• 제목/요약/키워드: polarization switching

검색결과 160건 처리시간 0.029초

PFM을 이용한 AlN 박막의 압전특성 분석에 관한 연구 (A study for piezoelectric properties analysis of the AlN thin film by using PFM)

  • 이종택;김세영;신현창;송준태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.224-225
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    • 2009
  • Aluminium nitride thin film was deposited on Au electrode and Si substrate by radio frequency sputtering system. X-ray diffraction (XRD) was utilized to identify the AlN phase, and Atomic Force Microscope (AFM) was used to obtain the images of surface morphology and roughness value of AlN thin film. The result of XRD and AFM measurement showed that the AlN thin film has strong c-axs orientation and smooth surface. In order to investigate piezoelectric response and polarization properties along to the direction of electric field, PFM (Piezoresponse Force Microscope) system was used, and the images of piezoelectric response due to switching of polarization was observed by PFM.

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졸-겔법으로 형성한 강유전체 PZT박막의 고온 단시간 열처리효과 및 전자 디바이스에의 응용 (The rapid thermal annealing effects and its application to electron devices of Sol-Gel derived ferroelectric PZT thin films)

  • 김광호
    • E2M - 전기 전자와 첨단 소재
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    • 제7권2호
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    • pp.152-156
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    • 1994
  • The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

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경사 증착된 비정질 칼코게나이드 박막에 평광-광유기된 이색성의 이완 및 소거 특성 (The Relaxation and Elimination Characteristics of Polarization-Photoinduced Dichrosim in Obliquely Deposited Amorphous Chalcogenide Thin Films)

  • 박수호;전진영;이현용;정홍배
    • 한국전기전자재료학회논문지
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    • 제11권10호
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    • pp.891-896
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    • 1998
  • The relaxation and elimination characteristics of polarization-photoinduced dichroism have been investigated in amorphous chalcogenide thin films deposited having normal(0。) and obique (80。) vapor incident angles. The dark relaxation kinetics of dichroism from a saturation point(D\ulcorner\ulcorner) to a certain relaxation point(D\ulcorner\ulcorner) grew to be longer on subsequent cycles of switching on and off of the inducing light, and these decays are changed from simple exponential decay to stretched exponential decay. The dichroism induced by a long time(~3.3 hrs) exposure exhibited the characteristics of longer time maintenance and smaller decreasing rate, in contrast with that by a short time (~min) exposure. In addition, the dichroism was eliminated by the exposure of non-polarized He-Ne laser.

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La 변성 $Pb(Sc_{1/2}Nb_{1/2})O_3-PbTiO_3$계 요업체의 전계유기변위와 분극특성 (Field-Induced Strains and Polarization Switching Mechanisms in La-Modified $Pb(Sc_{1/2}Nb_{1/2})O_3-PbTiO_3$ Ceramics)

  • 장명철
    • 한국세라믹학회지
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    • 제37권1호
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    • pp.63-69
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    • 2000
  • Electrically-induced strain(S) and polarization(P) for Pb(Sc1/2Nb1/2)O3-PbTiO3(1-x)PSN-xPT) crystalline solutions were studied. From the compositional dependence of S and P we could observe two maximum values at x=0.10 and x=0.425. It is considered that PSNT10(x=0.10) composition is the structural phase boundary to indicate the variable order-disorder[VOD] region. PSNT(x=0.425) composition is the morphotropic phase boundary[MPB] to indicate the rhombohedral to tetragonal phase transition. Higher S (0.437%) and P (0.3974$\mu$C/$\textrm{cm}^2$) values were attained by the La substitution (5 wt%) at Pb site in the MPB composition of 57.5PSN-42.5PT.

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FLC SLM을 이용한 편광의존형 2×2 광스위치 (Polarization dependent 2×2 optical switch using ferroelectric liquid crystal (FLC) Spatial Light Modulator(SLM))

  • 김인태;유연석
    • 한국광학회지
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    • 제13권5호
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    • pp.408-413
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    • 2002
  • We demonstrated a polarization dependent type 2$\times$2 optical switch, using a binary reflection type SLM. Reflection type FLC was used as a half wave retardation plate. Two inputs were controlled by each SLM for the desired output direction. In conclusion, in the "1" state the average optical loss was 6.6 ㏈, and in the "0" state the average optical loss was 14.6 ㏈, and measured the switching speed as 75 $mutextrm{s}$. By using this method, a polarization dependent type 2$\times$2 optical switch can be demonstrated and the possibility of a 4-port WDM optical switch also verified.

