Nucleation of CVD Diamond on Various Substrate Materials

  • Fukunaga, O. (Department of Inorganic Materials, Tokyo Institute of Technology Ookyama) ;
  • Qiao, Xin (Department of Inorganic Materials, Tokyo Institute of Technology Ookayama) ;
  • Ma, Yuefei (Department of Inorganic Materials, Tokyo Institute of Technology Ookayama) ;
  • Shinoda, N. (Ogura Jewel Industry) ;
  • Yui, K. (Ogura Jewel Industry Co. Lt.) ;
  • Hirai, H. (Materials and Structures Laboratory, Tokyo Instutute of Technology) ;
  • Tsurumi, T. (Department of Inorganic Materials, Tokyo Institute of Technology Ookayama) ;
  • Ohashi, N. (Department of Inorganic Materials, Tokyo Institute of Technology Ookayama)
  • Published : 1996.12.01

Abstract

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

Keywords

References

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