Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.366-366
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- 2010
Efficiency of HIT through change of layer's doping concentration
- Pyeon, Jin-Ho (Sungkyunkwan University) ;
- Kim, Moo-Jung (Sungkyunkwan University) ;
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Yi, Jun-Sin
(Sungkyunkwan University)
- Published : 2010.06.16
Abstract
Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, below Intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. Efficiency with variation of the concentration was grown by the a-Si p-type with increasing concentrations of Na, efficiency with increasing a-Si n-type of Nd Concentrations was not changed, was decreased rapidly when concentrations were decreased. Efficiency was increased when c-Si n-type of Nd concentration was increased, otherwise efficiency was decreased when concentration was decreased.