• 제목/요약/키워드: plasma ion density

검색결과 257건 처리시간 0.024초

Theoretical construction of solar wind proton temperature anisotropy versus beta inverse correlation

  • 서정준;;김관혁;이동훈
    • 천문학회보
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    • 제37권2호
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    • pp.118.1-118.1
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    • 2012
  • In situ observations from the Wind spacecraft that statistically analyzed the solar wind proton at 1 AU has indicated that the measured proton temperature anisotropies seems to be regulated by the oblique instabilities (the mirror and oblique firehose). This result is in contradiction with the prediction of linear kinetic theory that the ion-cyclotron (for ${\beta}_{\parallel}$ < 2) and parallel firehose (for ${\beta}_{\parallel}$ <10) would dominate over the oblique instabilities. Various kinds of physical mechanisms have been suggested to explain this disagreement between the observations and linear theory. All of the suggestions consider the solar wind as a unoform magnetized plasma. However the real space environment is replete with the intermediate spatio-temporal scale variations associated with various physical quantities, such as the magnetic field intensity and the solar wind density. In this paper we present that the pervasive intermediate-scale temporal variation of the local magnetic field intensity can lead to the modification of the proton temperature anisotropy versus beta inverse correlation for temperature-anisotropy-driven instabilities. By means of quasilinear kinetic theory involving such temporal variation, we construct the simulated solar wind proton data distribution associated the magnetic fluctuations in (${\beta}_{\parallel}$, $T_{\perp}/T_{\parallel}$) space. It is shown that the theoretically simulated proton distribution and a general trend of the enhanced fluctuations bounded by the oblique instabilities are consistent with in situ observations. Furthermore, the measure magnetic compressibility can be accounted for by the magnetic spectral signatures of the unstable modes.

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Diamond-Like Carbon Films Deposited by Pulsed Magnetron Sputtering System with Rotating Cathode

  • Chun, Hui-Gon;You, Yong-Zoo;Nikolay S. Sochugov;Sergey V. Rabotkin
    • 한국표면공학회지
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    • 제36권4호
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    • pp.296-300
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    • 2003
  • Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

$BCl_3$에 기초한 고밀도 유도결합 플라즈마에 의한 AlGaAs/GaAs 건식식각 비교 (Comparison of Dry Etching of AlGaAs/GaAs in High Density Inductively Coupled $BCl_3$ based Plasmas)

