• 전자공학회논문지D
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• 제36D권3호
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• pp.66-74
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• 1999

HMC(Hybrid Monte Carlo)시뮬레이션을 이용하여 InAlGaAs/InGaAs HBT의 비평형 고속전송을 해석하였고, 전송시간 및 차단주파수를 향상시키기 위하여 에미터-베이터 이종접합과 콜렉터 구조를 최적 설계 하였다. 시뮬레이션 결과, 에미터 조성경사영역에서 Al 몰비를 xf=1.0에서 xf=0.5로 변화시킬 경우 베이스 전송시간이τb=0.21ps로 가장 짧았다. 콜렉터 전송시간을 단축시킬 목적으로 콜렉터와 베이스 사이에 n\sup +\형 (콜렉터-Ⅰ), I형(콜렉터-Ⅱ), p형(콜렉터-Ⅲ), 콜렉터를 삽입하여 베이스-콜렉터 공간전하영역의 전계분포를 전자의 비평형고속전송을 유지하도록 설계하였다. 콜렉터-Ⅲ 구조에서는 전자의 음이온화된 억셉터가 콜렉터의 전계를 감소시킴으로써 전자가 Γ 밸리에서 먼 거리까지 전송을 가능하게 하여 가장 짧은 콜렉터 전송시간을 나타내었다. 결론적으로 가장 짧은 전송시간 τec는 Al 몰비가 xf=0.5인 에미터 구조와 콜렉터-Ⅲ에서 0.87psec이었고, 차단주파수 ft=183GHz를 나타내었다.

• 천문학회보
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• 제46권2호
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• pp.65.2-66
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• 2021

Observational studies of supernova (SN) feedback are limited. In our galaxy, most supernova remnants (SNRs) are located in the Galactic plane, so there is contamination from foreground/background sources. SNRs located in other galaxies are too far, so we cannot study them in detail. The Large Magellanic Cloud (LMC) is a unique place to study the SN feedback due to their proximity, which makes possible to study the structure of individual SNRs in some detail together with their environment. Recently, we carried out a systematic study of 13 LMC SNRs using [P II] (1.189 ㎛) and [Fe II] (1.257 ㎛) narrowband imaging with SIRIUS/IRSF, four SNRs (SN 1987A, N158A, N157B and N206), show [P II]/[Fe II] ratio much higher than the cosmic abundance. While the high ratio of SN 1987A could be due to enhanced abundance in SN ejecta, we do not have a clear explanation for the other cases. We investigate the [P II] knots found in SNRs N206, N157B and N158A, using optical spectra obtained last November with GMOS-S mounted on Gemini-South telescope. We detected several emission lines (e.g., H I, [O I], He I, [O III], [N II] and [S II]) that are present in all three SNRs, among other lines that are only found in some of them (e.g., [Ne III], [Fe III] and [Fe II]). Various line ratios are measured from the three SNRs, which indicate that the ratios of N157B tend to differ from those of other two SNRs. We will use the abundances of He and N (from the detection of [N II] and He I emission lines), together with velocity measurements to tell whether the origin of the [P II] knots are SN ejecta or CSM/ISM. For this purpose we have built a family of radiative shock with self-consistent pre-ionization using MAPPINGS 5.1.18, with shock velocities in the range of 100 to 475 km/s. We will compare the observed and modeled line fluxes for different depletion factors.

• 한국위성정보통신학회논문지
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• 제10권4호
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• pp.1-5
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• 2015

PPS 소자가 삽입된 부분웰 구조의 N형 실리콘 제어 정류기(NSCR_PPS) 소자에서 정전기 보호 성능의 향상을 위한 CPS 이온주입조건의 최적화에 대해 연구하였다. 종래의 NSCR 표준소자는 on-저항, 스냅백 홀딩 전압 및 열적 브레이크다운 전압이 너무 낮아 정전기 보호소자의 필요조건을 만족시키지 못해 적용이 어려웠으나, 본 연구에서 제안하는 CPS 이온주입과 부분웰 이온주입을 동시에 적용한 변형 설계된 소자의 경우 스냅백 홀딩 전압을 동작전압 이상으로 증가시킬 수 있는 향상된 정전기 보호성능을 나타내어 고전압 동작용 마이크로 칩의 정전기보호 소자로 적용 가능함을 확인하였다.

• 한국위성정보통신학회논문지
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• 제9권4호
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• pp.63-68
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• 2014

PPS 구조를 갖는 N형 실리콘 제어 정류기 소자에서 부분웰 구조가 정전기 보호 성능에 미치는 영향을 고찰하였다. 종래의 NSCR 표준소자는 온-상태 저항, 스냅백 홀딩 전압 및 열적 브레이크다운 전압이 너무 낮아 정전기 보호소자의 필요조건을 만족시키지 못해 적용이 어려웠으나, 본 연구에서 제안하는 부분웰 구조를 갖도록 변형 설계된 NSCR-PPS 소자는 안정한 정전기보호 성능을 나타내어 고전압 동작용 마이크로 칩의 정전기보호 소자로 적용 가능함을 확인하였다.

