• 해양환경안전학회지
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• 제28권4호
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• pp.459-468
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• 2022

천수만과 태안해역의 제한영양염을 평가하기 위해 장기자료 분석과 생물검정실험을 진행하였다. 우선 잠재적인 제한영양염을 평가하기 위해 국가수질측정망에서 제공되는 2004~2016년 동안의 장기 영양염 자료를 이용하였다. 장기자료의 DIN/DIP를 분석한 결과 대부분 16이하로 N 제한이 우세하였지만 N, P, Si의 농도비를 이용한 분석에서는 하계와 추계에는 N 제한이 우세하였고, 동계와 춘계에는 해역에 따라 일부 Si 제한을 보이거나 또는 제한이 나타나지 않았다. 생물검정실험 시 채집된 현장수의 영양염 분석결과, DIN/DIP는 3월과 5월에 모든 정점에서 P 제한을 나타냈고, 7월과 10월에는 N 제한이 우세하였다. N, P, Si의 농도비를 이용한 분석에서 3월과 5월은 P와 Si 제한을 보이거나 제한영양염이 나타나지 않은 정점이 존재하였으나 7월과 10월에는 N 제한이 우세하였다. 실질적인 제한영양염을 평가하기 위해 수행된 생물검정실험 결과 3월에는 특정 제한영양염이 나타나지 않았으나, 5월, 7월 10월에는 NH₄⁺와 NO₃^-가 반응을 보임으로서 이 시기에는 N이 식물플랑크톤 성장에 직접 관여하는 실질적인 제한영양염임을 확인하였다.

• Asian Pacific Journal of Cancer Prevention
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• 제16권18호
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• pp.8239-8245
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• 2016

The p53 gene is inactivated by the human papillomavirus (HPV) E6 protein in the majority of cervical cancers. Treatment of HeLa S3 cells with siRNA for HPV E6 permitted adenovirus-mediated transduction of a p53 gene linked to an upstream estrogen response element (ERE). Our previous study in non-siRNA treated HHUA cells, which are derived from an endometrial cancer and express estrogen receptor ${\beta}$, showed enhancing effects of an upstream ERE on adenovirus-mediated p53 gene transduction. In HeLa S3 cells treated with siRNA for HPV E6, adenovirus-mediated transduction was enhanced by an upstream ERE linked to a p53 gene carrying a proline variant at codon 72, but not for a p53 gene with arginine variant at codon 72. Expression levels of p53 mRNA and Coxsackie/adenovirus receptor (CAR) mRNA after adenovirus-mediated transfer of an ERE-linked p53 gene (proline variant at codon 72) were higher compared with those after non-ERE-linked p53 gene transfer in siRNA-treated HeLa S3 cells. Western blot analysis showed lower ${\beta}$-tubulin levels and comparatively higher p53/${\beta}$-tubulin or CAR/${\beta}$-tubulin ratios in siRNA-treated HeLa S3 cells after adenovirus-mediated ERE-linked p53 gene (proline variant at codon 72) transfer compared with those in non-siRNA-treated cells. Apoptosis, as measured by annexin V binding, was higher after adenovirus-mediated ERE-linked p53 gene (proline variant at codon 72) transfer compared with that after non-ERE-linked p53 gene transfer in siRNA-treated cells.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• 한국주조공학회지
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• 제15권4호
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• pp.360-367
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• 1995

Effects of metal coating treatment on SiC particle on wetting behavior and interfacial strength were studied. Experimental variables are included types of coated metallic films such as Cu and Ni-P, and temperatures of heat-treatment under vacuum. The experimental results concerning wetting phenomena of liquid Al on SiC, showed that coating treatment of metallic film on SiC particles remarkably improves the wetting behavior of liquid Al on SiC, especially in the case of Ni-P coating. The interfacial strength of Al/SiC composites made of coated SiC plate was higher than that of the composite with non-coated SiC plate although the coating treatment was not perfect.

