• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2006.10a
• /
• pp.511-512
• /
• 2006

• Proceedings of the Korean Vacuum Society Conference
• /
• 1995.06a
• /
• pp.24-24
• /
• 1995

• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.10a
• /
• pp.192.1-192
• /
• 2000

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2005.05a
• /
• pp.230-230
• /
• 2005

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1996.11a
• /
• pp.78-78
• /
• 1996

• Proceedings of the Korean Vacuum Society Conference
• /
• 2007.08a
• /
• pp.113-113
• /
• 2007

• Journal of the Korean Solar Energy Society
• /
• v.33 no.2
• /
• pp.11-17
• /
• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.50 no.2
• /
• pp.49-56
• /
• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.05a
• /
• pp.42-45
• /
• 1992

The poly silicon thin films were prepared by solid phase crystallization at 600$^{\circ}C$ of amorphous silicon films deposited on Corning 7059 glass and (100) silicon wafer with thermally grown SiO$_2$substrate by plasma enhanced chemical vapor deposition with varying rf power, deposition temperature, total flow rate. Crystallization time, microstructure, absorption coefficients were investigated by RAMAN, XRD analysis and UV transmittance measurement. Crystallization time of amorphous silicon films was increased with increasing rf power, decreasing deposition temperature and decreasing total flow rate.

• Carbon letters
• /
• v.12 no.4
• /
• pp.185-193
• /
• 2011

Carbon nanotubes (CNTs) have developed into one of the most competitively researched nano-materials of this decade because of their structural uniqueness and excellent physical properties such as nanoscale one dimensionality, high aspect ratio, high mechanical strength, thermal conductivity and excellent electrical conductivity. Mass production and structure control of CNTs are key factors for a feasible CNT industry. Water and ethanol vapor enhance the catalytic activity for massive growth of vertically aligned CNTs. A shower system for gas flow improves the growth of vertically aligned single walled CNTs (SWCNTs) by controlling the gas flow direction. Delivery of gases from the top of the nanotubes enables direct and precise supply of carbon source and water vapor to the catalysts. High quality vertically aligned SWCNTs synthesized using plasma enhance the chemical vapor deposition technique on substrate with suitable metal catalyst particles. This review provides an introduction to the concept of the growth of vertically aligned SWCNTs and covers advanced topics on the controlled synthesis of vertically aligned SWCNTs.