• Proceedings of the Zoological Society Korea Conference
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• 1998.10b
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• pp.214-214
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• 1998

No Abstract, See Full Text

• Korea Petroleum Association Journal
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• no.11 s.215
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• pp.104-105
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• 1999

본 자료는 지난 10월 22일 한국석유공사에서 패셔라키 박사가 강연한 「국제석유시황 설명회」의 내용중 발췌ㆍ편집한 것이다. <편집자 주>

• Bulletin of the Korean Chemical Society
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• v.9 no.6
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• pp.411-411
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• 1988

• Bulletin of the Korean Chemical Society
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• v.11 no.6
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• pp.485-486
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• 1990

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.890-898
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• 2001

4H-SiC(silicon carbide) MESFET large signal model was studied using modified Materka-Kacprzak large signal MESFET model. 4H-SiC MESFET device simulation have been conducted by Silvaco\`s 2D device simulator, ATLAS. The result is modeled using modified Materka large signal model. simulation and modeling results are -8 V pinch off voltage, under V$\_$GS/=0 V, V$\_$DS/=25 V conditions, I$\_$DSS/=270 mA/mm, G$\_$m/=52.8 ms/mm were obtained. Through the power simulation 2 GHz, at the bias of V$\_$GS/-4 V md V$\_$DS/=25 V, 10 dB Gain, 34 dBm (1dB compression point)output porter, 7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.7.6 W/mm power density, 37% PAE(power added efficiency) were obtained.d.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.56-61
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• 2010

In this paper, high efficient power amplifier with dual band has been realized. Dual band power amplifier have used modify stub matching for single FET, center frequency 2.14GHz and 5.2GHz respectively. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Because the control of the all harmonic components is very difficult m dual-band, we have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Dual-band characteristics in the output has to balance. Two operating frequencies are chosen at 2.14 GHz and 5.2 GHz in this work. The measured results show that the output power of 28.56 dBm and 29 dBm was obtained at 2.14 GHz and 5.2 GHz, respectively. At this point, we have obtained the power-added efficiency (PAE) of 65.824 % and 69.86 % at two operation frequencies, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.12
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• pp.1313-1321
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• 2008

outphasing class-E power amplifier using composite right/left-handed transmission lines(CRLH-TL) is proposed at 2.4 GHz. The power combiner including CRLH-TL is designed to suppress the second and third harmonics to increase linearity and the output problem of the conventional outphasing amplifier is also solved by the proposed outphasing amplifier. So the P AE is improved. The measured maximum output power at the fundamental frequency shows 31.8 dBm, whereas the PAE shows 50 % with 14 dBm input power excited. The IMD3 is improved by 5 dB compared to that of conventional outphasing amplifier.

• Polymer(Korea)
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• v.26 no.1
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• pp.1-8
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• 2002

In this study, poly(arylene ether sulfone) (PAES) having thermal stability and excellent mechanical properties was synthesized to be useful for the matrix of anion exchange resin. $1^{\circ}$-Aminated poly(arylene ether sulfone) ($1^{\circ}$-APAES) was prepared by reduction reaction after lithiation of PAES. Then $3^{\circ}$-APAES was Prepared by alkylation of the amino group of $1^{\circ}$-APAES. The structures of PAES and APAESs were confirmed with FT-IR and $^1H-NMR$ spectroscopy. Also, thermal properties of the resins were characterized by DSC and TG analysis. The introduction of amine groups in PAES resulted in the increase of glass transition temperature and decrease of initial thermal degradation temperature. The ion exchange capacities of $1^{\circ}$-APAES and $1^{\circ}$-APAES were 1.19 and 1.45 meq/g, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.78-83
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• 2010

In this paper, a novel dual-band power amplifier using metamaterials has been realized with one RF GaN HEMT diffusion metal-oxide-semiconductor field effect transistor. The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. We have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 900 MHz and 2140 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 900 MHz and 2140 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) and IMD of 60.2 %, -23.17dBc and 67.3 %, -25.67dBc at two operation frequencies, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.1
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• pp.32-37
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• 2007

A DMB CMOS power amplifier (PA) with high efficiency and linearity is present. For this work, a 0.13-um standard CMOS process is employed and all components of the proposed PA are fully integrated into one chop including output matching network and adaptive bias control circuit. To improve the efficiency and linearity simultaneously, an adaptive bias control circuit is adopted along with second harmonic termination circuit at the drain node. The PA is shown a $P_{1dB}$ of 16.64 dBm, power added efficiency (PAE) of 38.31 %, and power gain of 24.64 dB, respectively. The third-order intermodulation (IMD3) and the fifth-order intermodulation (IMD5) have been -24.122 dBc and -37.156 dBc, respectively.