• Journal of the Korean Mathematical Society
• /
• v.42 no.1
• /
• pp.111-127
• /
• 2005

Let B and S be the unit ball and the unit sphere in $\mathbb{C}^n$, respectively. Let ${\sigma}$ be the normalized Lebesgue measure on S. Define the Privalov spaces $N^P(B)\;(1\;<\;p\;<\;{\infty})$ by $$N^P(B)\;=\;\{\;f\;{\in}\;H(B) : \sup_{0 where H(B) is the space of all holomorphic functions in B. Let ${\varphi}$ be a holomorphic self-map of B. Let ${\mu}$ denote the pull-back measure ${\sigma}o({\varphi}^{\ast})^{-1}$. In this paper, we prove that the composition operator $C_{\varphi}$ is metrically bounded on $N^P$(B) if and only if ${\mu}(S(\zeta,\delta)){\le}C{\delta}^n$ for some constant C and $C_{\varphi}$ is metrically compact on $N^P(B)$ if and only if ${\mu}(S(\zeta,\delta))=o({\delta}^n)$ as ${\delta}\;{\downarrow}\;0$ uniformly in ${\zeta}\;\in\;S. Our results are an analogous results for Mac Cluer's Carleson-measure criterion for the boundedness or compactness of $C_{\varphi}$ on the Hardy spaces $H^P(B)$.

• Journal of the Korean Chemical Society
• /
• v.17 no.5
• /
• pp.363-370
• /
• 1973

The rate constants of the nucleophilic addition of n-propyl-mercaptan to $\alpha$-cyano-$\beta$-piperonylacrylic acid were determined at various pH and a rate equation which can be applied over wide pH range is obtained. The rate equation reveals that below pH 4.5 the reaction is initiated by the attack of n-propylmercaptan to $\alpha$-cyano-$\beta$-piperonylacrylic acid. At pH 4.5~6.5, however, n-propylmercaptan is added to $\alpha$-cyano-$\beta$-piperonylacrylate ion; at pH 7.04~9.5 the competitive reaction between n-propylmercaptan and n-propylmercaptide ion is anticipated to occur. Above pH 10 the addendum is n-propylmercaptide ion and the acceptor is $\alpha$-cyano-$\beta$-piperonylacrylate ion.

• Journal of Sensor Science and Technology
• /
• v.17 no.5
• /
• pp.346-349
• /
• 2008

A metal-semiconductor-metal (MSM) ultraviolet (UV) photodetector (PD) is proposed as an effective UV sensing device for integration with a GaN n-channel MISFET on auto-doped p-type GaN grown on a silicon substrate. Due to the high hole barrier of the metal-p-GaN contact, the dark current density of the fabricated MSM PD was less than $3\;nA/cm^2$ at a bias of up to 5 V. Meanwhile, the UV/visible rejection ratio was 400 and the cutoff wavelength of the spectral responsivity was 365 nm. However, the UV/visible ratio was limited by the sub-bandgap response, which was attributed to defectrelated deep traps in the p-GaN layer of the MSM PD. In conclusion, an MSM PD has a high process compatibility with the n-channel GaN Schottky barrier MISFET fabrication process and epitaxy on a silicon substrate.

• Proceedings of the Korean Information Science Society Conference
• /
• 1998.10b
• /
• pp.661-663
• /
• 1998

합병 문제는 크기가 각각 l, m(l+m=n)인 두 개의 정렬된 리스트를 하나의 정렬된 리스트로 만드는 문제로 정렬 문제와 그래프 문제 등과 같은 여러 가지 문제를 해결하는데 필요한 중요한 문제이다. p($\theta${{{{ LEFT ( {λlogp} over {log(λ+1)} RIGHT ) }}}}).

• Korean Journal of Mathematics
• /
• v.21 no.4
• /
• pp.401-419
• /
• 2013

Let $n{\geq}0$ be an arbitrary integer. We define the class of almost n-simply presented abelian p-groups. It naturally strengthens all the notions of almost simply presented groups introduced by Hill and Ullery in Czechoslovak Math. J. (1996), n-simply presented p-groups defined by the present author and Keef in Houston J. Math. (2012), and almost ${\omega}_1-p^{{\omega}+n}$-projective groups developed by the same author in an upcoming publication [3]. Some comprehensive characterizations of the new concept are established such as Nunke-esque results as well as results on direct summands and ${\omega}_1$-bijections.

• Korean Journal of Mathematics
• /
• v.30 no.3
• /
• pp.525-532
• /
• 2022

Let 𝓟_n denote the space of all complex polynomials $P(z)=\sum\limits_{j=0}^{n}{\alpha}_jz^j$ of degree n. Let P ∈ 𝓟_n, for any complex number α, D_αP(z) = nP(z) + (α - z)P'(z), denote the polar derivative of the polynomial P(z) with respect to α and B_n denote a family of operators that maps 𝓟_n into itself. In this paper, we combine the operators B and D_α and establish certain operator preserving inequalities concerning polynomials, from which a variety of interesting results can be obtained as special cases.

