Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Physical Properties of ITO/PVDF as a function of Oxygen Partial Pressure

산소 분압 조절에 따른 ITO/PVDF 박막 물성 조절 연구

  • 이상엽 (한국과학기술연구원 재료기술연구본부) ;
  • 김지환 (한국과학기술연구원 재료기술연구본부) ;
  • 박동희 (한국과학기술연구원 재료기술연구본부) ;
  • 변동진 (고려대학교 재료공학과) ;
  • 최원국 (한국과학기술연구원 재료기술연구본부)
  • Published : 2008.10.01
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Abstract

On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

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References

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