  • 백인규;임완태;이제원;조관식;조국산
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.63-63
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    • 2003
  • 플라즈마 공정은 DRAM, 이종접합 양극성 트랜지스터(HBTs), 레이저, 평면도파로(planar lightwave circuit)와 같은 전자소자 및 광조자 제작에 있어서 핵심 공정중의 하나이다. 최근 미세 구조의 크기가 극도로 감소하게 됨에 따라 실제 소작 제작에 있어서 미세한 모양을 식각하는 공정이 매우 중요하게 되었다. 그 중에서 고밀도 유도결합 플라즈마(high density inductively coupled plasma)를 이용한 기술은 빠르고 정확한 식각률, 우수한 식각 균일도와 높은 재현성 때문에 습식식각 기술보다 선호되고 있다. 본 연구는 평판형(planar) 고밀도 유도결합 플라즈마 식각장치를 이용하여 BCl$_3$와 BCl$_3$/Ar 플라즈마에 따른 AlGaAs/GaAs의 식각결과를 비교 분석하였다. 공정 변수는 ICP 소스(source power)파워, RIE 척(chuck) 파워, 공정 압력, 그리고 Ar 조성비(0-100%)이었다. BCl$_3$에 Ar을 첨가하게 되면 순수한 BCl$_3$ 플라즈마에서의 AlGaAs/GaAs 식각률(> 3000 $\AA$/min) 보다 분당 약 1000$\AA$ 이상 높은 식각률(>4000 $\AA$/min)을 나타내었다. 이 결과는 Ar 플라즈마의 이온보조(ion-assisted)가 식각률 증가에 기인한다고 예측된다. 그리고 전자주사 현미경(SEM)과 원자력간 현미경(AFM)을 사용하여 식각 후 표면 거칠기 및 수직 측벽도 둥을 분석하였다. 마지막으로 XPS를 이용하여 식각된 후에 표면에 남아 있는 잔류 성분 분석을 연구하였다. 본 결과를 종합하면 BCl$_3$에 기초한 평판형 유도결합 플라즈마는 AlGaAs/GaAs 구조의 식각시 많은 우수한 특성을 보여주었다.79$\ell/\textrm{cm}^3$, 0.016$\ell/\textrm{cm}^3$, 혼합재료 2는 0.045$\ell/\textrm{cm}^3$, 0.014$\ell/\textrm{cm}^3$, 혼합재료 3은 0.123$\ell/\textrm{cm}^3$, 0.017$\ell/\textrm{cm}^3$, 혼합재료 4는 0.055$\ell/\textrm{cm}^3$, 0.016$\ell/\textrm{cm}^3$, 혼합재료 5는 0.031$\ell/\textrm{cm}^3$, 0.015$\ell/\textrm{cm}^3$, 혼합재료 6은 0.111$\ell/\textrm{cm}^3$, 0.020$\ell/\textrm{cm}^3$로 나타났다. 3. 단일재료의 악취흡착성능 실험결과 암모니아는 코코넛, 소나무수피, 왕겨에서 흡착능력이 우수하게 나타났으며, 황화수소는 펄라이트, 왕겨, 소나무수피에서 다른 재료에 비하여 상대적으로 우수한 것으로 나타났으며, 혼합충진재는 암모니아의 경우 코코넛과 펄라이트의 비율이 70%:30%인 혼합재료 3번과 소나무수피와 펄라이트의 비율이 70%:30%인 혼합재료 6번에서 다른 혼합재료에 비하여 우수한 것으로 나타났으며, 황화수소의 경우 혼합재료에 따라 약간의 차이를 보였다. 4. 코코넛과 소나무수피의 경우 암모니아가스에 대한 흡착성능은 거의 비슷한 것으로 사료되며, 코코넛의 경우 전량을 수입에 의존하고 있다는 점에서 국내 조달이 용이하며, 구입 비용도 적게 소요되는 소나무수피를 사용하는 것이 경제적이라고 사료된다. 5. 마지막으로 악취제거 미생물균주를 접종한 소나무수피 70%와 펄라이트 30%의 혼합재료를 24시간동안 장기간 운전

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MFMIS 게이트 구조에서의 메모리 윈도우 특성 (Characteristics of Memory Windows of MFMIS Gate Structures)

  • 박전웅;김익수;심선일;염민수;김용태;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.319-322
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    • 2003
  • To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

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SrBi$_2$Ta$_2$O$_9$ 박막에 있어서 Ar/C1$_2$가스의 비율 및 RF/DC Power Density의 변화에 따른 수직 식각의 특성연구 (Vortical Etching Characteristics of SrBi$_2$Ta$_2$O$_9$ thin Films Depending on Ar/Cl$_2$ Ratios and RF/DC Power Densities)

  • 황광명;이창우;김성일;김용태;권영석;심선일
    • 마이크로전자및패키징학회지
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    • 제8권3호
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    • pp.49-53
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    • 2001
  • 유도결합형 플라즈마 (ICP-RIE) 장치를 이용하여 SBT ($SrBi_2Ta_2O_9$)/Si의 수직식각 실험을 하였다. 이와 같은 실험의 목적은 수직 단면구조의 강유전체 gate구조 및 capacitor 제조에 있어서 유효면적을 확보하고 parasitic effect를 최소화 하는 기술이 우수한 소자 특성을 얻기 위해 매우 중요한 기술이기 때문이다. $Ar/C1_2$를 반응가스로 사용하였으며 $Ar/C1_2$유량비를 각각 1, 0.8, 0.6, 0.4로 바꾸어 가면서 각 유량비에 대해 RF power를 700, 600, 500W로 변화시키는 동안 DC power를 각각 200, 150, 100, 50 W로 변화시키면서 식각 실험을 하였다. 식각조건 변화에 따른 수직 및 수평 식각율, 선택식각율, 감광막의 보호성, 리소그라피 조건에 따른 식각율 및 식각단면 구조의 특성, 식각율 변화에 따른 패턴 크기의 변화, SBT의 식각 단면 특성 등을 조사하였다. $Ar/C1_2$유량비가 0.8, RF power 700 W, DC power 200 W 일 때 식각속도는 1050 A/min으로 최적의 식각율을 확인하였다. 그리고 주사전자현미경의 관찰 결과 수 적도는 $82^{\circ}C$ 정도로 매우 양호함을 알 수 있었다.

