• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.245-251
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• 2017

Niobium doped zirconium oxide (Nb-Zr-O:NZO) thin films were fabricated on Si substrates by a sol-gel technique with an annealing temperatures of $500{\sim}1000^{\circ}C$ in air ($N_2:O_2=3:1$) for 20 minutes. It was found that the NZO film is based on tetragonal $ZrO_2$ polycrystalline structure with the Nb 5+ ion state and there is almost no diffusion of Nb or Zr to Si substrate. The relative dielectric constant for the NZO film with the Nb composition of 30 mol% and annealed at $800^{\circ}C$ was around 40. The root mean roughness was 1.02 nm. In addition, the leakage current of NZO films was as low as $10^{-6}A/cm^2$ at 4.4 V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.78-81
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• 2002

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.184-187
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• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1414-1415
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• 2011

높은 게이트와 드레인 바이어스 스트레스 조건에서 신뢰성을 높이기 위해 비대칭 스페이싱 다중채널 구조 (ASS) 를 이용한 다결정 실리콘 박막 트래지스터 (poly-Si TFTs) 를 제안하였다. 이것은 어떠한 추가공정 없이 제작할 수 있고 채널 가운데 부분의 넓은 공간을 이용하여 소자안의 유도된 열을 방출할 수 있기 때문에 기존의 트랜지스터에 비해 47%의 문턱전압감소와 3%의 이동도 변화 감소를 보인다. 이 실험결과는 제안된 소자구조가 기존의 소자에 비해 높은 게이트와 드레인 바이어스 조건에서 전기적 특성이 더 안정적이라는 것을 보여준다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.252-252
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1750-1755
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• 2006

Nonoptimal placement of short-channel-length TFTs in large-grained polycrystalline Si films with a periodic microstructure, as for instance obtained via 2-shot SLS, can potentially lead to degradation in the overall uniformity of the resultant devices. In this paper, we explain and demonstrate that by simply introducing a well-defined misorientation between the devices and the periodic microstructure, it is possible to significantly reduce (and potentially entirely eliminate) the device nonuniformity problem that can arise from such a cause.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• 한국세라믹학회지
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• 제14권3호
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• pp.182-186
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• 1977

Compression creep of polycrystalline magnesia at about 1$600^{\circ}C$ under 5-40kg/$\textrm{cm}^2$ was examined, and also the effects on it of minor additives such as B2O3, CaO and SiO2 were examined. The high temperature creep of high purity magnesia was primarily controlled by the Nabarro-Herring type lattice diffusion of Mg in magnesia. B2O3 was included in the molten state and showed on increasing B2O3 contents. Some of the CaO and SiO2 were also included in the molten state, promoted the grain boundary sliding, so that creep rate was increased with an increasing content of them.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1113-1116
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• 2003

This review article gives a comprehensive compilation of recent developments in low temperature deposited poly Si flms, also known as microcrystalline silicon. The development of various ion energy suppression techniques for plasma enhanced chemical vapour deposition and ionless depositions such as HWCVD and expanding thermal plasma, and their effect on the material and solar cell efficiencies are described. A correlation between ef.ciency and the two most important process parameters, i.e., growth rate and process temperature is carried out. Finally, the application of these poly Si cells in multijunction cell structures and the best efficiencies worldwide by various deposition techniques are discussed.

• 대한전자공학회논문지
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• 제21권6호
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• pp.51-55
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• 1984

다결정 반도체의 전도모델로써 grain boundary와 표면에서 일어나는 band-bending을 가정하였다. 이 가정에 경계면에서 일어나는 트랩핑을 고려한 새로운 박막 트랜지스터의 전도이론을 제시하였다. S1O2를 절연체로 사용한 CdSe 박막 트랜지스터를 제조하고 그 특성을 측정하였다. 이때 CdSe는열 증착하였으며 SiO2는 고주파 스펏터링 하였다. 이론으로 구한 박막 트랜지스터의 출력곡선과 측정에 의한 실험치를 비교 및 검토하였다.