• ETRI Journal
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• v.35 no.4
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• pp.734-737
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• 2013

Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

• Journal of the Institute of Convergence Signal Processing
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• v.3 no.4
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• pp.74-78
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• 2002

For human detecting pyroelectric infrared sensor system using more than 2 sensor devices. By new top and bottom electrode design, 1 sensor can sensing human instead of using 2 sensor system. The poled P(VDF/TrFE) film used for sensor pyroelectric materials. The fabricated sensors NEP (noise equivalent power) and specific detectivity D$^*$ of the device were 9.62 $\times$ 10$10^5$ V/W, 3.95 $\times$ 10$10^-175$ W and 5.06 $\times$ 10$10^5$W under emission energy of 13 ${\mu}W/cm^2$ respectively and It's result is almost same result that using more than 2 sensor system for human detecting.

• Korean Journal of Materials Research
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• v.29 no.6
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• pp.371-377
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• 2019

A flexible piezoelectric energy harvester(f-PEH) that converts tiny mechanical and vibrational energy resources into electric signals without any restraints is drawing attention as a self-powered source to operate flexible electronic systems. In particular, the nanocomposites-based f-PEHs fabricated by a simple and low-cost spin-coating method show a mechanically stable and high output performance compared to only piezoelectric polymers or perovskite thin films. Here, the non-piezoelectric polymer matrix of the nanocomposite-based f-PEH is replaced by a P(VDF-TrFE) piezoelectric polymer to improve the output performance generated from the f-PEH. The piezoelectric hybrid nanocomposite is produced by distributing the perovskite PZT nanoparticles inside the piezoelectric elastomer; subsequently, the piezoelectric hybrid material is spin-coated onto a thin metal substrate to achieve a nanocomposite-based f-PEH. A fabricated energy device after a two-step poling process shows a maximum output voltage of 9.4 V and a current of 160 nA under repeated mechanical bending. Finite element analysis(FEA) simulation results support the experimental results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.51-65
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• 2008

The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metal-ferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.

• Journal of the Korean Society for Nondestructive Testing
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• v.17 no.1
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• pp.23-30
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• 1997

Recently high frequency ultrasonic transducers to employ polyvinylidene fluoride(PVDF) or polyvinylidene fluoride trifluoroethylene P(VDF-TrFE) have been used to detect small flaws in immersion testing. The detection field depending on the water path between the transducer and a specimen and the path in a tested specimen was measured using a PVDF transducer with nominal frequency 80MHz. Also, C-scan and B-scan were performed for the specimens made of Cr-Ni steel with the artificial flaws, the flat-bottom holes with diameter ranging from $50{\mu}m$ to $560{\mu}m$ at 12mm depth. As the result, the flaws with diameter larger than $280{\mu}m$ were detected, but the flaws with the ratio of diameter to wavelength smaller than about 0.48 were not detected. That the smaller flaws could not be detected was attributed to the attenuation of high frequency components in the steel specimens.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.122-122
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• 2018

1. 배경 최근 IoT 기술이 발전함에 따라 각종 전자기기에 들어가는 센서들이 점점 늘어나고 있다. 특히 사용자 중심의 기기들은 기술이 발전함에 따라 집적화가 이루어지면서, 하나의 기기에서 온도, 습도, 조도 등의 다양한 정보를 처리하고 있다. 이에 따라 더 많은 기능을 사용하기 위해, 소모 전력 또한 점차 증가하고 있다. 그러나 부피는 한정되어 있어, 기존 배터리만으로는 증가하는 소모 전력을 모두 보완하기 어렵다. 또한 대표적인 사용자 중심 기기인 스마트폰에서는, 가장 많은 전력을 소모하는 부분이 점점 커지고 있다. 이에 대한 대책으로 버려지는 에너지를 수확하여 전기적인 에너지로 바꿔주는 에너지 하베스팅 기술이 각광을 받고 있다. 에너지 하베스팅 기술은 바람, 진동, 인체의 움직임 등의 기계적 에너지, 태양광, 실내등의 빛 에너지를 전기적인 에너지로 바꿔주는 기술을 말한다. 본 연구에서는 강유전체 고분자 내부에 양자점이 임베딩된 박막을 이용하여, 스마트폰에서 발생하는 빛 에너지와 손가락으로 디스플레이를 터치할 때 발생하는 기계적인 에너지를 모두 수확할 수 있는 새로운 소자를 제시하였다. 소자 내부에 있는 양자점은 빛 에너지를 산란 혹은 흡수하여 발광한 후, 고분자 내부의 전반사를 통해 양 옆에 있는 태양전지로 빛을 전달한다. 또한 컴포짓의 매트릭스를 이루고 있는 강유전체 폴리머인 P(VDF-TrFE)는 강유전 특성을 통해 마찰전기 에너지를 효율적으로 전기 에너지로 전환할 수 있다. 강유전체 특성에 의해 P(VDF-TrFE) 내부에 정렬된 Polarization은 퀀텀닷에 양자구속 스타크 효과(Quantum Confined Stark Effect)를 일으켜 더 긴 파장을 방출한다. 이렇게 바뀐 파장은 실리콘 태양전지에서 더 많이 흡수할 수 있는 영역으로 방출되어 태양전지 출력의 증가를 일으킨다. 마지막으로 실리콘 태양전지의 출력 증가를 보여줌으로써 이를 실험적으로 입증했다.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2004.04a
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• pp.135-138
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• 2004