Domain Switching and Crack Propagation of $BaTiO_3$ Single Crystal in Different Environments

  • Gao, Kewei;Zhao, Xianwu;Wang, Ruimin;Qiao, Lijie;Chu, Wuyang
    • Corrosion Science and Technology
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    • 제7권6호
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    • pp.307-314
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    • 2008
  • The influence of a moist atmosphere on $90^{\circ}$ domain switching under a sustained electric field, stress corrosion cracking of an indentation crack in water and an aggressive solution, and the relation between penetrating crack propagation and domain switching were studied using $BaTiO_3$ single crystal. The results indicate that enlarging the domain switching zone and crack propagation could be facilitated by a moist atmosphere or an aggressive solution due to the indentation residual stress. A moist atmosphere exerts remarkable influence upon the polarization of $BaTiO_3$ single crystal under a sustained electric field, and the surface energy of the c domain was much lower than that of the a domain. Domain switching ahead of a penetrating indentation crack tip was an essential requirement for crack propagation under constant stress.

비전통핵생성 이론 관점에서 탄산칼슘의 반응경로에 대한 시간분해 분극 및 탈분극 추적 (Time-resolved polarization and depolarization tracking on reaction pathway of calcium carbonates in a view of non-classical nucleation theory)

  • 김광목
    • 도시과학
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    • 제9권2호
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    • pp.45-50
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    • 2020
  • The formation characteristics of calcium carbonates are closely related to the durability and mechanical properties of cement-based materials. In this regard, a deep understanding of the reaction pathway of calcium carbonates is critical. Recently, non-classical nucleation theory was summarized and it was presumed that prenucleation clusters are present. The formation of the prenucleation cluster at undersaturated condition (≈ 0.1 ml) in the present study was investigated via electrical characteristics of an electrolytic solution. Calcium chloride dihydrate (CaCl2·2H2O) and sodium carbonate (Na2CO3) were used as starting materials to supply calcium and carbonate sources, respectively. Furthermore, the reaction pathway of calcium carbonates was investigated by time-resolved polarization and depolarization characteristics of the electrolytic solution. The time-resolved polarization and depolarization tests were conducted by switching polarity with an interval of 20 seconds for 1 hr and by measuring the variation of electrical resistance. It can be inferred from the results obtained in the present study that the reactive constituent for the formation of calcium carbonates was mostly consumed in the period possibly associated with the prenucleation and the reaction pathways may be governed by the monomer-addition mechanism.

편광 상태와 메타 물질을 이용한 전자기파 유도 에너지 전달 제어 (Polarization-Dependent Electromagnetically-Induced Transparency by Using Metamaterial)

  • 박진우;김성일;장원호;이영백
    • 한국전자파학회논문지
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    • 제23권3호
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    • pp.406-409
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    • 2012
  • 메타 물질에서의 전자기파 유도 에너지 전달 제어에 관한 연구가 마이크로파 영역에서 실험 및 전산 모사를 통해 이루어졌다. 제시된 메타 물질은 기판을 사이로 두 개의 링 타입 공진기가 비대칭적으로 배열된 구조이고, 전자기파의 유도 에너지 전달이 편광 상태에 크게 의존함을 확인할 수 있었다. 본 연구는 마이크로파 제어 및 관련 응용 분야에 새로운 가능성을 제시할 수 있을 것이다.

Pt/LiNbO3/AlN/Si(100) 구조를 이용한 MFIS 커패시터의 전기적 특성 (Electric Properties of MFIS Capacitors using Pt/LiNbO3/AlN/Si(100) Structure)

  • 정순원;김광호
    • 한국전기전자재료학회논문지
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    • 제17권12호
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    • pp.1283-1288
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    • 2004
  • Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.