Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Influence of Precursor Solution Coating Parameters on Ferroelectric Properties of Pb(Zr0.7Ti0.3)O3 Thick Films

Pb(Zr0.7Ti0.3)O3 후막의 강유전 특성에 전구체 용액의 코팅요소가 미치는 영향

  • 박상만 (경상대학교 공학연구원 세라믹공학과, i-cube 사업단) ;
  • 윤상은 (경상대학교 공학연구원 세라믹공학과, i-cube 사업단) ;
  • 이성갑 (경상대학교 공학연구원 세라믹공학과, i-cube 사업단)
  • Published : 2006.12.01
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Abstract

The influence of the concentration of precursor solution and the number of solution coatings on the densification of the $Pb(Zr_xTi_{1-x})O_3$ (PZT) thick films was studied. PZT powder and PZT precursor solution were prepared by3 sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The composition of powder and precursor solution were PZT(70/30) and PZT(30/70), respectively. The PZT precursor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5 to 2.0 mol/L[M] and the number of coating was repeated from 0 to 6. The XRD patterns of all PZT thick films shelved typical perovskite polycrystalline structure. The porosity of the thick films was decreased with increasing the number of coatings and 6-time coated films with 1.5 M showed the dense microstructure and thickness of about $60{\mu}m$. The relative dielectric constant of the PZT thick film was increased with increasing the number of solution coatings and the thick films with 1.5 M, 6-time coated showed the 698. The remanent polarization the 1.5 M and 6-time coated PZT thick films was $38.3{\mu}C/cm^2$.

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References

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