Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.236-236
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- 2009
Fabrication of Pd/poly 3C-SiC Schottky diode hydrogen sensors
Pd/다결정 3C-SiC 쇼트키 다이오드형 수소센서의 제작
- Chung, Dong-Yong (University of Ulsan) ;
- Chung, Gwiy-Sang (University of Ulsan)
- Published : 2009.06.18
Abstract
This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C - SiC thin film grown on Si substrates with thermal oxide layer using APCVD. Pd/poiy 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were