• Biomolecules & Therapeutics
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• 제19권2호
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• pp.261-266
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• 2011

As recent reports suggest that nanoparticles may penetrate into cell membrane and effect DNA condition, it is necessary to assay possible cytotoxic and genotoxic risk. Three different sizes of magnetic nanoparticle silica (MNP@$SiO_2$) (50, 100 and 200 nm diameter) were tested for cytotoxicity and DNA damage using L5178Y cell. MNP@$SiO_2$ had constant physicochemical characteristics confirmed by transmission electron microscope, electron spin resonance spectrometer and inductively coupled plasma-atomic emission spectrometer for 48 h. Treatment of MNP@$SiO_2$ induced dose and time dependent cytotoxicity. At 6 h, 50, 100 or 200 nm MNP@$SiO_2$ decreased significantly cell viability over the concentration of 125 ${\mu}g/ml$ compared to vehicle control (p<0.05 or p<0.01). Moreover, at 24 h, 50 or 100 nm MNP@$SiO_2$ decreased significantly cell viability over the concentration of 125 ${\mu}g/ml$(p<0.01). And treatment of 200 nm MNP@$SiO_2$ decreased significantly cell viability at the concentration of 62.5 ${\mu}g/ml$ (p<0.05) and of 125, 250, 500 ${\mu}g/ml$ (p<0.01, respectively). Furthermore, at 48 h, 50, 100 or 200 nm MNP@$SiO_2$ decreased significantly cell viability at the concentration of 62.5 ${\mu}g/ml$ (p<0.05) and of 125, 250, 500 ${\mu}g/ml$ (p<0.01, respectively). Cellular location detected by confocal microscope represented they were existed in cytoplasm, mainly around cell membrane at 2 h after treatment of MNP@$SiO_2$. Treatment of 50 nm MNP@$SiO_2$ significantly increased DNA damage at middle and high dose (p<0.01), and treatment of 100 nm or 200 nm significantly increased DNA damage in all dose compared to control (p<0.01). Taken together, treatment of MNP@$SiO_2$ induced cytotoxicity and enhanced DNA damage in L5178Y cell.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• 대한기계학회논문집A
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• 제20권4호
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• pp.1301-1308
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• 1996

In order to save the energy and protect the environment, it were studied about ecomaterials with the developed countries as central figure. In the Metal Matrix Composites(MMCs), this trends appeared the development of the MMCs which had excellent mechanical properties in spite of the low volume fraction of reinforcement. Therefore, in this study, fatigue crack growth test, tensile and hardness test were conducted in order to investigate the mechanical and fatigue properties of 5 %, and 10 % $SiC_{p}$/Al composites. As the results, in the tensile and hardness test, tensile strength and hardness increased but fatigue crack growth rate decreased with $SiC_{p}$/Al volume fraction. And in the view of fatigue failured surface through the SEM, fatigue crack initiated around the SiC particle and in low $\Delta{K}$ regions, fatigue creck detoured the SiC particle but crack propagated through the SiC particle in the high $\DeltaK$ regions.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.

• 한국재료학회지
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• 제11권7호
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• pp.585-589
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• 2001

많은 연구결과들은 국부적 용융체의 존재가 고온인장 변형 시 발생하는 내부공극의 발달을 억제할 수 있음을 보고하고 있다. 그러나 이러한 국부적 용융체가 존재한다고 해서 반드시 고변형속도 초소성 현상이 관찰될 수 있는 것은 아니다. 금속기지와 보강재간의 계면에 국부적 용융체의 양이 너무 많이 존재하면 두상간의 결합력이 떨어져 금속기지상으로부터 보강재가 분리되는 현상이 야기될 수 있기 때문이다. 그러므로, $Si_3$$N_{4p}$ 2124 Al 복합재의 초소성 유동 특성을 이해하기 위해 변형온도에 따른 미세구조 변화와 계면특성을 조사하였다. 본 연구를 룽해 $Si_3$$N_{4p}$ 2124 Al 복합재에서 Al-기지와 $Si_3$$N_{4p}$ 강화상간의 계면상의 국부적 용융이 시작되는 온도부근에서는 큰 초소성 특성이 얻어지지만, 국부적 용융이 시작되는 온도를 지난 인장온도범위에서는 오히려 초소성 특성이 현저하게 저하되는 현상이 관찰되었다. 위의 실험결과는 $Si_3$$N_{4p}$ 2124 Al복합재의 고변형속도 초소성 거동에 기여하는 최적의 액상량이 존재한다는 것을 의미한다.