Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Relaxation and Elimination Characteristics of Polarization-Photoinduced Dichrosim in Obliquely Deposited Amorphous Chalcogenide Thin Films

경사 증착된 비정질 칼코게나이드 박막에 평광-광유기된 이색성의 이완 및 소거 특성

  • 박수호 (광운대학교 공대 전자재료공학과) ;
  • 전진영 (광운대학교 공대 전자재료공학과) ;
  • 이현용 (광운대학교 신기술연구소) ;
  • 정홍배 (광운대학교 공대 전자재료공학과)
  • Published : 1998.10.01
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Abstract

The relaxation and elimination characteristics of polarization-photoinduced dichroism have been investigated in amorphous chalcogenide thin films deposited having normal(0。) and obique (80。) vapor incident angles. The dark relaxation kinetics of dichroism from a saturation point(D\ulcorner\ulcorner) to a certain relaxation point(D\ulcorner\ulcorner) grew to be longer on subsequent cycles of switching on and off of the inducing light, and these decays are changed from simple exponential decay to stretched exponential decay. The dichroism induced by a long time(~3.3 hrs) exposure exhibited the characteristics of longer time maintenance and smaller decreasing rate, in contrast with that by a short time (~min) exposure. In addition, the dichroism was eliminated by the exposure of non-polarized He-Ne laser.

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References

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