Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)
- Volume 5 Issue 1 Serial No. 14
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- Pages.39-43
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- 2006
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- 1738-2270(pISSN)
Formation and Characterization of Polyvinyl Series Organic Insulating Layers
폴리비닐 계열 유기절연막 형성과 특성평가
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Jang Ji-Geun
(Department of Electronics Engineering, Dankook University) ;
- Jeong Jin-Cheol (Division of Computer Information, Baekseok college) ;
- Shin Se-Jin (Division of Computer Information, Baekseok college) ;
- Kim Hee-Won (Division of Computer Information, Baekseok college) ;
- Kang Eui-Jung (Division of Computer Information, Baekseok college) ;
- Ahn Jong-Myong (Division of Computer Information, Baekseok college) ;
- Seo Dong-Gyun (Division of Computer Information, Baekseok college) ;
- Lim Yong-Gyu (Division of Computer Information, Baekseok college) ;
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Kim Min-Young
(Division of Computer Information, Baekseok college)
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장지근
(단국대학교 전자공학과) ;
- 정진철 (백석문화대학 컴퓨터정보학부) ;
- 신세진 (백석문화대학 컴퓨터정보학부) ;
- 김희원 (백석문화대학 컴퓨터정보학부) ;
- 강의정 (백석문화대학 컴퓨터정보학부) ;
- 안종명 (백석문화대학 컴퓨터정보학부) ;
- 서동균 (백석문화대학 컴퓨터정보학부) ;
- 임용규 (백석문화대학 컴퓨터정보학부) ;
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김민영
(백석문화대학 컴퓨터정보학부)
- Published : 2006.03.01
Abstract
The polyvinyl series organic films as gate insulators of thin film transistor(TFT) have been processed and characterized on the polyether sulphone (PES) substrates . The poly-4-vinyl phenol(PVP) and polyvinyl toluene (PVT) were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series; copolymer PVP(10 wt%), 5wt% cross-linked PVP(10 wt%), copolymer PVP(20 wt%), 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current of 1.2 pA at