• 방송공학회논문지
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• 제19권6호
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• pp.942-956
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• 2014

본 논문은 단안의 RGB 카메라를 이용하는 실시간 손 추적 방법을 제안한다. 손은 높은 degrees of freedom을 가지고 있기 때문에 손 추적은 높은 모호성을 가지고 있다. 따라서 제안하는 방법에서는 손 추적의 모호성을 줄이기 위해서 단계별 손 추적 전략을 채택하였다. 제안하는 방법의 추적 과정은 손바닥 포즈 추적, 손가락 yaw 움직임 추적, 그리고 손가락 pitch 움직임 추적, 세 단계로 구성되어 있으며, 각 단계는 순서대로 수행된다. 제안하는 방법은 손은 평면으로 간주할 수 있다고 가정하고, 평면 손 모델을 이용한다. 평면 손 모델은 손 모델을 현재의 사용자 손 모양에 맞춰서 변경하는 손 모델 재생성을 가능하게 하는데, 이는 제안하는 방법의 강건성과 정확도를 증가시킨다. 그리고 제안하는 방법은 실시간 연산이 가능하고 GPU 기반 연산을 요구하지 않기 때문에, Google Glass와 같은 모바일 장비를 포함한 다양한 환경에 적용가능하다. 본 논문은 다양한 실험을 통해서 제안하는 방법의 성능과 효용성을 입증한다.

• Current Photovoltaic Research
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• 제8권1호
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• pp.27-32
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• 2020

CuS thin films were deposited on glass substrates at room temperature by RF magnetron sputtering. The structural and optical properties of CuS thin films grown by varying RF-power from 40 W to 100 W were studied. From the XRD analysis, we confirmed hexagonal crystal structures grown in the preferred orientation of the (110) plane in all CuS thin films, and the intensity of the main diffraction peak increased in proportion to the increase of RF-power. In the case of CuS thin film deposited at 40W, small-sized particles formed a thin and dense surface morphology with narrow pore spacing, relatively. As the power increased, the grain size and grain boundary spacing increased sequentially. The peaks for the binding energy of Cu 2p_3/2 and Cu 2p_1/2 were determined at 932.1 eV and 952.0 eV, respectively. The difference in binding energy for the Cu²⁺ states was the same at 19.9 eV regardless of process parameters. The transmittance and band gap energy in the visible region tended to decrease with increasing sputtering powers.

• 한국재료학회지
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• 제23권8호
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• pp.435-440
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• 2013

Transparent and conducting thin films of Ta-doped $SnO_2$ were fabricated on a glass substrate by a pulse laser deposition(PLD) method. The structural, optical, and electrical properties of these films were investigated as a function of doping level, oxygen partial pressure, substrate temperature, and film thickness. XRD results revealed that all the deposited films were polycrystalline and the intensity of the (211) plane of $SnO_2$ decreased with an increase of Ta content. However, the orientation of the films changed from (211) to (110) with an increase in oxygen partial pressure (40 to 100 mTorr) and substrate temperature. The crystallinity of the films also increased with the substrate temperature. The electrical resistivity measurements showed that the resistivity of the films decreased with an increase in Ta doping, which exhibited the lowest resistivity (${\rho}{\sim}1.1{\times}10^{-3}{\Omega}{\cdot}cm$) for 10 wt% Ta-doped $SnO_2$ film, and then increased further. However, the resistivity continuously decreased with the oxygen partial pressure and substrate temperature. The optical bandgap of the 10 wt% Ta-doped $SnO_2$ film increased (3.67 to 3.78 eV) with an increase in film thickness from 100-700 nm, and the figure of merit revealed an increasing trend with the film thickness.

• 한국표면공학회지
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• 제51권2호
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• Journal of Biosystems Engineering
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• 제36권1호
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• pp.23-32
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• 2011

In this work, the finite element method was used to investigate the shifts of resonance frequencies and quality factor of whispering-gallery-mode (WGM) for an opto-fluidic ring resonator (OFRR) biosensor. To describe the near-field radiation transfer, the time-domain Maxwell's equations were employed and solved by using the in-plane TE wave application mode of the COMSOL Multiphysics with RF module. The OFRR biosensor model under current study includes a glass capillary with a diameter of 100 mm and wall thickness of 3.0 mm. The resonance energy spectrum curves in the wavelength range from 1545 nm to 1560 nm were examined under different biosensing conditions. We mainly studied the sensitivity of resonance shifts affected by changes in the effective thickness of the sensor resonator ring with a 3.0 mm thick wall, as well as changes in the refractive index (RI) of the medium inside ring resonators with both 2.5 mm and 3.0 mm thick walls. In the bulk RI detection, a sensitivity of 23.1 nm/refractive index units (RIU) is achieved for a 2.5 mm thick ring. In small molecule detection, a sensitivity of 26.4 pm/nm is achieved with a maximum Q-factor of $6.3{\times}10^3$. These results compare favorably with those obtained by other researchers.

