ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
권호 표지
DOI QR코드

DOI QR Code

Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor

  • Jung, Soon-Won (Components & Materials Research Laboratory, ETRI) ;
  • Na, Bock Soon (Components & Materials Research Laboratory, ETRI) ;
  • Baeg, Kang-Jun (Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute) ;
  • Kim, Minseok (Components & Materials Research Laboratory, ETRI, School of Electrical Engineering, Korea University) ;
  • Yoon, Sung-Min (Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University) ;
  • Kim, Juhwan (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology) ;
  • Kim, Dong-Yu (Heeger Center for Advanced Materials, Gwangju Institute of Science and Technology) ;
  • You, In-Kyu (Components & Materials Research Laboratory, ETRI)
  • Received : 2012.06.26
  • Accepted : 2013.05.02
  • Published : 2013.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

Nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on an organic thin-film transistor with inkjet-printed dodecyl-substituted thienylenevinylene-thiophene copolymer (PC12TV12T) as the active layer is developed. The memory window is 4.5 V with a gate voltage sweep of -12.5 V to 12.5 V. The field effect mobility, on/off ratio, and gate leakage current are 0.1 $cm^2/Vs$, $10^5$, and $10^{-10}$ A, respectively. Although the retention behaviors should be improved and optimized, the obtained characteristics are very promising for future flexible electronics.

Keywords

References

  1. B.H. Park et al., "Lanthanum-Substituted Bismuth Titanate for Use in Non-volatile Memories," Nature, vol. 401, no. 6754, 1999, pp. 6820-684.
  2. K.-H. Kim et al., "Ferroelectric DRAM(FEDRAM) FET with Metal/$SrBi_2Ta_2O_9$/SiN/Si Gate Structure," IEEE Electron Dev. Lett., vol. 23, no. 2, 2002, pp. 82-84. https://doi.org/10.1109/55.981313
  3. I.A. Ukaegbu et al., "A Study of Ferroelectric Properties of the Oscillator Model of PZT-22," ETRI J, vol. 33, no. 1, Feb. 2011, pp. 132-135. https://doi.org/10.4218/etrij.11.0210.0147
  4. S.-M. Yoon et al., "Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below $200^{\circ}C$," Adv. Funct. Mater., vol. 20, 2010, pp. 921-926. https://doi.org/10.1002/adfm.200902095
  5. S.-W. Jung et al., "Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer," Current Appl. Phys., vol. 10, 2010, pp. e58-e60. https://doi.org/10.1016/j.cap.2009.12.014
  6. K.-J. Baeg et al., "Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits," ACS Appl. Mater. Interfaces, vol. 4, 2012, pp. 6176-6184. https://doi.org/10.1021/am301793m
  7. S.K. Hwang et al., "Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation," Adv. Mater., vol. 24, 2012, pp. 5910-5914. https://doi.org/10.1002/adma.201201831
  8. K.-J. Baeg et al., "Polymer Dielectrics and Orthogonal Solvents Effects for High Performance Inkjet-Printed Top-Gated P-Channel Polymer Field-Effect Transistors," ETRI J, vol. 33, no. 6, Dec. 2011, pp.887-896. https://doi.org/10.4218/etrij.11.0111.0321
  9. J. Kim et al., "Highly Soluble Poly(thienylenevinylene) Derivatives with Charge-Carrier Mobility Exceeding $1cm^2V^{-1}s^{-1}$," Chem. Mater., vol. 23, 2011, pp. 4663-4665. https://doi.org/10.1021/cm2021802
  10. S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3rd ed., NJ: Wiley-Interscience, 2007.

Cited by

  1. Inkjet-printed organic thin-film transistor and antifuse capacitor for flexible one-time programmable memory applications vol.64, pp.1, 2013, https://doi.org/10.3938/jkps.64.74
  2. Flexible organic transistors based on a solution-sheared PVDF insulator vol.3, pp.47, 2013, https://doi.org/10.1039/c5tc02488a
  3. Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate vol.33, pp.5, 2013, https://doi.org/10.1116/1.4927367
  4. Non-volatile organic ferroelectric memory transistors fabricated using rigid polyimide islands on an elastomer substrate vol.4, pp.20, 2013, https://doi.org/10.1039/c6tc00083e
  5. High-frequency organic rectifiers through interface engineering vol.7, pp.4, 2013, https://doi.org/10.1557/mrc.2017.100
  6. pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories vol.10, pp.None, 2013, https://doi.org/10.1021/acs.jpclett.9b00864
  7. Vacuum-free fabrication of a low-voltage multi-bit memory device based on a ferroelectric polymer and photosensitive film vol.14, pp.2, 2013, https://doi.org/10.1049/mnl.2018.5414
  8. Solution-Processed Nonvolatile Organic Transistor Memory Based on Semiconductor Blends vol.11, pp.8, 2013, https://doi.org/10.1021/acsami.8b20571
  9. Recent Advance of Flexible Organic Memory Device vol.1, pp.1, 2013, https://doi.org/10.22895/jse.2020.0009