• 제목/요약/키워드: plasma frequency

검색결과 856건 처리시간 0.028초

High Performance and Low Cost Single Switch Energy Recovery Display Driver for AC Plasma Display Panel

  • Han Sang Kyoo;Moon Gun-Woo;Youn Myung Joong
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2004년도 전력전자학술대회 논문집(2)
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    • pp.723-727
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    • 2004
  • A new high-performance and low cost single switch energy recovery display driver for an AC plasma display panel (PDP) is proposed. Since it is composed of only one auxiliary power switch, two small inductors, and eight diodes compared with the conventional circuit consisting of four auxiliary power switches, two small inductors, eight power diodes, and two external capacitors, it features a much simpler structure and lower cost. Nevertheless, since the rootmean-square (RMS) value of the inductor current is very small, it also has very desirable advantages such as n low conduction loss and high efficiency. Furthermore, there are no serious voltage-drops caused by the large gas-discharge current with the aid of the discharge current compensation, which can also greatly reduce the current flowing through power switches and maintain the panel to light at n lower sustaining voltage. In addition, all main power switches are turned on under the zero-voltage switching (ZVS) and thus, the proposed circuit has a improved EMI, increased reliability, and high efficiency. Therefore, the proposed circuit will be well suited to the wall hanging PDP TV. To confirm the validity of the proposed circuit, circuit operations, features,and design considerations are presented and verified experimentally on a 6-inch PDP, 50kHz-switching frequency, and sustaining voltage 141V based prototype.

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Near-infrared Subwavelength Imaging and Focusing Analysis of a Square Lattice Photonic Crystal Made from Partitioned Cylinders

  • Dastjerdi, Somayeh Rafiee;Ghanaatshoar, Majid;Hattori, Toshiaki
    • Journal of the Optical Society of Korea
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    • 제17권3호
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    • pp.262-268
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    • 2013
  • We study the focusing properties of a two-dimensional square-lattice photonic crystal (PC) comprising silica and germanium partitioned cylinders in air background. The finite difference time domain (FDTD) method with periodic boundary condition is utilized to calculate the dispersion band diagram and the FDTD method incorporating the perfectly matched layer boundary condition is employed to simulate the image formation. In contrast to the common square PCs in which the negative refraction effect occurs in the first photonic band without negative phase propagation, in our suggested model system, the frequency with negative refraction exists in the second band and in near-infrared region. In this case, the wave propagates with a negative phase velocity and the evanescent waves can be supported. We also discuss the dependency of the image resolution and its location on surface termination, source location, and slab thickness. According to the simulation results, spatial resolution of the proposed PC lens is below the radiation wavelength.

Optical and structural properties of metal-dielectric near-infrared cutoff filters for plasma display panel application

  • Lee, Jang-Hoon;Lee, Kwang-Su;Hwangbo, Chang-Kwon
    • 한국진공학회지
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    • 제12권S1호
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    • pp.88-91
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    • 2003
  • Electromagnetic interference shielding and near-infrared cutoff filters for plasma display panel application were designed and fabricated by radio frequency magnetron sputtering. Three types of the filters were prepared: the basic structure of type A consisted of [$TiO_2$ Ti Ag $TiO_2$]; type B, of [$TiO_2$ ITO Ag $TiO_2$]; type C, of [$TiO_2$ ITO Ag ITO $TiO_2$]. Ti and ITO layers deposited on Ag layers were employed as barriers to prevent the oxidation and the diffusion of Ag film into the adjacent oxide layers. Optical, electrical, chemical, and structural properties were investigated, and the result shows that the filters with the ITO barrier layers provided an enhancement in transmittance in the visible owing to a lower absorption of ITO layers than Ti layers. Type C filter showed better optical and electrical performances and smoother surface roughness than Type B and C filters: the average sheet resistance was as low as 1.51 $\Omega\Box$ (where $\square$ stands for a square film), the peak transmittance in the visible was as high as 78.2 %, and the average surface roughness was 1.48 nm.

