• Journal of Powder Materials
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• v.20 no.1
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• pp.37-42
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• 2013

$YAG:Ce^{3+}$ phosphor powders were synthesized using a $Al_2O_3$ seed (average particle size: 5 ${\mu}m$) by the polymer solution route. PVA solution was added to the sol precursors consisting of the seed powder and metal nitrate salts for homogeneous mixing in atomic scale. All dried precursor gels were calcined at $500^{\circ}C$ and then heated at $1400^{\circ}C{\sim}1500^{\circ}C$ in $N_2/H_2$ atmosphere. The final powders were characterized by using XRD, SEM, PSA, PL and PKG test. All synthesized powders were crystallized to YAG phase without intermediate phases of YAM or YAP. The phosphor properties and morphologies of the synthesized powders were strongly dependent on the PVA content. Finally, the synthesized $YAG:Ce^{3+}$ phosphor powder heated at $1500^{\circ}C$, which is prepared from 12:1 PVA content and has an average particle size of 15 ${\mu}m$, showed similar phosphor properties to a commercial phosphor powder.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.196.2-196
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• 2003

• Journal of Powder Materials
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• v.12 no.4 s.51
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• pp.249-254
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• 2005

Titanium dioxide was prepared by Polymer Complex Solution Method(PCSM) according to the mole ratio of Titanium (IV) isopropoxide(TTIP)/solvent and polymer(Poly Ethylene Glycol). Polymer electrolytes were usually made by dispersing preproduced ceramic nanoparticles in a polymer matrix. Using this method, pure and nano-sized $TiO_2$ powder was synthesized through a simple procedure and polymer entrapment route. At the optimum amount of the polymer, the titanium ions are dispersed in solution and a homogeneous polymeric network is formed. The maximum intensity of anatase phase of $TiO_2$ was achieved by calcining at $500^{\circ}C$ for 2h. The synthesized $TiO_2$ powders were nano-sized and the average size was about 50nm. Anatase/Rutile ratio of the synthesized $TiO_2$ was 70%/30%.

• Korean Journal of Materials Research
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• v.28 no.1
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• pp.12-17
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• 2018

$In_2O_3$ doped $WO_3$ powders were prepared by a polymer solution route and their $NO_2$ gas sensing properties were analyzed. The synthesized powders showed nano-sized particles with specific surface areas of $6.01{\sim}21.5m^2/g$ and the particle size and shape changed according to the content of $In_2O_3$. The gas sensors fabricated with the synthesized powders were tested at operating temperatures of $400{\sim}500^{\circ}C$ and 100~500 ppm concentrations of $NO_2$ atmosphere. The particle size and $In_2O_3$ content affected on the initial sensor resistance in an air atmosphere. The highest sensitivity (8.57 at $500^{\circ}C$), which was 1.77 higher than the sensor consisting of the pure $WO_3$ sample, was measured in the 0.5 mol% $In_2O_3$ doping sample. In addition, the response time and recovery time were improved by the addition of $In_2O_3$.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.151-157
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• 2004

Because of the excellent thermal and chemical properties of mullite and cordierite as the stable oxide ceramic materials, they were widely used from engineering materials to electronic materials. Notwithstanding of their high demands, mullite was synthesised because it is not existed in nature. It is also difficult to produce cordierite of fine powder with high purity due to the narrow range of synthetic temperature. Mullite was synthesised by solid state reaction. However, synthesized mullite has been inhomogeneous. Because of the facts, various synthetic methods have been studied so far including sol-gel method. The purpose of this study is to synthesis mullite and cordierite of fine powder with high purity at the lower temperature by solution-polymerization route using PVA as a polymer carrier, which is an economical method by using low cost materials. As a result, mullite and cordierite were produced with mono crystal phase at 1200$^{\circ}C$ and 1250$^{\circ}C$, respectively, and their surface area over 20 ㎡/g.

• Current Applied Physics
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• v.18 no.11
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• pp.1300-1305
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• 2018

The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.116.1-116
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• 2003

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.54-60
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• 2010

Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride $Ti_{1-x}Al_xN$, ternary nitrides tetragonal $SrTiN_2$, $BaZrN_2$, and $BaHfN_2$, hexagonal $FeMoN_2$, and nanocomposite TiN-$BaZrN_2$.

• Journal of the Korean Ceramic Society
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• v.51 no.5
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• pp.424-429
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• 2014

YAG:$Ce^{3+}$ phosphor powders were synthesized using $Al(OH)_3$ seeds by means of a PVA-polymer-solution route. Various types of PVA with different molecular weights (different polymerization) were used. All dried precursor gels were calcined at $500^{\circ}C$ and then heated at $1500^{\circ}C$ in a mix of nitrogen and hydrogen gases. The final powders were characterized via XRD, SEM, PSA, PL, and PKG analyses. The phosphor properties and morphologies of the synthesized powders were dependent on the PVA type. As the molecular weight of the PVA was increased, the particle size gradually decreased with agglomeration, and the luminous intensity of the phosphor increased. However, the phosphor powder prepared from the PVA exhibiting very high molecular weight, showed a 531 nm (blue) shift from the 541 nm (yellow) wavelength of the YAG:$Ce^{3+}$ phosphor. Finally, the synthesized YAG:$Ce^{3+}$ phosphor powder prepared from the PVA with 89,000 - 98,000 molecular weight showed phosphor properties similar to those of a commercial phosphor powder, but without a post-treatment process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.26.1-26.1
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• 2009

A simple route of external mechanical force is presented for enhancing the electrical properties of polymer nanocomposite consisted of nanowires. By dispersing ZnO nanowires in polymer solution and drop casting on substrates, nanocomposite transistors containing ZnO nanowires are successfully fabricated. Even though the ZnO nanowires density is properly controlled for device fabrication, as-cast device doesn't show any detectable currents, because nanowires are separated far from each other with the insulating polymer matrix intervening between them. Compared to the device pressed at 300 kPa, the device pressed at 600 kPa currents increased by 50times showing the linear behavior against drain voltage and exhibits promising electrical properties, which operates in the depletion mode with higher mobility and on-current. Such an improved device performance would be realized by the contacts improvement and the increase of the number of electrical path induced by external force. This approach provides a viable solution for serious contact resistance problem of nanocomposite materials and promises for future manufacturing of high-performance devices.