Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A study for piezoelectric properties analysis of the AlN thin film by using PFM

PFM을 이용한 AlN 박막의 압전특성 분석에 관한 연구

  • 이종택 (성균관대학교 정보통신공학부) ;
  • 김세영 (성균관대학교 정보통신공학부) ;
  • 신현창 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Published : 2009.06.18
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Abstract

Aluminium nitride thin film was deposited on Au electrode and Si substrate by radio frequency sputtering system. X-ray diffraction (XRD) was utilized to identify the AlN phase, and Atomic Force Microscope (AFM) was used to obtain the images of surface morphology and roughness value of AlN thin film. The result of XRD and AFM measurement showed that the AlN thin film has strong c-axs orientation and smooth surface. In order to investigate piezoelectric response and polarization properties along to the direction of electric field, PFM (Piezoresponse Force Microscope) system was used, and the images of piezoelectric response due to switching of polarization was observed by PFM.

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