• 제목/요약/키워드: plasma frequency

검색결과 855건 처리시간 0.032초

레이저 용접시 용접결함의 실시간 모니터링법 개발에 관한 연구 (Fundamental Study on the Weld Defects and Its Real-time Monitoring Method)

  • 김종도
    • Journal of Welding and Joining
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    • 제20권1호
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    • pp.26-33
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    • 2002
  • This study was undertaken to obtain the fundamental knowledges on the weld deflects and it's realtime monitoring method. The paper describes the results of high speed photography, acoustic emission (AE) detection and plasma light emission (LE) measurements during $CO_2$ laser welding of STS 304 stainless steel and A5083 aluminum alloy in different welding condition. The characteristic frequencies of plasma and keyhole fluctuations at different welding speed and shield gases were measured and compared with the results of Fourier analyses of temporal AE and LE spectra, and they had considerably good agreement with keyhole and plasma fluctuation. Namely, the low frequency peaks of AE and LE shifted to higher frequency range with the welding speed increase, and leer the argon shield gas it was higher than that in helium and nitrogen gases. The low frequencies dominating in fluctuation spectra of LE probably reflect keyhole opening instability. It is possible to monitor the weld bead deflects by analyzing the acoustic and/or plasma light emission signals.

플라즈마 합성제트를 이용한 사각 실린더 유동의 제어 (CONTROL OF SQUARE CYLINDER FLOW USING PLASMA SYNTHETIC JETS)

  • 김동주;김경진
    • 한국전산유체공학회지
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    • 제17권2호
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    • pp.85-92
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    • 2012
  • Flows over a square cylinder with and without plasma actuation are numerically investigated to see whether plasma actuation can effectively modify vortex shedding from the cylinder and reduce the drag and lift fluctuations. In this study, a plasma synthetic jet actuator is mounted on the rear side of cylinder as a means of direct-wake control. The effect of plasma actuation is considered by adding a momentum forcing term in the Navier-Stokes equations. Results show that the reduction of mean drag and lift fluctuations is obtained for both steady and unsteady actuation. However, the steady actuation is better than the unsteady one in terms of mean drag as well as drag fluctuations. With the strong steady actuation considered, the interaction of two separating shear layers from rear corners is effectively weakened due to the interference of synthetic jets. It results in a merging of synthetic-jet and shear-layer vortices and the increase of vortex shedding frequency. On the other hand, the unsteady actuation generates pulsating synthetic jets in the near wake, but it does not change the vortex shedding frequency for the actuation frequencies considered in this study.

A Two-dimensional Steady State Simulation Study on the Radio Frequency Inductively Coupled Argon Plasma

  • Lee, Ho-Jun;Kim, Dong-Hyun;Park, Chung-Hoo
    • KIEE International Transactions on Electrophysics and Applications
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    • 제2C권5호
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    • pp.246-252
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    • 2002
  • Two-dimensional steady state simulations of planar type radio frequency inductively coupled plasma (RFICP) have been performed. The characteristics of RFICP were investigated in terms of power transfer efficiency, equivalent circuit analysis, spatial distribution of plasma density and electron temperature. Plasma density and electron temperature were determined from the equations of ambipolar diffusion and energy conservation. Joule heating, ionization, excitation and elastic collision loss were included as the source terms of the electron energy equation. The electromagnetic field was calculated from the vector potential formulation of ampere's law. The peak electron temperature decreases from about 4eV to 2eV as pressure increases from 5 mTorr to 100 mTorr. The peak density increases with increasing pressure. Electron temperatures at the center of the chamber are almost independent of input power and electron densities linearly increase with power level. The results agree well with theoretical analysis and experimental results. A single turn, edge feeding antenna configuration shows better density uniformity than a four-turn antenna system at relatively low pressure conditions. The thickness of the dielectric window should be minimized to reduce power loss. The equivalent resistance of the system increases with both power and pressure, which reflects the improvement of power transfer efficiency.

