films is gradually increased. The intensity and the full-width at half-maximum (FWHM) of the near-band-edge emission (NBE) is increased as the precursor concentration is increased. The deep-level emission (DLE) is red-shifted as the precursor concentration is increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1092-1098
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• 2006

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the $Pb(Zr_xTi_{1-x})O_3$ (PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by3 sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The composition of powder and precursor solution were PZT(70/30) and PZT(30/70), respectively. The PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The XRD patterns of all PZT thick films shelved typical perovskite polycrystalline structure. The porosity of the thick films was decreased with increasing the number of coatings and 6-time coated films with 1.5 M showed the dense microstructure and thickness of about $60{\mu}m$. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 1.5 M, 6-time coated showed the 698. The remanent polarization the 1.5 M and 6-time coated PZT thick films was $38.3{\mu}C/cm^2$.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2177-2180
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• 2012

New [$^{18}F$]F-fluorination methods using a minimized amount of precursor has been developed by controlling the base concentration. In the first method, pre-conditioning of the anion exchange cartridge with $K_2CO_3$ solution or water was carried out. The trapped [$^{18}F$]fluoride on the cartridge was then eluted by KOMs or KOTf solution. [$^{18}F$]F-Fluorination could be performed without additional base. In the second method, the QMA cartridge was preconditioned with KOMs solutions. Trapped [$^{18}F$]fluoride on the QMA was then eluted with KOMs and additional base, such as KOH, $K_2CO_3$, and $KHCO_3$, was added into the reaction vessel. Method 1 showed a [$^{18}F$]F-incorporation yield of 20.9% for [$^{18}F$]FLT synthesis with 5 mg of precursor. Unlike method 1, a [$^{18}F$]F-incorporation yield of 91.4% was achieved from the same amount of precursor in method 2.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.34.1-34.1
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• 2000

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.236.2-236.2
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• 2015

The copper-zinc(Cu-Zn) nanofiber was prepared by electrospinning method. The Cu/PVP (polyvinylpyrrolidone) and Zn/PVP precursor solutions were prepared by dissolution of copper sulfate and zinc acetate in methanol, respectively. The PVP was used to control the viscosity of the precursor solutions. The optimized ratio for the Cu/PVP and Zn/PVP nanofibers was determined separately. Then the suitable ratio of the precursor solutions was applied for fabrication of Cu/Zn/PVP nanofiber. For the electrospinning method, the precursor solutions were filled in a syringe. The distance between metallic needle on the syringe and collector was fixed at 16 cm and the voltage was applied on the tip was 13.0 kV. And the as-spun nanofiber was heated at 353K for removal of residual solvent. Then the heated nanofibers were calcined at 973K to decompose PVP. The obtained Cu, Zn, and Cu-Zn nanofibers were investigated with X-ray photoelectron spectroscopy (XPS) for the chemical properties, scanning electron microscopy (SEM) for the morphologies, and X-ray diffraction (XRD) to characterize the crystallinity and phase of nanofibers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.222-227
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• 2010

ZnO nanorods array have been grown on the seed crystal coated Si(100) substrate by hydrothermal method. The growth, structural and optical properties of ZnO nanorods array were investigated with a variation of precursor concentration from 0.01 M to 0.04 M. The array density of grown ZnO nanorods per same area was increased with increasing the concentration of precursor solution. Vertically aligned ZnO nanorods with hexagonal wurtzite structure have highly preferred c-axis orientation along (002) lattice plane. Especially, ZnO nanorods array developed from 0.04 M precursor solution showed a diameter of about 85 nm and length of 1.2 {\mu}m$ without any crystallographic defects. The photoluminescence spectra of ZnO nanorods from heavier precursor concentration exhibited stronger UV emission around 380 nm corresponding with near-band-edge emission.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1014-1019
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• 2006

The influence of the number of solution coatings on the densification of the PZT thick films was studied. PZT powder and PZT precursor solution was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The powder and solution of composition were (A) PZT(80/20)/PZT(20/80), (B) PZT(70/30)/PZT(30/70) and (C) PZT(60/40)/PZT(40/60), (D) PZT(52/48)/PT. The coating and drying procedure was repeated 4 times. And then the PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 moth and the number of coating was repeated from 0 to 6. The porosity of the thick films was decreased with increasing the number of coatings and the PZT thick films with 6-times coated showed the dense microstructure and thickness of about $60{\mu}m$. A grain size was increased with increasing the coating number. All PZT thick films showed the typical XRD patterns of a typical perovskite polycrystalline structure. The relative dielectric constant of PZT thick films was improved 30-100% as the number of coatings.