한국정보디스플레이학회:학술대회논문집
- 2002.08a
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- Pages.662-665
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- 2002
The Relation between Emission Properties and Growth of Carbon nanotubes with dc bias by RF Plasma Enhanced Chemical Vapor Deposition
- Choi, Sun-Hong (Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University) ;
- Han, Jae-Hee (Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University) ;
- Lee, Tae-Young (Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University) ;
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Yoo, Ji-Beom
(Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University)
;
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Park, Chong-Yun
(Center for Nanotubes and Nanostructured Composites, Sungkyunkwan University)
;
- Yi, Whi-Kun (Materials and Devices lab, Samsung Advanced Institute of Technology) ;
- Yu, Se-Gi (Materials and Devices lab, Samsung Advanced Institute of Technology) ;
- Jung, Tae-Won (Materials and Devices lab, Samsung Advanced Institute of Technology) ;
- Lee, Jung-Hee (Materials and Devices lab, Samsung Advanced Institute of Technology) ;
- Kim, Jong-Min (Materials and Devices lab, Samsung Advanced Institute of Technology)
- Published : 2002.08.21
Abstract
The growth of carbon nanotubes (CNTs) was carried out using ratio frequency plasma enhanced chemical vapor deposition (rf PECVD) system equipped with dc bias for the directional growth. Acetylene and ammonia gas were used as the carbon source and a catalyst. The relation between gas flow rate and dc bias on the growth of CNTs was investigated. We studied the relation between emission properties and the directionality of CNTs grown under different dc bias voltage.
Keywords