• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.1022-1030
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• 2003

In this paper we propose a efficient offset curve construction algorithm for $C^0$-continuous Open and Closed 2D sequence curve with line segment in the plane. One of the most difficult problems of offset construction is the loop problem caused by the interference of offset curve segments. Prior work[1-10] eliminates the formation of local self-intersection loop before constructing a intermediate(or raw) offset curve, whereas the global self-intersection loop are detected and removed explicitly(such as a sweep algorithm[13]) after constructing a intermediate offset curve. we propose an algorithm which removes global as well as local intersection loop without making a intermediate offset curve by forward tracing of tangential circle. Offset of both open and closed poly-line segment sequence curve in the plane constructs using the proposed approach.

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.142-148
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• 2023

In this paper, we identify performance issues in executing compute kernels from PolyBench, which includes compute kernels that are the core computational units of various data-intensive workloads, such as deep learning and data-intensive applications, on Processing-in-Memory (PIM) devices. Therefore, using our in-house simulator, we measured and compared the various performance metrics of workloads based on traditional out-of-order and in-order processors with Processing-in-Memory-based systems. As a result, the PIM-based system improves performance compared to other computing models due to the short-term data reuse characteristic of computational kernels from PolyBench. However, some kernels perform poorly in PIM-based systems without a multi-layer cache hierarchy due to some kernel's long-term data reuse characteristics. Hence, our evaluation and analysis results suggest that further research should consider dynamic and workload pattern adaptive approaches to overcome performance degradation from computational kernels with long-term data reuse characteristics and hidden data locality.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1738-1740
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• 1999

This paper deals with a novel structure of poly-Si solar cell. A solar cell conversion efficiency was degraded by grain boundary effect in Polycrystalline silicon. To reduce grain boundary effect, we performed a preferential grain boundary etching, $POCl_3$ n-type emitter doping, and then ITO film growth on poly-Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth about $10{\mu}m$. RF magnetron sputter grown ITO films showed a low resistivity of $10^{-4}\Omega-cm$ and high transmittance of 85%. With well fabricated poly-Si solar cells. we were able to achieve as high as 15% conversion efficiency at the input power of 20mW/$cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.236-236
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2\times10^{-3}\;A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about $400^{\circ}C$. According to $H_2$ concentrations, their barrier height($\Phi_{Bn}$) were changed 0.587 eV, 0.579 eV, 0.572 eV and 0.569 eV, respectively. the current was increased. Characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.1
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• pp.914-920
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• 2015

In this paper, the crystal structure and the crystallinity of PLA(PolyLactic Acid) were studied. PLA is a eco-friendly thermoplastic which completely decomposed by microorganisms, but has low thermal stability and low degree of crystallinity. The low crystallization rate makes the cycle time of injection molding longer and the degree of crystallinity lower. It is a very big disadvantage comparing the other thermoplastics. We improved the degree of crystallinity and the crystallization rate by introducing nucleating agents and plasticizer, and discussed the mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.1
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• pp.49-55
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• 2015

This paper reports solution-processed, high-efficiency organic light-emitting diodes (OLEDs) fabricated by a knife coating method under ambient air conditions. In addition, indium tin oxide (ITO), traditionally used as the anode, was substituted by optimizing the conductivity enhancement treatment of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films on a polyethylene terephthalate (PET) substrate. The transmittance and sheet resistance of the optimized PEDOT:PSS anode were 83.4% and $27.8{\Omega}/sq$., respectively. The root mean square surface roughness of the PEDOT:PSS anode, measured by atomic force microscopy, was only 2.95 nm. The optimized OLED device showed a maximum current efficiency and maximum luminous density of 5.44 cd/A and $8,356cd/m^2$, respectively. As a result, the OLEDs created using the PEDOT:PSS anode possessed highly comparable characteristics to those created using ITO anodes.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.2
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• pp.103-107
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• 2004

This paper was studied the properties of materials for treatment of anionic chromate$(CrO4^{-2})$ in industrial wastewater. Ion exchange fiber, poly(acryloamidino diethylene diamine) with ion exchange and adsorption was prepared PAN fiber and diethylenetriamine under $AlC1_3$ catalyst at $120^\circ{C}$ and was analyzed $^{{13}/C-NMR$}$ and FT-IR spectroscopy. The maximum adsorption and the coordination of chromate on chelating fiber were analyzed FT-IR spectra. We proposed the coordination structure with inter/intramolecular bond.

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.483-490
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• 1997

Thin film Si has been used in sensors, radiation detectors, and solar cells. The carrier mobility of thin film Si influences the device behavior through its frequency response or time response. Since poly-Si shows the higher mobility value, a-Si:H films on Mo substrate were subjected to various crystallization treatments. Consequently, we need to find an appropriate method in mobility measurement before and after the anneal treatment. This paper investigates the carrier mobility improvement with anneal treatments and summarizes the mobility measurement methods of the a-Si:H and poly-Si film. Various techniques were investigated for the mobility determination such as Hall mobility, HS, TOF, SCLC, TFT, and TCO method. We learned that TFT and TCO method are suitable for the mobility determination of a-Si:H and poly-Si film. The measured mobility was improved by $2{\sim}3$ orders after high temperature anneal above $700^{\circ}C$ and grain boundary passivation using an RF plasma rehydrogenation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.