Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Simulation of Inductively Coupled $Ar/O_2$ Plasma; Effects of Operating Conditions on Plasma Properties and Uniformity of Atomic Oxygen

  • Park, Seung-Kyu (Department of Chemical Engineering, Hoseo University) ;
  • Kim, Jin-Bae (Department of Chemical Engineering, Hoseo University) ;
  • Kim, Heon-Chang (Department of Chemical Engineering, Hoseo University)
  • Published : 2009.12.31
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Abstract

This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.

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