Empirical Modeling of the Global Distribution of Magnetosonic Waves with Ambient Plasma Environment using Van Allen Probes

  • Kim, Kyung-Chan
    • Journal of Astronomy and Space Sciences
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    • 제39권1호
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    • pp.11-22
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    • 2022
  • It is suggested that magnetosonic waves (also known as equatorial noise) can scatter radiation belt electrons in the Earth's magnetosphere. Therefore, it is important to understand the global distribution of these waves between the proton cyclotron frequency and the lower hybrid resonance frequency. In this study, we developed an empirical model for estimating the global distribution of magnetosonic wave amplitudes and wave normal angles. The model is based on the entire mission period (approximately 2012-2019) of observations of Van Allen Probes A and B as a function of the distance from the Earth (denoted by L*), magnetic local time (MLT), magnetic latitude (λ), and geomagnetic activity (denoted by the Kp index). In previous studies the wave distribution inside and outside the plasmasphere were separately investigated and modeled. Our model, on the other hand, identifies the wave distribution along with the ambient plasma environment-defined by the ratio of the plasma frequency (fpe) to the electron cyclotron frequency (fce)-without separately determining the wave distribution according to the plasmapause location. The model results show that, as Kp increases, the dayside wave amplitude in the equatorial region intensifies. It thereby propagates the intense region towards the wider MLT and inward to L* < 4. In contrast, the fpe/fce ratio decreases with increasing Kp for all regions. Nevertheless, the decreasing aspect differs between regions above and below L* = 4. This finding implies that the particle energy and pitch angle that magnetosonic waves can effectively scatter vary depending on the locations and geomagnetic activity. Our model agrees with the statistically observed wave distribution and ambient plasma environment with a coefficient of determination of > 0.9. The model is valid in all MLTs, 2 ≤ L* < 6, |λ| < 20°, and Kp ≤ 6.

Simulation of Inductively Coupled $Ar/O_2$ Plasma; Effects of Operating Conditions on Plasma Properties and Uniformity of Atomic Oxygen

  • Park, Seung-Kyu;Kim, Jin-Bae;Kim, Heon-Chang
    • 반도체디스플레이기술학회지
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    • 제8권4호
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    • pp.59-63
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    • 2009
  • This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.

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Effect of RF Bias on Plasma Parameters and Electron Energy Distribution in RF Biased Inductively Coupled Plasma

  • Lee, Hyo-Chang;Chung, Chin-Wook
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.492-492
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    • 2012
  • RF biased inductively coupled plasma (ICP) has been widely used in various semiconductor etching processes and laboratory plasma researches. However, almost researches for the RF bias have been focused on the controls of dc self-bias voltages, even though the RF bias can change plasma parameters, such as electron temperature, plasma density, electron energy distribution (EED), and their spatial distributions. In this study, we report on the effect of the RF bias on the plasma parameters and the EEDs with various external parameters, such the RF bias power, the ICP power, the gas pressure, the gas mixture, and the frequency of RF bias. Our study shows the correlation between the RF bias and the plasma parameters and gives a crucial key for the understanding of collisionless electron heating mechanism in the RF biased ICP.

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Nano-CMOSFET를 위한 플라즈마-질화막의 초기 산화막 성장방법에 따른 소자 특성과 저주파 잡음 특성 분석 (Dependence of Low-frequency Noise and Device Characteristics on Initial Oxidation Method of Plasma-nitride Oxide for Nano-scale CMOSFET)

  • 주한수;한인식;구태규;유옥상;최원호;최명규;이가원;이희덕
    • 한국전기전자재료학회논문지
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    • 제20권1호
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    • pp.1-7
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    • 2007
  • In this paper, two kinds of initial oxidation methods i.e., SLTO(Slow Low Temperature Oxidation: $700^{\circ}C$) and RTO(Rapid Thermal Oxidation: $850^{\circ}C$) are applied prior to the plasma nitridation for ultra thin oxide of RPNO (Remote Plasma Nitrided Oxide). It is observed that SLTO has superior characteristics to RTO such as lower SS(Sub-threshold Slope) and improved Ion-Ioff characteristics. Low frequency noise characteristics of SLTO also showed better than RTO both in linear and saturation regime. It is shown that flicker noise is dominated by carrier number fluctuation in the channel region. Therefore, SLTO is promising for nano-scale CMOS technology with ultra thin gate oxide.