• 대한방사선기술학회지:방사선기술과학
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• 제32권3호
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• pp.307-312
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• 2009

CT 검사에서 수정체 차폐용 비스무트(bismuth)를 사용하여 수정체 선량의 감소효과를 유리선량계로 측정하여 비스무트 차폐효과 및 영상을 평가하였다. 안구 및 두부 CT 검사에서 차폐용 비스무트를 사용하여 수정체 선량의 감소와 차폐 효과를 평가하기 위해 인체모형 팬텀으로 유리선량계를 이용하여 수정체 선량을 평가하였다. 유리선량계를 이용하여 비스무트를 사용하기 전의 평균 선량은 21.54 mGy이었고, 사용 후의 선량은 10.46 mGy로 51.3%의 선량 감소효과가 있다. 차폐용 비스무트를 사용한 안구 64 MDCT 촬영에서 선량감소 효과가 있어 수정체를 포함한 안구 CT 스캔에서는 비스무트를 사용하여 검사하도록 권고한다.

• Bulletin of the Korean Chemical Society
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• 제31권1호
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• pp.112-115
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• 2010

Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity ($\rho$), carrier concentration (n), and hall mobility ($\mu$) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity ($8.5 \times 10^{-2}$ ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

• KIEAE Journal
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• 제6권2호
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• pp.67-74
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• 2006

As sustainable design technologies, advanced daylighting systems with lightshelves have been developed and are currently under monitoring the daylighting performance. This study aims to evaluate the comparative daylighting performance of sloped lightshelf and conventional glazing window with mock-up model, reconstructed as a prototype of Korean office building, sized $12.0m{\times}7.3m{\times}3.7m$ ($w{\times}d{\times}h$) and $1.8m{\times}4.8m$($w{\times}h$) for the south facing side-window was installed on the rooftop of engineering building, Kyung Hee University in Korea. It has an identical configuration of reference room and the test room. For the test room, the sloped type lightshelf system was designed as 10mm transparency sheet glass, tilt angle degree $29^{\circ}$, and total sized 1.28m (interior length 0.88m, exterior length 0.49m). It consisted of daylighting collector, entrance glazing and reflector. To assess daylighting performance, the totally 37 measuring points for illuminance and 2 view points of luminance were monitored in every 30 minutes from 12:00 to 15:00. For the detailed analysis, photometric sensors of each room were installed at work-plane (8 points), wall (7 points), ceiling (3points), and exterior horizontal illuminance (1 point). Luminance of window, rare of the room was measured under clear sky. It is to be monitored by Agilent data logger, photometric sensor Li-cor and the Radiant Imaging ProMetric 1400. Comparisons with a light factor, increase-decrease ratio, uniformity, and luminance are discussed.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.93-96
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• 2009

The Al-doped ZnO (AZO) films were deposited on a glass substrate by RF magnetron sputtering in pure Ar and $Ar+H_2$ gas ambient at temperature of $100^{\circ}C$ and annealed in hydrogen ambient at the temperature range from 100 to 300 $^{\circ}C$, respectively. It was found that either the addition of hydrogen to the sputtering gas or the annealing treatment effectively reduced the resistivity of the AZO films. When the AZO films were annealed at the temperature of 300 $^{\circ}C$ for lhr in a hydrogen atmosphere, the resistivity decreased from $2.60{\times}10^{-3}\;{\Omega}cm$ to $8.42{\times}l0^{-4}\;{\Omega}cm$ for the film deposited in pure Ar gas ambient. Under the same annealing conditions of temperature and hydrogen ambient, the resistivity of AZO films deposited in the $Ar+H_2$ gas mixture decreased from $8.22{\times}l0^{-4}\;{\Omega}cm$ to $4.25{\times}l0^{-4}\;{\Omega}cm$. The lowest resistivity of $4.25{\times}l0^{-4}\;{\Omega}cm$ was obtained by adding hydrogen gas to the deposition and annealing process. X-ray diffraction (XRD) pattern of all films showed preferable growth orientation of (002) plane. The average transmittance is above 85 % and in the range of 400-1000 nm for all films.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.