• Nuclear Engineering and Technology
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• v.48 no.3
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• pp.773-777
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• 2016

A betavoltaic battery was prepared using radioactive $^{63}Ni$ attached to a three-dimensional single trenched P-N absorber. The optimum thickness of a $^{63}Ni$ layer was determined to be approximately $2{\mu}m$, considering the minimum self-shielding effect of beta particles. Electroplating of radioactive $^{63}Ni$ on a nickel (Ni) foil was carried out at a current density of $20mA/cm^2$. The difference of the short-circuit currents ($I_{sc}$) between the pre- and post-deposition of $^{63}Ni$ (16.65 MBq) on the P-N junction was 5.03 nA, as obtained from the I-V characteristics. An improved design with a sandwich structure was provided for enhancing performance.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.99-104
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• 2002

lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.109-112
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• 2007

In this paper we describe a robust method of improving precision in monitoring high energy ion implantation processes. Ion implant energy accuracy was measured in the device manufacturing process using an unpatterned implanted layer on an intrinsic p-type silicon wafer. To increase Rs sensitivity to energy at the well implant process, a PN junction structure was formed by P-well and deep N-well implants into the p-type Si wafer. It was observed that the depletion layer formed by the PN junction was very sensitive to energy variation of the well implant. Conclusively, it can be recommended to monitor well implant processes using the Rs measurement method described herein, i.e., a PN junction diode structure since it shows excellent Rs sensitivity to variation caused by energy difference at the well implant step.

• Bulletin of the Korean Chemical Society
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• v.15 no.10
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• pp.891-896
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• 1994

Reactions of mer, trans-$Re({\equiv}NC_6H_5)(PPh_3)_2Cl_3$, I, with $PMe_3$ and $P(OMe)_34 at room temperature, led to mer, trans-$Re({\equiv}NC_6H_5)(PPh_3)(PMe_3)Cl_3$, II, and fac-$Re({\equiv}NC_6H_5)(PPh_3)(P(OMe)_3)Cl_34, III, respectively. The crystal structures of II and III were determined through X-ray diffraction. Ⅱ crystallizes in the orthorhombic system, space group $Pna2_1$ with cell parameters a=19.379(4) ${\AA}$, b=11.867(2) ${\AA}$, c = 12.676(3) ${\AA}$, and Z = 4. Least-squares refinement of the structure led to a $R(wR_2)$ factor of 0.0251 (0.0621) for 2203 unique reflections of $I>2{\sigma}(I)$ and for 306 variables. III crystallizes in the monoclinic system, space group $P2_1/n$ with cell parameters a=11.399(3) ${\AA}$, b=14.718(4) ${\AA}$, c=17.558(5) ${\AA}$, ${\beta}=97.79(2){\circ}$, and Z=4. Least-squares refinement of the structure led to a $R(wR_2)$ factor of 0.0571 (0.1384) for 3739 unique reflections of $I>2{\sigma}(I)$ and for 344 variables. Structural studies showed that the relative orientations of the two phosphines in both complexes are different, probably due to the differences in the coordinating abilities between $PMe_3$ and $P(OMe)_3$ to the 5-coordinate fluxional intermediate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.371-375
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• 2000

In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.

• Journal of the Korean Chemical Society
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• v.44 no.4
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• pp.311-315
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• 2000

The Fe(II)-isothiocyanato complex $trans-[FeH(NCS)(dppe)_2]$ (1) eactedwith iodomethane(Mel) to give methyl isothiocyanide-Fe(n) complex, $trans-FeH(NCS(Me)-S)(dppe)_2]I(2)$. Compound 2 was oxidized to $trans-[Fe(NCS)_2(Ph_2P(O)CH_2CH_2P(O)Ph_2)_2][I_3]$ (3), which was structurally characterized by X-ray diffraction. The molecular structure of 3 showed a bent Fe-NCS group, Crystallographic data for 3: triclinic space group P1,a=11.071(2) A,b=12.054(2)A,c=12.121(1)A, $\alpha=101.02(1){\circ}C{\beta}=95.887(9){\circ}Cr=110.34(1){\circ}C$, $Z=1R(wR_2)=0.0567(0.1294)$.

• Journal of Satellite, Information and Communications
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• v.9 no.3
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• pp.15-21
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• 2014

An electrostatic discharge (ESD) protection device, so called, N-type embedded silicon controlled rectifier (NESCR), was analyzed for high voltage operating I/O applications. A conventional NESCR standard device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latch-up problem during normal operation. However, our modified NESCR_CPS_PPW device with proper junction/channel engineering such as counter pocket source (CPS) and partial P-well structure demonstrates highly latch-up immune current-voltage characteristics with high snapback holding voltage and on-resistance.

• Bulletin of the Korean Chemical Society
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• v.27 no.7
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• pp.1005-1008
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• 2006

The reaction of $AgClO_{4}$ with acyclic potential tridentate N,N,N',N',N''-pentamethyldiethylenetriamine (pmdeta) has given colorless crystals suitable for X-ray crystallography. The crystal structure ($P2_{1}$/n, a = 14.413(1) $\AA$, b = 25.270(2) $\AA$, c = 16.130(1) $\AA$, b = $103.012(1){^{\circ}}$, V = 5723.7(8) A$\AA^{3}$, Z = 4, R = 0.0349) has been solved and refined. Three silver(I) ions connect four pmdeta ligands to produce discrete complex of $[Ag_3(pmdeta)_4](ClO_4)_3$. A pmdeta ligand is bridged to three silver(I) ions, and three other pmdeta ligands are chelated to each silver(I) center in a tridentate mode. Thus, the product is a rare tri-nuclear silver(I) complex with two different chemical environments. $^{13}C$ NMR and $MAS\;^{13}$C NMR indicate that the tri-nuclear silver(I) complex is not rigid in solution. The contact angles and thermal analyses of the complex are measured and discussed.

• Journal of the Korean Statistical Society
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• v.20 no.2
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• pp.191-201
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• 1991

Given a set of data pxN$_{i}$, matrices X$_{i}$ observed from p-variate normal populations $\prod$$_{i}$~N($\mu$$_{I}$, $\Sigma$$_{i}$) for i=1, …, K, the test for equality form of the covariance matrices is to choose a hypothetical model which best explains the homogeneity/heterogeneity structure across the covariance matrices among the hypothesized class of models. This paper describes a test procedure for selecting the best model. The procedure is based on a synthesis of Bayesian and a cross-validation or sample reuse methodology that makes use of a one-at-a-time schema of observational omissions. Advantages of the test are argued on two grounds, and illustrative examples and simulation results are given.are given.

• Nuclear Engineering and Technology
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• v.51 no.5
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• pp.1428-1435
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• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.