• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.116-122
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• 2004

A micromachined self-exited piezoelectric cantilever has been fabricated using PZT(52/48) thin film. For the application to biosensor using antigen-antibody interaction, electromechanical properties such as resonant frequency and quality factor of micromachined piezoelectric cantilever were important factors. Electromechanical properties and resonant behaviors of microfabricated cantilever were simulated by FEA (Finite Element Analysis) using Coventorware$^{TM}$2003. And these characterization of microcantilever were measured by using LDV(Laser Doppler Vibrometer) to compare with FEA data. We present the resonant frequency shift of micromachined piezoelectric cantilevers due to combination of mass loading and change of spring constant by gold deposition. Experimental mass sensitivities of microcantilever were characterized by Au deposition on the backside of microcantilever. Mass sensitivities with $100{\times}300$ ${\mu}{\textrm}{m}$ dimension cantilever from simulation and experimental were 5.56 Hz/ng and 16.8 Hz/ng respectively.y.

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.297-302
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• 2014

$La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrode thin films with a resistivity of ~ 1,600 ${\mu}{\Omega}cm$ were grown on c-$Al_2O_3$ (0001) substrate. $ZnSnO_3$ (ZTO) thin films with different thicknesses were directly grown on LSCO/c-$Al_2O_3$ (0001) substrates at a substrate temperature that ranged from 550 to $750^{\circ}C$ using Pulsed Laser Deposition (PLD). The secondary phase $Zn_2SnO_4$ occurred during the growth of ZTO films and it became more significant with further increasing substrate temperature. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization and coercive field of 0.05 ${\mu}C/cm^2$ and 48 kV/cm, respectively, were obtained in the ZTO film grown at $700^{\circ}C$ in 200 mTorr.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.366-367
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• 2006

Different orientated SBN thin films were deposited by Ion Beam Sputtering, and electric properties were measured on each orientation. Ferroelectric $Sr_xBa_{1-x}Nb_2O_6$(SBN) has excellent electro-optic, photo-refractive, piezoelectric, pyroelectric properties. SBN thin film has been deposited by various method, of sol-gel, PLD, CVD, sputtering, etc.. To avoid lead pollution of Pb-system perovskite ferroelectric materials. SBN thin films were fabricated for pyroelectric IR sensor. Using the ceramic target of the same composition and Pt(100)/$TiO_2/SiO-2$/Si(100) substrate, crystallization and orientation behavior as well as electric properties of the films were examined. Seed layer and thin films thickness was controlled to observe the effect on preferred orientation. We measured I-V, C-V, P-E hysteresis to characterize electric-properties on each orientations.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1190-1192
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• 1995

Poly(vinylidene fluoride)(PVDF) is one of the most studied polymers in the latest date. The interest in PVDF lies in its remarkable piezoelectric and pyroelectric properties. Also, PVDF has at least four known crystalline structures(; they are referred to as the ${\alpha},\;{\beta},\;{\gamma}\;and\;{\alpha}_p$ phase or forms II, I, III and $IV_p$). In this study, the manufactured PVDF thin film through vapor deposition method had form II(; the glass at $70^{\circ}C$). This thin film was investigated by x-ray diffraction(XRD), Fourier Transform Infrared(FT-IR) spectroscopy and Differential Thermal Analysis(DTA). XRD and FT-IR indicate crystallization forms from the glass at $70^{\circ}C$ into form II.

• 한국진공학회지
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• 제17권5호
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• pp.448-454
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• 2008

본 논문의 목적은 진공증착법을 이용한 $\beta$-PVDF($\beta$-Polyvinylidene fluoride) 유기 박막의 제조와 제조된 유기 박막의 압전 특성을 연구하는데 있다. 진공 증착은 증발원 온도 $270^{\circ}C$, 인가 전계 142.4kV/cm, 진공도 $2.0{\times}10^{-5}Torr$에서 실시하였다. 기판 온도의 증가에 따라서 $\beta$형태의 PVDF 함유량은 72%에서 95.5%로 증가함을 알 수 있었다. 힘 모우멘트를 $1.372{\times}10^{-5}N{\cdot}m$에서 $39.2{\times}10^{-5}N{\cdot}m$로 변화시킨 응답특성의 경우, 출력전압은 1.39V에서 7.04V로 증가하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.121-124
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• 1997

