• Journal of Astronomy and Space Sciences
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• 제23권3호
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• pp.209-216
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• 2006

Ion acoustic solitary wave in a plasma consisting of electrons and ions with an external magnetic field is reinvestigated using the Sagdeev's potential method. Although the Sagdeev potential has a singularity for n < 1, where n is the ion number density, we obtain new solitary wave solutions by expanding the Sagdeev potential up to ${\delta}n^4$ near n = 1. They are compressiv (rarefactive) waves and shock type solitary waves. These waves can exist all together as a superposed wave which may be used to explain what would be observed in the solar wind plasma. We compared our theoretical results with the data of the Freja satellite in the study of Wu et al. (1996). Also it is shown that these solitary waves propagate with a subsonic speed.

• 한국표면공학회지
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• 제50권2호
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• pp.91-97
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• 2017

The aim of this paper is to investigate the characteristics of electrochemical corrosion with the plasma ion nitriding temperature for 16Cr-10Ni-2Mo stainless steel. The corrosion behavior was analyzed by means of galvanostatic experiment in natural seawater that applied various current density with plasma ion nitriding temperature parameters. In result of galvanostatic experiment, relatively less surface damage morphology and the less damage depth was observed at a nitrided temperature of $450^{\circ}C$ that measured the thickest nitrided layer(S-phase). On the other hand, the most damage depth and unified corrosion behavior presented at a temperature of $500^{\circ}C$.

• 한국정밀공학회지
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• 제22권5호
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• pp.175-180
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• 2005

The application of focused ion beam (FIB) technology in micro/nano machining has become increasingly popular. Its use in micro/nano machining has advantages over contemporary photolithography or other micro/nano machining technologies such as small feature resolution, the ability to process without masks and being accommodating for a variety of materials and geometries. In this research, fabrication of micro plasma electrode was carried out using FIB. The one of problems of FIB-sputtering is the redeposition of material including Ga+ ion source during sputtering process. Therefore the effect of the redeposition was verified by EDX. And the micro plasma electrode of copper was fabricated by FIB.

• Applied Science and Convergence Technology
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• 제24권5호
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• pp.162-166
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• 2015

Linear ion beams have been introduced for the ion beam treatments of flexible substrates in roll-to-roll web coating systems. Anode layer linear ion sources (300 mm width) were used to make the linear ion beams. Oxygen ion beams having an ion energy from 200 eV to 800 eV used for the adhesion improvement of Cu thin films on PET substrates. The Cu thin films deposited by a conventional magnetron sputtering on the oxygen ion beam treated PET substrates showed Class 5 adhesion defined by ASTM D3359-97 (tape test). Argon ion beams with 1~3 keV used for the ion beam sputtering deposition process, which aims to control the initial layer before the magnetron sputtering deposition. When the discharge power of the linear ion source is 1.2 kW, static deposition rate of Cu and Ni were 7.4 and $3.5{\AA}/sec$, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• 한국정밀공학회지
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• 제27권1호
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• pp.33-40
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• 2010

In this research, the effects for surface Improvement of plasma ion implanted carbide endmill tools were observed by measuring cutting forces and tools wear affecting surface roughness in high speed cutting. From the 2nd ion mass analysis, the oxidation layer was found to be built up by sputtering. The residual gas contamination of oxygen was found to be contained impurities in nitrogen gas. The plasma implanted ion was found to be spreaded, especially the nitrogen was implanted up to 150nm depth as impressed voltage and ion implanting time. It is analyzed as bring surface improvement by spreading deeply forming oxidation on surface. The factors in Analysis of Variance(ANOVA) about mutuality cause reference of cutting force. The cutting force Fx is affected by the interaction of spindle rpm and federate, the cutting force Fy is influenced by spindle rpm and time injected ion, and cutting force Fz is affected by the interaction of impressed voltage and feedrate. Also, it was found that the cutting forces of implanted tools become lower and the surface roughness is improved by the effect of nitrogen according to the implantation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.530-531
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• 2013

3 MeV protonirradiated SrTiO3 (STO) single crystal exhibits a blue and green mixed luminescence. However, the same proton irradiated STO deposited with very thin Pt layer does not show any luminescence. This Pt layer involved in preventing the damage caused by arcingthat comes from tens of kV surface voltage build-up due to secondary electron induced charge up at the surface of insulator during ion beam irradiation. It implies that luminescence of ion irradiated STO originated from the modified STO surface layer caused by arcing rather than direct ion beam irradiation effect. Atmospheric pressure plasma, a simple and cost-effective method, treated STO also exhibits the same kind of blue and green mixed luminescence as the ion beam treated STO, because this plasma also creates a surface damage layer by arcing.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.261-264
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• 2014

$SrTiO_3$ (STO) single crystal irradiated with a 3-MeV proton beam exhibits blue and green mixed luminescence. However, the same proton beam when used to irradiate STO with a very thin layer of deposited Pt does not show any luminescence. This Pt layer prevents any damage which may otherwise be caused by arcing, which stems from the accumulated surface voltage of tens of kV due to the charge induced by secondary electrons on the surface of the insulator during the ion beam irradiation process. Hence, the luminescence of ion-irradiated STO originates from the modification of the STO surface layer caused by arcing rather than from any direct ion beam irradiation effect. STO treated with atmospheric-pressure plasma, a simple and cost-effective method, also exhibits the same type of blue and green mixed luminescence as STO treated with an ion beam, as the plasma also creates a layer of surface damage due to arcing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.148-148
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• 2012

A cutoff probe is the novel diagnostic method to get the absolute plasma density with simple system and less assumption. However, high density of ion flux from plasma on probe tip can make the error of plasma density measurement because the dielectric material of probe tip can be damaged by ion flux. We proposed a shielded cutoff probe using the ceramic tube for protection from ion flux. The ceramic tube on probe tip can intercept the ion flux from plasma. The transmitted spectrum using the shielded cutoff probe is good agreement with E/M wave simulation result (CST Microwave Studio) and previous circuit simulation of cutoff probe [1]. From the analysis of the measured transmitted spectrum base on the circuit modeling, the parallel resonance frequency is same as the unshielded cutoff probe case. The obtained results of electron density is presented and discussed in wide range of experimental conditions, together with comparison result with previous cutoff method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.518-521
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• 2004

The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.