Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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P(VDF-TrFE) Thin Film Transistors using Langmuir-Blodgett Method

Langmuir-Blodgett 법을 이용한 P(VDF-TrFE) 박막 트랜지스터

  • Kim, Kwang-Ho (Division of Energy & Optical Technology Convergence, Cheongju University)
  • 김광호 (청주대학교 에너지.광기술융합학부)
  • Received : 2020.06.15
  • Accepted : 2020.06.22
  • Published : 2020.06.30
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Abstract

The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V-1s-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

Keywords

References

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