Emergence of advanced materials has been realized by the great demands for sophisticated state devices in high technology industry. It is the ear of speedy evolution of science and technology, in particular, materials processing technology, which enables us to synthesize any materials with respect to its purity and its perfection of crystal structure and shape (form) that have, heretofore not been available. The availability of ultra pure, fine raw materials, single crystals and thick/thin film materials has been largely responsible for such startling progresses that have been made in the realization of unforeseen, functional devices for high technology industry. Of the functional devices such as passive as active devices, non-silicon devices are mostly passive. Piezoelectric, electro-optic, magneto-optic devices, etc. are some of the examples. In this paper, magneto-optic materials for Faraday device, which is little known, are reviewed including its processing toward practical applications.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.947-952
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• 2001

In this paper, a wideband SAW convolver using a parabolic horn waveguide was designed and its characteristics were investigated. The convolver was made with parabolic horn waveguide at compression ratio 9:1 for reducing propagation loss and for improving convolution efficiency between two input IDTs of center frequency 193.78 ㎒. The SAW convolver utilizing acoustic nonlinearities of piezoelectric material demonstrated that it can provide large S/N ratio and can be use for programmable matched filter(PMF) in spread spectrum communication system.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.923-929
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• 2008

On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

• 대한전자공학회논문지SD
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• 제43권4호
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• pp.1-7
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• 2006

RF 마그네트론 스퍼터링 방법을 이용하여 $Ar/N_2$ 가스비와 기판 온도 변화에 따른 AlN 박막의 배향성과 표면 거칠기 그리고 압전 특성의 변화를 조사하였다. 특히, $Ar/N_2$=10/10 (sccm), 기판 온도 $400^{\circ}C$ 일 때 가장 우수한 (002) 배향성을 얻을 수 있었다. AFM 을 이용하여 표면 거칠기를 분석한 결과, 기판 온도 $400^{\circ}C$ 인 경우 $Ar/N_2$ 가스비의 변화에 대해서는 $N_2$의 분압비가 증가할수록 표면 거칠기 특성이 좋아지는 것으로 나타났으며 $Ar/N_2$=0/20 (sccm) 일 때 2.1 nm 로 가장 작은 값을 나타내었다. $Ar/N_2$=10/10 (sccm) 인 조건에서 기판 온도 변화에 대한 표면 거칠기 특성은 기판 온도가 상온에서 $300^{\circ}C$ 로 증가함에 따라 향상되는 경향을 보였으며, $300^{\circ}C$ 에서 3.036 nm 로 최소값을 나타낸 후, 기판 온도가 $300^{\circ}C$ 이상으로 상승하면 표면 거칠기는 다시 열악해지는 것을 확인할 수 있었다. Pneumatic probe 방법을 이용하여 압전 특성을 측정한 결과, $Ar/N_2$=10/10 (sccm), 기판 온도 $400^{\circ}C$ 일 때 Piezoelectric constant ($d_{33}$)=6.01 pC/N 이라는 가장 우수한 값을 나타내었으며, 이는 AlN 박막이 가장 좋은 (002) 배향성을 갖는 조건과 일치하는 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.358-361
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• 2002

체적파 박막형 공진기 (FBAR: Film Bulk Acoustic wave Resonator)소자를 제조하여, 박막의 c축 우선 배향성을 조절하는 것이 FBAR 소자 특성을 확인하였다. 본 연구에서는 MEMS 공정에 의해 Membrane 구조의 FBAR(Film Bulk Acoustic wave Resonator) 소자를 구현하고자 하였다. 이를 위해 Si 기판을 Back-etching 하여 membrane 구조를 제작하였고 압전층으로 ZnO을 Sputtering 공정에 의해 증착 후, 공정 조건에 따른 우선 배향성을 관찰하였다.