고주파 유도방전 플라즈마의 푸로우브법에 의한 계측 (A Measurements of Radio-Frequency Induction Discharge Plasma using probe method)

  • 박성근;박상윤;하장호;박원주;이광식;이동인
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 E
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    • pp.1657-1659
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    • 1997
  • Electron temperature and electron density were measured in a radio-frequency inductively coupled plasma (RFICP) using a probe measurements. Measurement was conducted in an argon discharge for pressures from 10 [mTorr] to 40 [mTorr] and input rf power from 100 [W] to 800 [W], Ar flow rate from 5 [sccm] to 30 [sccm], Spatial distribution electron temperature and electron density were measured for discharge with same aspect ratio (R/L=2). Electron temperature and electron density were discovered depending on both pressure and power, Ar flow rate. Electron density was increased with increasing input power and in creasing pressure, increasing Ar flow rate. Radial distribution of the electron density was peaked in the plasma center. Normal distribution of the electron density was peaked in the center between quartz plate and substrate. From these results, We found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

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고주파 유도결합 플라즈마의 전자에너지 분포함수 특성에 관한 연구 (A Study on the characteristics of Electron Energy Distribution function of the Radio-Frequency Inductively Coupled Plasma)

  • 황동원;하장호;전용우;최상태;이광식;박원주;이동인
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 1998년도 학술발표회논문집
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    • pp.131-133
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    • 1998
  • Electron temperature, electron density and electron energy distribution function were measured in Radio-Frequency Inductively Coupled Plasma(RFICP) using a probe method. Measurements were conducted in argon discharge for pressure from 10 mTorr to 40 mTorr and input rF power from 100W to 600W and flow rate from 3 sccm to 12 sccm. Spatial distribution of electron temperature, electron density and electron energy distribution function were measured for discharge with same aspect ratio (R/L=2). Electron temperature was found to depend on pressure, but only weakly on power. Electron density and electron energy distribution function strongly depended on both pressure and power. Electron density and electron energy distribution function increased with increasing flow rate. Radial distribution of the electron density and electron energy distribution function were peaked in the plasma center. Normal distribution of the electron density, electron energy distribution function were peaked in the center between quartz plate and substrate. These results were compared to a simple model of ICP, finally, we found out the generation mechanism of Radio-Frequency Inductively Coupled Plasma.

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Endpoint Detection in Semiconductor Etch Process Using OPM Sensor

  • Arshad, Zeeshan;Choi, Somang;Jang, Boen;Hong, Sang Jeen
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.237.1-237.1
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    • 2014
  • Etching is one of the most important steps in semiconductor manufacturing. In etch process control a critical task is to stop the etch process when the layer to be etched has been removed. If the etch process is allowed to continue beyond this time, the material gets over-etched and the lower layer is partially removed. On the other hand if the etch process is stopped too early, part of the layer to be etched still remains, called under-etched. Endpoint detection (EPD) is used to detect the most accurate time to stop the etch process in order to avoid over or under etch. The goal of this research is to develop a hardware and software system for EPD. The hardware consists of an Optical Plasma Monitor (OPM) sensor which is used to continuously monitor the plasma optical emission intensity during the etch process. The OPM software was developed to acquire and analyze the data to perform EPD. Our EPD algorithm is based on the following theory. As the etch process starts the plasma generated in the vacuum is added with the by-products from the etch reactions on the layer being etched. As the endpoint reaches and the layer gets completely removed the plasma constituents change gradually changing the optical intensity of the plasma. Although the change in optical intensity is not apparent, the difference in the plasma constituents when the endpoint has reached leaves a unique signature in the data gathered. Though not detectable in time domain, this signature could be obscured in the frequency spectrum of the data. By filtering and analysis of the changes in the frequency spectrum before and after the endpoint we could extract this signature. In order to do that, first, the EPD algorithm converts the time series signal into frequency domain. Next the noise in the frequency spectrum is removed to look for the useful frequency constituents of the data. Once these useful frequencies have been selected, they are monitored continuously in time and using a sub-algorithm the endpoint is detected when significant changes are observed in those signals. The experiment consisted of three kinds of etch processes; ashing, SiO2 on Si etch and metal on Si etch to develop and evaluate the EPD system.

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