• Korean Journal of Materials Research
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• v.19 no.4
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• pp.228-231
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• 2009

Phase transition in ferroelectric polymer is very interesting behavior and has been widely studied for real device applications, such as actuators and sensors. Through the phase transition, there is structural change resulting in the change of electrical and optical properties. In this study, we fabricated the Febry-Perot interferometer with the thin film of ferroelectric P(VDF-TrFE) 50/50 mol% copolymer, and thermo-optical properties were investigated. The effective thermo-optical coefficient of P(VDF-TrFE) was obtained as $2.3{\sim}3.8{\times}10^{-4}/K$ in the ferroelectric temperature region ($45^{\circ}C{\sim}65^{\circ}C$) and $6.0{\times}10^{-4}/K$ in the phase transition temperature region ($65^{\circ}C{\sim}85^{\circ}C$), which is a larger than optical silica-fiber and PMMA. The resonance transmission peak of P(VDF-TrFE) with the variation of temperature showed hysteretic variation and the phase transition temperature of the polymer in heating condition was higher than in the cooling condition. The elimination of the hysteretic phase transition of P(VDF-TrFE) is necessary for practical applications of optical devices.

• Journal of IKEEE
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• v.25 no.2
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• pp.322-329
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• 2021

In this study, a method for improving the light extraction efficiency of organic light emitting diodes was presented using the polymer Poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)] having an island surface structure after annealing. Polydimethylsiloxane (PDMS) imprinted on the island-structured P(VDF-TrFE) surface has a spike structure, which improves the external light extraction efficiency aroud 20%. It was confirmed that the produced film showed a low haze characteristic of 8.2, and the Current and external quantum efficiency could be improved without pixel blur due to the excellent transmittance of 93.4%.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.232-233
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• 2001

2차 비선형광학 물질이 높은 응용성을 갖기 위해서는 큰 2차 비선형광학 계수뿐만 아니라 넓은 파장 영역에 걸친 투명성을 가지고 있어야 한다. vinylidene fluoride(VDF)와 trifluoroethylene(TrFE)가 공중합된 f(VDf-TrFE) 공중합체는 이러한 조건을 갖추고 있는 강유전성 물질이다. 우리는 몰비율이 72：28인 P(VDF-TrFE)을 ITO기판위에 casting하고 corona 극화한 뒤, 두 개의 입력 파장(1064nm, 532nm)에 대한 2차 조화파 발생 실험을 실시하고 Herman과 Hayden의 마커무의 식을 이용하여 2차 비선형 광학 계수를 측정하였다. (중략)

• The Journal of the Acoustical Society of Korea
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• v.23 no.4E
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• pp.120-124
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• 2004

A new type of high frequency wideband ultrasonic transducer with a separation between a transmitter and a receiver was proposed and its characteristics were simulated using a PSpice model. The piezoelectric ceramic $PbTiO_{3}$ as a transmitter and the piezoelectric copolymer P(VDF- TrFE) as a receiver were used for high sensitivity and wide bandwidth, respectively. The characteristics of the focusing transducer with center frequency of approximately 35MHz fabricated in this study showed very wide bandwidth, which could give an axial spatial resolution better than $30{\mu}m$ in B-mode image for biological tissues.

• Proceedings of the Acoustical Society of Korea Conference
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• autumn
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• pp.357-358
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• 2004

생체 피부하 약 5mm이내 영역에 대한 고분해능의 B-모드 영상을 얻는 데 사용할 수 있는 축 방향 분해능 $30{\mu}m$ 이하인 VHF 대역 초음파 트랜스듀서로서 용융석영을 음향버퍼의 하여 그 양단에 송신용 2-2 composite와 수신용 P(VDF-TrFE)를 설치한 송수신 분리형의 집속 트랜스듀서의 구조를 새로이 제안하고, 그 전기적 음향적 특성을 시뮬레이션 하였다. 그 결과, 2-2 composite 투께 $18{\mu}m$와 P(VDF-TrFE) 두께 $12{\mu}m$의 트랜스듀서는 중심주파수 43.0MHz, 비대역 $74\%$이며, 삽입손실이 25dB인 비교적 우수한 트랜스듀서가 될 수 있음을 알았다.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.72-76
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• 2020

The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V^-1s^-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.85-86
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• 2007

A poly(vinylidene fluoride-trifluoroethyene) (P(VDF-TrFE)) copolymer thin film having ${\beta}$ phase was prepared by sol-gel method. The electrical properties of the film were studied to evaluate the possibility for appling to a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurement revealed that the Au/P(VDF-TrFE)/Si structure with a 4 wt% film had a memory window width of about 0.5V for a bias voltage sweep of 1V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.566-570
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• 2010

Electro-optic modulators based on 25 monolayer langmuir-blodgett films of vinylidene fluoride and trifluoroethylene, P(VDF-TrFE), were fabricated. The LB films were prepared by transferring the monolayers on to an ITO coated glass with a surface pressure of 5 dyne/cm by use of the langmuir-schaefer deposition method. Measurement of the electro-optic coefficient has been carried out using a simple reflection techique. The E/O coefficient was found to be 154.9 pm/V and that value remained stable for at least 50 days.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.157-160
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• 2019

P(VDF-TrFE-CFE) (Poly (vinylidene fluoride-trifluoroethylene-chlorofluoroethylene)), which exhibits a high electrostriction of about 7%, can transmit tactile output as vibration or displacement. In this study, we investigated the applicability of P(VDF-TrFE-CFE) to wearable piezoelectric actuators. The P(VDF-TrFE-CFE) layers were deposited through spin-coating, and interspaced with patterned Ag electrodes to fabricate a two-layer $3.5mm{\times}3.5mm$ device. This layered structure was designed and fabricated to increase the output and displacement of the actuator at low driving voltages. In addition, a laser vibrometer and piezoelectric force microscope were used to analyze the device's vibration characteristics over the range of ~200~4,200 Hz. The on-off characteristics were confirmed at a frequency of 40 Hz.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.226-231
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• 1999

Pyroelectric infrared sensors have been fabricated using P(VDF/TrFE) film with pyroelectric effect. The weight percent and thickness of the poled P(VDF/TrFE) film are 75/25 percent and $25\;{\mu}m$ respectively. For easier fabrication and connection method new top and bottom electrodes design was adapted for human body detecting pyroelectric infrared sensor. An aluminum infrared absorption electrode and bottom electrode were deposited by thermal evaporator. And the device was mounted in TO-5 housing to detect infrared light of $5.5{\sim}14\;{\mu}m$ wavelength. The responsibility, NEP (noise equivalent power) and specific detectivity $D^*$ of the device were $9.62{\times}10^5\;V/W$, $3.95{\times}10^{-7}\;W$ and $5.06{\times}10^5\;cm/W$ under emission energy of $13\;{\mu}W/cm^2$ respectively.