• ETRI Journal
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• 제31권6호
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• pp.636-641
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• 2009

ZnO nanofibers were electro-spun from a solution containing poly 4-vinyl phenol and Zn acetate dihydrate. The calcination process of the ZnO/PVP composite nanofibers brought forth a random network of polycrystalline wurtzite ZnO nanofibers of 30 nm to 70 nm in diameter. The electrical properties of the ZnO nanofibers were governed by the grain boundaries. To investigate possible applications of the ZnO nanofibers, their CO and $NO_2$ gas sensing responses are demonstrated. In particular, the $SnO_2$-deposited ZnO nanofibers exhibit a remarkable gas sensing response to $NO_2$ gas as low as 400 ppb. Oxide nanofibers emerge as a new proposition for oxide-based gas sensors.

• Journal of the Korean Wood Science and Technology
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• 제51권1호
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• pp.14-22
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• 2023

Economical use of larix (larch) boards (grade 3) in industries is lower than that of imported hardwood; thus, studies have been conducted toward performance improvement of larix boards. Herein, flexural modulus of larix board samples laminated with wood adhesives polyurethane resins, poly (vinyl acetate) resins, phenol-resorcinol-formaldehyde resins, melamine-formaldehyde resins, and urea-formaldehyde resins was compared with that of the samples bonded with adhesives reinforced with mesh-type basalt fibers. Moreover, the flexural moduli of the laminated samples bonded by mesh-type basalt fibers were compared with those of reinforced samples. The results showed that boards laminated with polyurethane and urea-formaldehyde resin adhesives had higher flexural modulus than those without the lamination. In particular, the increase in the flexural modulus was relatively significant for the 2- and 3-ply board structures laminated with polyurethane adhesives compared to those with reinforcement. The 3-ply board structure without reinforcement had the highest flexural modulus when the urea-formaldehyde resin adhesive was used.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1140-1143
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFTs) for liquid crystal display that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (S/D) electrodes, gate dielectric layer, and gate electrode, respectively The $NiO_x$ S/D electrodes of which the work function is well matched to that of P3HT are deposited on a P3HT channel by electron-beam evaporation of NiO powder. The maximum saturation current of our P3HT-based TFT is about $15{\mu}A$ at a gate bias of -30 V showing a high field effect mobility of $0.079cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^5$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• 마이크로전자및패키징학회지
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• 제13권1호통권38호
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• pp.37-42
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• 2006

유기 박막트랜지스터(OTFTs)제작에서 PVP-게이트 절연막의 형성과 처리가 소자성능에 미치는 영향을 조사하였다. 유기 게이트 용액의 제조에서는 polyvinyl 계열의 PVP(poly-4-vinylphenol)를 용질로, PGMEA (propylene glycol monomethyl ether acetate)를 용매로 사용하였다. 또한 열경화성 수지인 poly(melamine-co-formaldehyde)를 경화제로 사용하여 유기 절연막의 cross-link를 시도하였다. MIM 시료의 전기적 절연 특성을 측정한 결과, PVP-기반 유기 절연막은 용액의 제조에서 PGMEA에 대한 PVP와 poly (melamine-co-formaldehyde)의 농도를 증가시킬수록 낮은 누설전류 특성을 나타내었다. OTFT 제작에서는 PGMEA에 대해 PVP를 20 wt%로 섞은 PVP(20 wt%) copolymer와 5 wt%와 10 wt%의 poly(melamine-co-formaldehyde)를 경화제로 추가한 cross-linked PVP(20 wt%)를 게이트 유전 재료로 사용하였다. 제작된 트랜지스터들에서 전계효과 이동도는 5 wt % cross-linked PVP(20 wt%) 소자에서 $0.31cm^2/Vs$로, 그리고 전류 점멸비는 10 wt% cross-linked PVP(20 wt%) 소자에서 $1.92{\times}10^5$으로 가장 높게 나타났다.

• Bulletin of the Korean Chemical Society
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• 제27권9호
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• pp.1439-1444
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• 2006

A $Cu^{2+}$ ion-selective membrane microelectrode has been fabricated from poly vinyl chloride (PVC) matrix membrane containing a new symmetrical hexadentate Schiff,s base 2-{1-(E)-2-((Z)-2-{(E)-2-[(Z)-1-(2-hydroxyphenyl)ethylidene]hydrazono}-1-methylpropylidene)hydrazono]ethyl}phenol (HDNOS) as a neutral carrier, Potassium tetrakis(4-chlorophenyl) borate (KTpClPB) as an anionic excluder and o-nitrophenyloctyl ether (NPOE) as a plasticizing solvent mediator. The microelectrode displays linear potential response in the concentration range of $1.0\;{\times}\;10^{-5}-1.0\;{\times}\;10^{-11}$ M of $Cu^{2+}$. The microelectrode exhibits a nice Nernstian slope of 25.9 ${\pm}$ 0.3 mV $decade^{-1}$ in the pH range of 3.1-8.1. The sensor has a relatively short response time in whole concentration ranges ($\sim$5 s). The detection limit of proposed sensor is $5.0\;{\times}\;10^{-12}$ M (320 pg/L), and it can be used over a period of eight weeks. The practical utility of the sensor has been demonstrated by using it as an indicator electrode in the potentiometric titration of $Cu^{2+}$ with EDTA. The proposed membrane electrode was used for the direct determining of $Cu^{2+}$ content in black and red pepper, and in waste water samples.

