• Journal of Electrical Engineering and information Science
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• 제3권3호
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• pp.391-395
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• 1998

The impact of LDD structure on the single-poly EEPROMs is investigated in this paper. The single-poly EEPROMs are fabricated using the 0.8$\mu\textrm{m}$ CMOS ASIC process. The single-poly EEPROMs with LDD structure have slower program and erase speeds, but the drain and gate stresses and the endurance characteristics of these devices are much better than those of the single-poly EEPROMs with single-drain structure. The single-poly EEPROMs with LDD structure do not require the process modifications and need no additional masks, hence can be used for microprocessors and logic circuits with low-density and low-cost embedded EEPROMs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.359-360
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• 2007

In this paper, the elastic modulus and hardness of poly 3C-SiC thin films growed by APCVD were measured using nanoindentation test. The resulting values of elastic modulus E and hardness H of the poly 3C-SiC film are 305 GPa and 26 GPa, respectively. The mechanical properties of the poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion resistance, high frequency, and bio MEMS applications.

• 공업화학
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• 제26권4호
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• pp.458-462
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• 2015

전도성 고분자인 poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT/PSS)의 투명한 필름을 제조하기 위해서는 바인더의 사용이 반드시 필요하다. 본 연구에서는 poly(vinyl alcohol) (PVA), poly(vinyl pyrrolidone) (PVP) 및 PSS를 바인더로서 검토하여 그 특성을 비교하였다. PEDOT/PSS 필름의 형성 여부는 기본적으로 바인더를 포함하는 코팅액의 표면장력 값에 의존하였다. PSS 또는 PVP를 바인더로 사용하였을 때는 필름이 형성되지 않거나 필름이 기재로 부터 쉽게 박리되는 현상이 나타났다. 그러나 PVA를 단독으로 사용하거나 또는 PSS 및 PVP를 PVA와 혼합하여 사용하면 투명하며 균일한 표면저항 값을 나타내는 대전방지 필름을 얻을 수 있었다. 필름의 접착력 및 장기 보관 안정성 등을 종합적으로 판단하면, PEDOT/PSS의 대전방지용 필름을 제조하기 위한 바인더로서는 PVA와 PSS의 혼합물이 최적인 것으로 나타났다.

• 한국진공학회지
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• 제12권2호
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• pp.130-135
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• 2003

최근, poly-Si 박막은 저가의 박막소자응용을 위하여 사용되어 왔다. 그러나, 유리기판 위에서 일반적인 고상결정화(SPC) 방식으로 poly-Si 박막을 얻기는 불가능하다. 이러한 단점 때문에 유리와 같은 저가기판 위에 poly-Si을 결정화하는 연구가 최근 다양하게 진행되고 있다. 본 논문에서는 급속열처리(RTA)를 이용하여 유연한 기판인 몰리브덴 기판 위에서 a-Si:H를 성장시킨 후 고온결정화에 대한 연구를 진행하였다 고온결정화된 poly-Si 박막은 150$\mu\textrm{m}$ 두께의 몰리브덴 기판 위에 성장되었으며 결정화 온도는 고 진공하에서 $750^{\circ}C$~$1050^{\circ}C$ 사이에서 결정화된 시료에 대하여 결정화도, 결정화 면방향, 표면구조 및 전기적 특성이 조사되었다. 결정화온도 $1050^{\circ}C$에서 3분간 결정화된 시료의 결정화도는 92%를 나타내고 있었다. 결정화된 poly-Si 박막으로 제작된 TFT 소자로부터 전계효과 이동도 67 $\textrm{cm}^2$/Vs을 얻을 수 있었다.

• 한국기계가공학회지
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• 제14권4호
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• pp.134-139
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• 2015

PolyJet technology is an additive manufacturing (AM) technology commonly used for modeling, prototyping, and production applications. It is one of the techniques used for 3D printing. The PolyJet technique is a process that joins materials to fabricate a product from 3D CAD data in a layer-by-layer manner. The orientation of a layer can affect the mechanical properties of the product manufactured by the PolyJet technique because of its anisotropy. In this paper, tensile and shearing tests of specimens were developed with the PolyJet technique in order to study the mechanical properties according to the orientation of a layer. The mechanical properties of the specimens were determined on the basis of true stress-strain curves from tensile and shearing tests. In addition, the tensile and shearing tests were simulated under the same conditions as those of experiment, and the experiment and simulated results were compared. Through this study, the fracture criteria could be established.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.175-176
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• 2007

This paper describes on the characteristics of Pd thin films deposited on poly-crystalline 3C-SiC buffer layers for microsensors, in which the poly 3C-SiC was grown on Si, $SiO_2$, and AlN substrates, respectively, by APCVD using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min. In this work, a Pd thin film was deposited on the poly 3C-SiC film by RF magnetron sputter. The thickness, uniformity, and quality of these samples were evaluated by SEM. Crystallinity and orientation of the Pd film were analyzed by XRD. Finally, Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. From these results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensors and other microsensors.

• 대한수학회논문집
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• 제36권3호
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• pp.423-445
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• 2021

In this paper, a new form of poly-Genocchi polynomials is defined by means of polylogarithm, namely, the Apostol-type poly-Genocchi polynomials of higher order with parameters a, b and c. Several properties of these polynomials are established including some recurrence relations and explicit formulas, which are used to express these higher order Apostol-type poly-Genocchi polynomials in terms of Stirling numbers of the second kind, Apostol-type Bernoulli and Frobenius polynomials of higher order. Moreover, certain differential identity is obtained that leads this new form of poly-Genocchi polynomials to be classified as Appell polynomials and, consequently, draw more properties using some theorems on Appell polynomials. Furthermore, a symmetrized generalization of this new form of poly-Genocchi polynomials that possesses a double generating function is introduced. Finally, the type 2 Apostolpoly-Genocchi polynomials with parameters a, b and c are defined using the concept of polyexponential function and several identities are derived, two of which show the connections of these polynomials with Stirling numbers of the first kind and the type 2 Apostol-type poly-Bernoulli polynomials.

• 반도체디스플레이기술학회지
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• 제4권1호
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• pp.23-27
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• 2005

This paper presents a simulation methodology for the poly-silicon oriented TCAD(technology-CAD) system. A computer simulation environment for the poly-silicon processing has been set up with the proper adoption of the two-stream model for ion-doping, diffusion, and defects inside of grain and on the grain boundary. After the simulator calibration, simulation results for the poly-silicon diffusion hat shown a good agreement with the SIMS data.

• 전자공학회논문지A
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• 제33A권7호
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• pp.127-133
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• 1996

In this paper, we propose a new fabrication method for poly-Si TFTs with a self-aligned offset gated structure by employing a photoresist reflow process. Compared with the conventional poly-Si TFTs, the device is consist of two gate electrodes, of which one is the entitled main gate where the gate bias is employed and the other is the entitled subgate which is separate form both sides of the main gate. The poly-Si channel layer below the offset oxide is protected form the injected ion impurities for the source/drain implantation and acts as an offset region of the proposed device. The key feature of oru new device is the offset region due to the offset oxide. our experimental reuslts show that the offset region, due to the photoresist reflow process, has been sucessfully obtained in order to fabricate the offset gated poly-Si TFTs. The maximum ON/OFF ratio occurs at the L$_{off}$ of 1.1${\mu}$m and exceeds 1X10$^{6}$.