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박막증착시 티타늄 표면의 마손저항도와 세포독성에 관한 연구 (A STUDY ON THE RESISTANCE OF WEAR AND CYTOTOXICITY OF THE TITANIUM SURFACE AFTER FILM DEPOSITIONS)

  • 김형우;김창회;김영수
    • 대한치과보철학회지
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    • 제39권1호
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    • pp.84-95
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    • 2001
  • Titanium is widely used in dentistry for its low density, high strength, fatigue resistance, corrosion resistance, and biocompatibility. But it has a tendency of surface damage under circumstance of friction and impact for its low hardness of the surface. Coating is one of methods fir increasing surface hardness. Its effect is to improve surface physical characteristics without change of titanium. Diamond-like carbon and titanium nitride are known for its high hardness of the surface. So that this study was aimed at the wear test and the cytotoxicity test of the commercially pure titanium and Ti-6Al-4V alloy which were deposited by diamond-like carbon film or titanium nitride film to acertain improvement of the surface hardness and the biocompatibility. A disk (25mm diameter, 2mm thickness) was made of commercially pure titanium and Ti-6Al-4V alloy and these substrates were deposited by diamond-like carbon film or titanium nitride film. Diamond-like carbon film was deposited by the method of radiofrequency plasma assisted chemical vapor deposition and titanium nitride film was deposited by the method of reactive arc ion plating. Then these substrates were tested about wear characteristics by the pin-on-disk type wear tester in which ruby ball was used as a wear causer under the load of 32N, The fracture cycles were measured by rotating the substrates until their films were fractured. The wear volume was measured after 150 cycles and 3,000 cycles using surface profiler. The cytotoxicity test was peformed by the method of the MTT assay. The results were as follows : 1. In the results of the wear volume test, commercially pure titanium and titanium alloy which were coated by diamond-like carbon film or titanium nitride aim had higher resistance against wear than the substrates which were not coated by any films (P<0.05). 2. In the results of the fracture cycle test and the wear volume test, diamond-like carbon film had higher resistance against wear than titanium nitride film (P<0.05). 3. In both coatings of diamond-like carbon aim and titanium nitride film, Ti-6Al-4V alloy had higher resistance against wear than commercially pure titanium (P<0.05) 4. In the results of the cytotoxicity test, diamond-like carbon film and titanium nitride film had little cytotoxicity as like commercially pure titanium or Ti-6Al-4V alloy (P>0.05).

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고안정성 리튬이온전지 양극활물질용 Ti 치환형 LiNi0.6Co0.2Mn0.2O2 연구 (Study on Ti-doped LiNi0.6Co0.2Mn0.2O2 Cathode Materials for High Stability Lithium Ion Batteries)

  • 전용희;임수아
    • 전기화학회지
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    • 제24권4호
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    • pp.120-132
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    • 2021
  • 기존 LiCoO2의 고전압 사용의 제약에 따른 용량적 한계와 코발트 원료의 높은 가격을 해결하기 위하여 high-Nickel에 대한 개발이 활발히 진행되고 있지만 Ni 함량의 증가에 따른 구조적 안정성의 저하에 의한 전지 특성의 저하는 상용화를 지연시키는 중요한 원인이 되고 있다. 이에 Ni-rich 삼성분계 양극소재 LiNi0.6Co0.2Mn0.2O2의 고안정성을 높이고자 전구체에 균일한 이종원소 Ti를 치환을 위해서 나노크기의 TiO2 서스펜젼 형태 소스를 사용하여 전구체 Ni0.6Co0.2Mn0.2-x(OH)2/xTiO2를 제조하였다. Li2CO3와 혼합하고, 열처리 후 양극활물질 LiNi0.6Co0.2Mn0.2-xTixO2 합성하여 Ti 함량에 따른 물리적 특성을 비교하였다. Field Emission Scanning electron Microscope(FE-SEM) 및 Energy Dispersive Spectroscopy (EDS) mapping 분석을 통해 Ti 치환된 구형의 전구체와 입자 크기 측정을 통해 균일한 입자크기를 가지는 양극 활물질 제조를 확인하였고, 내부치밀도와 강도가 증가함을 확인 하고, X-ray Diffractometry (XRD) 구조 분석과 Inductively Coupled Plasma Mass Spectrometry (ICP-MS) 정량분석을 통해 Ti 치환된 양극활물질 제조 및 고온, 고전압에서 충·방전을 지속하더라도 효과적으로 용량이 유지됨을 확인하였다.