• Korean Journal of Crystallography
• /
• v.2 no.1
• /
• pp.12-16
• /
• 1991

C18H22N4OS, Mr=342.47, monoclinic, P2₁/c,a=11.802(2), b=31.962(2), c=9.829(2)A, β=100.12(1)˚, V=3694.8A3,F(000)=1472, Z=8, Dx=1.246 Mg m-3, Dm=1.17Mg m-3,λ=0.71073 A, μ=0.15mm-1, T=294 K. final R=0.0856 for 3718 observed reflection (Fo>3σ(Fo)) There are two molecules in an asymmetric unit and a major difference between these molecules is in the C(9)-N(1)-C(6)-C(7) torsion angles [58.8(8)˚and 1(1)˚]. Both molecules have intramolecular N(1)-H(10)'N(3) hydrogen bonds [ 2.613(7) and 2.566(7) A] and assume V-shaped conformation with N(2) atoms at the verices. The two independent molecules are linked by the two N(2)-H(11)'S' hydrogen bonds[3.367(5) A and 3.421(4)A] and the dimergen are held together by van der Waals forces.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.4
• /
• pp.143-148
• /
• 2019

We have successfully fabricated high aspect-ratio GaN-based nanowires on Si substrates using molecular beam epitaxy (MBE) system for high-efficiency hydrogen generation of photoelectrochemical water splitting. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) demonstrated that p-GaN:Mg and p-InGaN nanowires were grown vertically on the substrate with high density. Furthermore, it was also confirmed that the emission wavelength of p-InGaN nanowire can be adjusted from 552 nm to 590 nm. Such high-aspect ratio p-InGaN nanowire structure will be a solid foundation for the realization of ultrahigh-efficiency photoelectrochemical water splitting through sunlight.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.14 no.5
• /
• pp.135-140
• /
• 2004

In Crypto 2002 May analyzed the relation between the size of two primes and private key in unbalanced RSA with small CRT exponent. Also in Crypto 2003 he showed that if $N^{1}$4/ amount of most significant bits(least significant bits) of $d_{p}$ is exposed in balanced RSA with CRT, N can be factored. To prove this he used Howgrave-Graham's Theorem. In this paper we show that if $N^{1}$4/ amount of $d_{p}$ , p is smaller than q, and bigger than $N^{0.382}$ to avoid May's attack, is exposed in unbalanced RSA with small CRT exponent, it is enough to expose $d_{p}$ . We use Coppersmith's theorem with unbalanced primes.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.161-162
• /
• 2011

최근 광전자 분야에서는 미래 에너지 자원에 대한 관심과 함께 GaN 기반 태양전지 연구가 활발히 진행되고 있다. GaN 물질은 높은 전자 이동도와 높은 포화 속도 등 광전자 소자에 유리한 광, 전기적 특성들을 가지고 있다. 또한, In의 함량을 변화시켜가며, 0.7eV에서 3.4eV까지 밴드갭을 조절함으로써, 자외선부터 적외선까지 태양빛 스펙트럼의 대부분을 흡수할 수 있는 장점이 있다. InGaN 태양전지의 효율을 높이기 위해서는 In의 함량을 늘려 밴드갭을 줄이는 것이 중요하다. 하지만 GaN 와 InN 간의 격자 부정합으로 인해 In 함량이 높은 단결정 InGaN 층을 두껍게 성장 하는 것이 어렵다. 때문에 GaN 기반 태양전지 관련 연구 그룹들이 태양전지의 효율 향상을 위해 활성층에 양자우물(MQWs) 구조, Supper Lattice (SLs) 구조와 같이 얇은 InGaN/GaN 층을 주기적으로 반복하여 적층함으로써 높은 조성의 In을 함유한 상질의 InGaN/GaN 층을 성장하는 연구들을 진행해 왔다. 본 연구에서는, p-i-n 구조와 MQW 구조를 갖는 InGaN 기반 태양전지를 제작하여, 각각의 특성을 분석해 봄으로써, In0.1Ga0.9N 태양전지 활성층의 구조에 따른 장/단점에 대해 논의하였다. 먼저 MOCVD를 이용하여 200 nm의 i-In0.1Ga0.9N 활성층을 갖는 p-i-n 구조와 In0.19Ga0.81N/GaN(3 nm/8 nm) MQWs (8 periods) 구조를 갖는 태양전지 에피를 각각 성장하였고, 그 후 공정을 통해 그림 1과 같이 InGaN 태양전지 소자를 제작하였다. 그 후, 각 태양전지의 전류/전압 곡선과 외부양자효율을 측정하여 그림 2와 같은 결과를 얻었다. p-i-n과 MQW 샘플의 외부양자효율은 각각 ~70%, ~25%로 측정 되었다. MQW 샘플의 외부 양자효율이 높지 않음에도 불구하고 p-i-n 구조에 비해 높은 In 함량을 가지고 있으므로, 더 넓은 파장의 빛을 흡수하여, 높은 단락전류(0.778 mA/cm2)를 보이고 있다. 또한 p-i-n 구조에 비해 높은 개방전압(2.3V)를 가지고 있으므로, MQW 샘플이 약 17% 정도 높은 변환효율(1.4%)를 보이고 있다. 이후 추가적으로 p-i-n 과 MQW 구조의 InGaN 태양전지에 나타나는 Voc와 Jsc의 차이를 Polarization 효과를 비롯한 다양한 측면에서 분석해 보고자 한다.