• 대한수학회지
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• 제48권2호
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• pp.397-420
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• 2011

In this paper we study the structure of closed weakly dense ideals in Privalov spaces $N^p$ (1 < p < $\infty$) of holomorphic functions on the disk $\mathbb{D}$ : |z| < 1. The space $N^p$ with the topology given by Stoll's metric [21] becomes an F-algebra. N. Mochizuki [16] proved that a closed ideal in $N^p$ is a principal ideal generated by an inner function. Consequently, a closed subspace E of $N^p$ is invariant under multiplication by z if and only if it has the form $IN^p$ for some inner function I. We prove that if $\cal{M}$ is a closed ideal in $N^p$ that is dense in the weak topology of $N^p$, then $\cal{M}$ is generated by a singular inner function. On the other hand, if $S_{\mu}$ is a singular inner function whose associated singular measure $\mu$ has the modulus of continuity $O(t^{(p-1)/p})$, then we prove that the ideal $S_{\mu}N^p$ is weakly dense in $N^p$. Consequently, for such singular inner function $S_{\mu}$, the quotient space $N^p/S_{\mu}N^p$ is an F-space with trivial dual, and hence $N^p$ does not have the separation property.

• 대한화학회지
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• 제57권4호
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• pp.461-471
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• 2013

Optimized geometrical structure, atomic charges, molecular electrostatic potential, nonlinear optical (NLO) effects and thermodynamic properties of the title compound N-(2,5-methylphenyl)salicylaldimine (I) have been investigated by using ab initio quantum chemical computational studies. Calculated results showed that the enol form of (I) is more stable than keto form. The solvent effect was investigated for obtained molecular energies, hardneses and the atomic charge distributions of (I). Natural bond orbital and frontier molecular orbital analysis of the title compound were also performed. The total molecular dipole moment (${\mu}$), linear polarizability (${\alpha}$), and first-order hyperpolarizability (${\beta}$) were calculated by B3LYP method with 6-31G(d), 6-31+G(d,p), 6-31++G(d,p), 6-311+G(d) and 6-311++G(d,p) basis sets to investigate the NLO properties of the compound (I). The standard thermodynamic functions were obtained for the title compound with the temperature ranging from 200 to 450 K.

• Journal of Electrical Engineering and information Science
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• 제2권5호
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• pp.65-71
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• 1997

We present heterojunction solar cells with a structure of metal/a-Si:H(n-i-p)/poly-Si(n-p)/metal for the terrestrial applications. This cell consists fo two component cells: a top n-i-p junction a-Si:Hi cell with wide-bandgap 1.8eV and a bottom n-p junction poly-Si cell with narrow-bandgap 1.1eV. The efficiency influencing factors of the solar cell were investigated in terms of simulation an experiment. Three main topics of the investigated study were the bottom cell with n-p junction poly-Si, the top a-Si:H cell with n-i-p junction, and the interface layer effects of heterojunction cell. The efficiency of bottom cell was improved with a pretreatment temperature of 900$^{\circ}C$, surface polishing, emitter thickness of 0.43$\mu\textrm{m}$, top Yb metal, and grid finger shading of 7% coverage. The process optimized cell showed a conversion efficiency about 16%. Top cell was grown by suing a photo-CVD system which gave an ion damage free and good p/i-a-Si:H layer interface. The heterojunction interface effect was examined with three different surface states; a chemical passivation, thermal oxide passivation, and Yb metal. the oxide passivated cell exhibited the higher photocurrent generation and better spectral response.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집A
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• pp.217-222
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• 2001

For the life evaluating of notched members, it is the best way that performing the real fatigue test of structure containing notch. But this method required generally much times and costs to evaluate fatigue life. So, generally we use the modified S-N curve or several methods to predict fatigue life. In this study, crack initiation life was evaluated by fatigue testing the SAE keyhole specimen and smooth specimen made of Al 7075-T6 alloys using the constant load then obtained S-N curve of smooth specimen and P-N curve of SAE keyhole specimen. And, fatigue lives of keyhole specimen are predicted using some life prediction methods (Nominal range I method, Nominal range II method, FEM analysis) for investigating experimented results, and that were compared with experimental data. Predicted fatigue lives by FEM analysis were corresponded with experimental data between 1/3times and 3times on the whole, and predicted fatigue lives using modified S-N curve (Nominal range I method, Nominal range II method) were nonconservative compared with that of FEM analysis.

• 대한전자공학회논문지
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• 제18권1호
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• pp.51-56
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• 1981

양호한 특성의 I2L 구조를 구현하기 위한 새로운 공정을 제안하였다. 이 구조에서는, extrinsic base 의 불순물 농도가 높으며, 또한 collector는 불순물 농도가 낮은 intrinsic base와 self align된다. 제안한 공정에서는 spin-on source를 확산원으로 사용하였고, mask 단계를 줄이기 위하여 열처리로 단단해진 spin-on source를 확산 mask로 사용하였다. 이 공정에 의하여 13단 ring oscil-lator를 포함한 시험소자를 6.5μm의 epi 충을 갖는 n/n+ silicon wafer 상에 제작하였다. 제작한 시험소자의 특성은, collector가 세 개인 I2L의 경우 npn transistor의 상향 전류이득은 최대치가 8이었으며, collector가 하나인 I2L의 속도전력적과 최소 전달 지연시간은 각각3.5 pJ과 50ns 이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.105-106
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• 2005

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.