• Journal of the Korean Wood Science and Technology
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• 제31권2호
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• pp.84-91
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• 2003

본 연구에서는 3 수종(이태리 포플러, 소나무, 굴참나무재)을 공차별(0, 0.15, 0.3, 0.45 mm)로 초산비닐 수지와 레소시놀-페놀 공축합 수지를 이용하여 접합 제작하였다. 휨시험에서 핑거공차에 따라서 검출되는 AE와 휨강도성능 특성을 살펴본 결과는 다음과 같았다. 레소시놀재의 AE파 발생시기가 초산재보다 빨랐으며, 레소시놀재의 AE파 사상총수는 하중의 증가와 함께 계속적으로 증가하였으며 총발생 사상총수도 초산재보다 휠씬 많이 나타났다. 또한, 레소시놀재의 AE파 사상총수는 낮은 하중에서도 많은 개수가 발생하였다. 비례한도 내에서도 레소시놀 접착제를 사용한 경우에는 많은 AE파가 검출되었다. 따라서 레소시놀 접착제로 접착한 핑거 접합재의 휨시험으로부터 얻은 AE 신호는 핑거공차에 따른 접합재의 강도 예측이나 보증에 이용 가능할 것으로 판단되었다.

• 한국진공학회지
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• 제13권3호
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• pp.99-102
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• 2004

유기 절연층을 사용한 유기 박막 트랜지스터의 특성 향상을 위해 절연층 표면에 Ar플라즈마 처리를 하였다. 플라즈마 처리는 절연체 표면의 화학적, 물리적 특성 변화를 통해 그 후에 이어지는 활성층 성막시 분자들의 결정성을 향상시키기 위한 방법이다. 활성층으로 사용된 물질은 pentacene이며, 절연층으로 사용된 물질은 PVP(poly-vinyl-phenol)이다. Pentacene는 약 $10^{-6}$ Torr에서 0.5 $\AA$/sec의 속도로, PVP는 spin coating법에 의해 각각 성막되었다. 형성된 절연층을 일정 시간동안 H플라즈마 처리 한 후 각 소자의 전기적 특성을 측정하여 표면처리에 의한 특성 변화를 살펴보았다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.395-395
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• 2007

We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (SID) electrodes, gate dielectric, and gate electrode, respectively. The $NiO_x$ SID electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacenechannel by sputter deposited of NiO powder and show a moderately low but still effective transmittance of ~65% in the visible range along with a good sheet resistance of ${\sim}40{\Omega}/{\square}$. The maximum saturation current of our soluble pentacene-based TFT is about $15{\mu}A$ at a gate bias of -40showing a high field effect mobility of $0.06cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^4$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.

• 한국재료학회지
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• 제16권5호
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• pp.302-307
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• 2006

The formation and processing of organic insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). The series of polyvinyls, poly-4-vinyl phenol(PVP) and polyvinyltoluene (PVT), were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series: PVP(10 wt%) copolymer, 5 wt% cross-linked PVP(10 wt%), PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current characteristics. Finally, inverted staggered OTFTs using the PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%) as gate insulators were fabricated on the polyether sulphone (PES) substrates. In our experiments, we could obtain the maximum field effect mobility of 0.31 $cm^2/Vs$ in the device from 5 wt% cross-linked PVP(20 wt%) and the highest on/off current ratio of $1.92{\times}10^5$ in the device from 10 wt% cross-linked PVP(20 wt%).

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.39-43
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• 2006

The polyvinyl series organic films as gate insulators of thin film transistor(TFT) have been processed and characterized on the polyether sulphone (PES) substrates . The poly-4-vinyl phenol(PVP) and polyvinyl toluene (PVT) were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series; copolymer PVP(10 wt%), 5wt% cross-linked PVP(10 wt%), copolymer PVP(20 wt%), 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current of 1.2 pA at ${\pm}10V$. The ms value of surface roughness and the capcitance per unit area are 2.41 and $1.76nF/cm^2$ in the case of 10 wt% cross-linked PVP(20 wt%) layer, respectively.