Conventional piezoelectric lead-zirconate-titanate (PZT) senor has high sensitivity, but it is very brittle. Recently polymer films such as polyvinylidene fluoride (PVDF) and poly(vinylidene fluoride­trifluoroethylene) (P(VDF-TrFE)) copolymer have been used as a sensor. The advantages of polymer sensor are the flexibility and mechanical toughness. Simple process and possible several shapes are also additional advantages. Polymer sensor can be directly embedded in a structure. In this study, nondestructive damage sensitivity of single basalt fiber/epoxy composites was investigated with sensor type and thermal damage using AE and oscilloscope. And AE waveform for epoxy matrix with various damage types was compared to each other. The damage sensitivity of two polymer sensors was rather lower than that of PZT sensor. The damage sensitivity of PVDF sensor did not decrease until thermal damage temperature at $80^{\circ}C$ and they decreased significantly at $110^{\circ}C$ However, the damage sensitivity of P(VDF-TrFE) sensor at $110^{\circ}C$ was almost same in no damage sensor. For both top and side impacts, the difference in arrival time increased with increasing internal and surface damage density of epoxy matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.1
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• pp.72-79
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• 2022

Piezoelectric energy harvesting technologies, which can be used to convert the electricity from the mechanical energy, have been developed in order to assist or power the wearable electronics. To realize non-toxic and biocompatible electronics, the lead-free (Ba_0.85Ca_0.15)(Ti_0.90Zr_0.10)O₃ (BCTZ) nanoparticles (NPs) are being studied with a great attention as flexible energy harvesting device. Herein, piezoelectric hybrid nanocomposites were fabricated using BCTZ NPs-embedded poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] matrix to improve the performance of flexible energy harvester. Output performance of the fabricated energy device was investigated by the well-optimized measurement system during the periodically bending and releasing motions. The generated open-circuit voltage and the short-circuit current of the piezoelectric hybrid nanocomposite-based energy harvester reached up to ~15 V and ~1.1 ㎂, respectively; moreover, the instantaneous power of 3.5 ㎼ is determined from load voltage and current at the external load of 20 MΩ. This research is expected to cultivate a new approach to high-performance wearable self-powering electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.169-170
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• 2006

In this study, ultra thin films of ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer were fabricated on degenerated Si (n+, $0.002\;{\Omega}{\cdot}cm$) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000~5000rpm for 30 seconds. After annealing in a vacuum ambient at $200^{\circ}C$ for 60 min, upper gold electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had $\beta$-phase of copolymer structures. The capacitance on $n^+$-Si(100) wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The typical measured remnant polarization (2Pr) and coercive filed (EC) values measured using a computer controlled a RT-66A standardized ferroelectric test system (Radiant Technologies) were about $0.54\;C/cm^2$ and 172 kV/cm, respectively, in an applied electric field of ${\pm}0.75\;MV/cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.126-132
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• 2017

The power conversion efficiency of organic polymer solar cells was enhanced by introducing a ferroelectric polymer layer at the interface between active layer and metal electrode. The power conversion efficiency was increased by 50% through the enhancement of the open circuit voltage. To investigate the role of the ferroelectric layer on the dissociation process of the excitons, non-radiative portion of the exciton decay was directly measured by using photoacoustic technique. The results show that the ferroelectric nature of the buffer layer does not play any roles on the dissociation process of the excitons, which indicates the efficiency enhancement is not due to the ferroelectricity of the buffer layer.