Hot-filament 플라즈마화학기상증착법 이용한 패턴된 DLC층 위에 탄소나노튜브의 선택적 배열

  • 최은창;박용섭;홍병유
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.293-293
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    • 2010
  • Carbon nanotubes (CNTs) have attracted considerable attention as possible routes to device miniaturization due to their excellent mechanical, thermal, and electronic properties. These properties show great potential for devices such as field emission displays, CNT based transistors, and bio-sensors. The metals such as nickel, cobalt, gold, iron, platinum, and palladium are used as the catalysts for the CNT growth. In this study, diamond-like carbon (DLC) was used for CNT growth as a nonmetallic catalyst layer. DLC films were deposited by a radio frequency (RF) plasma-enhanced chemical vapor deposition (RF-PECVD) method with a mixture of methane and hydrogen gases. CNTs were synthesized by a hot filament plasma-enhanced chemical vapor deposition (HF-PECVD) method with ammonia (NH3) as a pretreatment gas and acetylene (C2H2) as a carbon source gas. The grown CNTs and the pretreated DLC filmswere observed using field emission scanning electron microscopy (FE-SEM) measurement, and the structure of the grown CNTs was analyzed by high resolution transmission scanning electron microscopy (HR-TEM). Also, using energy dispersive spectroscopy (EDS) measurement, we confirmed that only the carbon component remained on the substrate.

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Design And Implementation of a Novel Sustain Driver for Plasma Display Panel

  • Agarwal Pankaj;Kim Woo-Sup;Cho Bo-Hyung
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2006년도 전력전자학술대회 논문집
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    • pp.403-405
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    • 2006
  • Over the years, plasma display panel (PDP) manufacturers have impressed the flat panel display industry with yet another new product essentially having the merits of a larger screen size. Since larger size implies higher power ratings, voltage/current ratings of the power devices used have become a rising concern. Another important concern is the brightness of PDP, one way of increasing which is by operating the PDP at higher frequencies. In order to address the above issues, a transformer coupled sustain-driver for AC-PDP is proposed During the transition time, the two windings of the transformer greatly boost up the displacement current flowing through the panel capacitance and hence enable a fast inversion of the voltage polarity with practical values of resonant inductance. In the proposed topology, the resonant inductance can be increased by a factor of $(n+1)^2$ as compared to prior approaches. Increased inductance results in lower current stresses. Moreover, high frequency operation is possible by using higher value of n (turn ratio of the transformer). The operational principle and design procedure of the proposed circuit are presented with theoretical analysis. The validity of the proposed sustain driver is established through simulation and experimental results using a 42-in PDP

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The Relation between Emission Properties and Growth of Carbon nanotubes with dc bias by RF Plasma Enhanced Chemical Vapor Deposition

  • Choi, Sun-Hong;Han, Jae-Hee;Lee, Tae-Young;Yoo, Ji-Beom;Park, Chong-Yun;Yi, Whi-Kun;Yu, Se-Gi;Jung, Tae-Won;Lee, Jung-Hee;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.662-665
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    • 2002
  • The growth of carbon nanotubes (CNTs) was carried out using ratio frequency plasma enhanced chemical vapor deposition (rf PECVD) system equipped with dc bias for the directional growth. Acetylene and ammonia gas were used as the carbon source and a catalyst. The relation between gas flow rate and dc bias on the growth of CNTs was investigated. We studied the relation between emission properties and the directionality of CNTs grown under different dc bias voltage.

