• Journal of radiological science and technology
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• v.41 no.1
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• pp.33-38
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• 2018

There are limits to check the lesion as inserting a breast implant patients. So the application of BSGI based on Nuclear Medicine examination has increased. In this study, therefore we confirmed the effect of the image applying to breast implants in Breast Specific Gamma Imaging. We utilized Dilon 6800 BSGI scanner and developed the phantom. The self-development phantom was a rectangular shape of $230{\times}190{\times}80mm$ size and had 5 spheres which consisted of diameters of 10, 13, 17, 22, 28 mm in central part. We injected $^{99m}TcO_4$ into the self-development phantom in the proportion of four to one and made each additional phantom filled with 0.9 % sodium chloride, silicon and paraffin. Each additional phantom was placed between detector and self-development phantom. Each image was acquired five times depending on the type and thickness of the additional phantom. Statistical analysis with SPSS ver.18 was applied. In the test of variation according to the thickness of all additional phantoms, as the phantoms which 0.9% sodium chloride, silicon and paraffin increased, the attenuation variation was higher(P<0.005). There was no significant difference in the attenuation variation and the quality of image for type of the additional phantom. Therefore, if the effect of the image applying to breast implants in Breast Specific Gamma Imaging is confirmed, the higher diagnostic value can be achieved.

• Advances in nano research
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• v.10 no.5
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Journal of Energy Engineering
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• v.22 no.4
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• pp.333-337
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• 2013

본 논문에서는 태양전지의 Ribbon 두께(A-type:0.2mm, B-type:0.25mm)에 따라 3가지 온도조건 ($-40{\sim}65^{\circ}C$, $-40{\sim}85^{\circ}C$, $-40{\sim}105^{\circ}C$)으로 열충격 시험을 수행하였다. 그 결과, A, B type 별 초기 평균효율은 15.2%로 같았다. 하지만, 열충격 시험(600 Cycle) 후 Condition 1에서 A-type 7.5%, B-type 7.7%, Condition 2에서는 8.6%, 13.2%를 나타내었다. Condition 3에서는 각각 11.6%, 19.9%의 감소율을 나타내었다. 열충격 시험 후 A-type보다 Ribbon두께가 두꺼운 B-type의 효율이 크게 감소하였다. 이는 A, B type 모두 이종재료 접합부의 금속간화합물(IMC)층이 형성되어 전기적 저항이 증대된 것으로 판단된다. 또한, B-type의 I-V 특성 곡선 및 EL을 분석한 결과, p-n층이 파괴되고, 병렬저항이 감소하여, 장기적 신뢰성에서 A-type 보다 더 취약한 것으로 나타났다. 향후 태양전지 Ribbon 형상에 따른 장기 신뢰성 특성에 대해 수치해석 및 시뮬레이션 분석이 수반되어야 할 것이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.376-379
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• 2016

In this paper, the efficiency improvement of the heterojunction with intrinsic thin layer (HIT) solar cells is obtained by optimization process of p-type a-SiC:H as emitter. The optoelectronic of p-type a-SiC:H layers including the optical band-gap and conductivity under the methane gas content variation is conducted in detail. A significant increase in the Jsc by $1mA/cm^2$ and Voc by 30 mV are attributed to enhanced photon-absorption due to broader band-gap of p-a-SiC:H and reduced band-offsets at p-side interface, respectively of HIT solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.366-366
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• 2010

Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, below Intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. Efficiency with variation of the concentration was grown by the a-Si p-type with increasing concentrations of Na, efficiency with increasing a-Si n-type of Nd Concentrations was not changed, was decreased rapidly when concentrations were decreased. Efficiency was increased when c-Si n-type of Nd concentration was increased, otherwise efficiency was decreased when concentration was decreased.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.55-59
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• 2020

Copper Oxide (CuO) films were deposited on the n-type silicon wafer by rf magnetron sputtering for heterojunction solar cells. And then the samples were treated as a function of the annealing temperature (300-600℃) in a vacuum. Their electrical, optical and structural properties of the fabricated heterojunction solar cells were then investigated and the power conversion efficiencies (PCE) of the fabricated p-type copper oxide/n-type Si heterojunction cells were measured using solar simulator. After being treated at temperature of 500℃, the solar cells with CuO film have PCE of 0.43%, Current density of 5.37mA/㎠, Fill Factor of 39.82%.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1407-1412
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• 2014

In order to improve spectrum sensitivity of photodiode for detection of the laser at 850 nm ~ 1000 nm of near-infrared wavelength band, this study has produced silicon-based fast film PIN photodiode and analyzed electrical and optical properties. The manufactured device is packaged in TO-18 type. The electrical properties of the dark currents both Anode 1 and Anode 2 have valued of approximately 0.055 nA for 5 V reverse bias, while the capacitance showed 19.5 pF at frequency range of 1 kHz and about 19.8 pF at the range of 200 kHz for 0 V. In addition, the rising time of output signal was verified to have fast response time of about 30 ns for 10 V. For the optical properties, the best spectrum sensitivity was 0.66 A/W for 880 nm, while it was relatively excellent value of 0.45 A/W for 1,000 nm.

• Journal of IKEEE
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• v.11 no.1 s.20
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• pp.54-60
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• 2007

In this study novel ESD protection device, namely, N/P-type Low Voltage Triggered SCR, has been proposed, for high speed I/O interface. Proposed device could lower high trigger voltage($\sim$20V) of conventional SCR and reduce latch-up phenomenon of protection device during the normal condition. In this Study, the proposed NPLVTSCR has been simulated using TMA MEDICI device simulator for electrical characteristic. Also the proposed device's test pattern was fabricated using 90nm TSMC's CMOS process and was measured electrical characteristic and robustness. In the result, NPLVTSCR has 3.2V $\sim$ 7.5V trigger voltage and 2.3V $\sim$ 3.2V holding voltage by changing PMOS gate length and it has about 2kV, 7.5A HBM ESD robustness(IEC61000-4-2).

• Journal of Sensor Science and Technology
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• v.3 no.3
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• pp.16-21
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• 1994

A 3-terminal pin-type photosensor with gate contrail is fabricated using standard silicon CMOS IC process. The photosensor of a $100{\mu}m{\times}120{\mu}m$ size has dark current less than 1nA and its breakdown voltage is -14V with a depletion capacitance 0.75 pF at -5V reverse bias. Responsivity at 0V gate voltage is 0.25A/W at $0.633{\mu}m$ wavelength, 0.19A/W at $0.805{\mu}m$. Responsivity increases with increasing gate voltage. The integrated circuit of photosensor and CMOS inverter shows $22K{\Omega}$ transimpedance and photocurrent of $90{\mu}A$ switchs the output state of digital inverter without additional amplifier.