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연면방전의 플라즈마 화학처리에 의한 유해가스제어 성능에 관한 연구 (A Study on the Control Performance for Hazardous Gases by Surface Discharge induced Plasma Chemical Process)

  • 이주상;김신도;김광영;김종호
    • 한국대기환경학회지
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    • 제11권2호
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    • pp.185-190
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    • 1995
  • Recently, because of the worse of the air pollution, the excessive airtught of building and the inferiority of air conditioning system, the development of high efficiency air purification technology was enlarged to the environmental improvement of an indoor or a harmful working condition. The air purification technology has used chemical filters or charcoal filters or charcoal to remove hazardouse gaseous pollutants (SO$_{x}$, NO$_{x}$, NH$_{3}$, etc.) by air pollutant control technology, but they have many problems of high pressure loss, short life, wide space possession, and treatment of secondary wastes. For these reason, the object of reasearch shall be hazardous gaseous pollutants removal by the surface discharge induced plasma chemical process that is A.C. discharge of multistreams applied A.C. voltage and frequency between plane induced eletrode and line discharge eletrode of tungsten, platinum or titanium with a high purified alumina sheet having a film-like plane. As a result, the control performance for hazardous gaseous pollutants showed very high efficiency in the normal temperature and pressure. Also, after comtact oxidation decomposition of harmful gaseous pollutants, the remainded ozone concentration was found much lower than that of ACGIH or air pollution criteria in Korea.rea.

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활성화 반응 증발법에 의한 Al2O3 박막 형성 (Formation of Al2O3 Film by Activated Reactive Evaporation Method)

  • 박용근;최재하
    • 열처리공학회지
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    • 제14권5호
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    • pp.292-296
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    • 2001
  • In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

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플라즈마 화학 증착법(PACVD)에 의한 TiN 증착시 증착변수가 미치는 영향(I) -증착온도를 중심으로- (Effects of Deposition Parameters on TiN Film by Plasma Assisted Chemical Vapor Deposition(I) -Influence of Temperature on the TiN Deposition-)

  • 신영식;하선호;김문일
    • 열처리공학회지
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    • 제2권4호
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    • pp.1-10
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    • 1989
  • To investigate the influence of temperature on the TiN film, it was deposited on the STC-3 steel and Si-wafer from $TiCl_4/N_2/H_2$ gas mixture by using the radio frequency plasma assisted chemical vapor deposition. The deposition was performed at temperature of $400^{\circ}C-500^{\circ}C$. The results showed that crystalline TiN film was deposited over $480^{\circ}C$, and all specimens showed the crystalline TiN X-ray diffraction peaks after vacuum heat treatment for 3 hrs, at $1000^{\circ}C$, $10^{-5}torr$. While the film thickness was increased above $480^{\circ}C$, it was decreased under $480^{\circ}C$ as temperature increased. And the contents of titanium were increased and it of chlorine were decreased as temperature increased. Because temperature increase was attributed to the increase in the density of TiN film, surface hardness of TiN film was increased with temperature.

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플라즈마 화학증착법(PACVD)에 의한 TiN증착시 증착변수가 미치는 영향(II) -TiCl4, N2의 입력분율을 중심으로- (Effects of Deposition Parameters on TiN Film by Plasma Assisted Chemical Vapor Deposition(II) -Influence of TiCl4, N2 inlet Fraction on the TiN Deposition-)

  • 이병호;신영식;김문일
    • 열처리공학회지
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    • 제2권4호
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    • pp.11-18
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    • 1989
  • To investigate the influence of $TiCl_4$, $N_2$ inlet fraction on the TiN layer, TiN film was deposited onto the STC3 and STD11 steel from gas mixtures of $TiCl_4/N_2/H_2$ by the radio frequency plasma assisted chemical vapor deposition. The films were deposited at various $TiCl_4$, $N_2$ inlet fractions. The results showed that the film thickness was increased with $TiCl_4$ inlet fraction. However, while the thickness was increased with $N_4$ inlet fraction under 0.4 the thickness was decreased with increasing $N_2$ inlet fraction over 0.4. The density of deposited films was varied as $TiCl_4$, $N_2$ inlet fraction and its maximum value was about $5.6g/cm^3$. The contents of chlorine were increased with increasing $TiCl_4$ inlet fraction and nearly constant with increasing $N_2$ inlet fraction.

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