• Journal of Ceramic Processing Research
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• 제20권1호
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• pp.18-23
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• 2019

Chemical looping combustion (CLC) is a promising carbon capture and storage (CCS) technology whose efficiency and cost primarily relies on the oxygen carrier materials used. In this paper, gadolinium-doped ceria (GDC, Ce0.9Gd0.1O1.95) was added as a promoter to improve the oxygen transfer rate of MgMnO3-δ oxygen carrier materials. Increasing GDC content significantly increased the oxygen transfer rate of MgMnO3-δ-GDC composites for the reduction reaction due to an increase in the surface adsorption of CH4 via oxygen vacancies formed on the surface of the GDC. On the other hand, the oxygen transfer rate for the oxidation reaction decreased linearly with increasing GDC content due to the oxygen storage ability of GDC. Adsorbed oxygen molecules preferentially insert themselves into oxygen vacancies of the GDC lattice rather than reacting with (Mg,Mn)O to form MgMnO3-δ during the oxidation reaction.

• Journal of Ceramic Processing Research
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• 제21권2호
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• pp.148-156
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• 2020

We investigated NiFe2O4/Ce0.9Gd0.1O1.95 (GDC) composites as oxygen carrier materials for chemical looping hydrogen production (CLHP). CLHP is a promising technology to simultaneously capture carbon dioxide and produce hydrogen from fossil fuels. We found that increasing GDC content increased the amount of the hydrogen production of NiFe2O4/GDC composites. Moreover, the oxygen transfer rate for the re-dox reaction increased significantly with increasing GDC content. GDC may affect the reaction kinetics of NiFe2O4/GDC composites. The finely dispersed GDC particles on the surface of NiFe2O4 can increase the surface adsorption of reaction gases due to the oxygen vacancies on the surface of GDC, and enlarge the active sites by suppressing the grain growth of NiFe2O4. The NiFe2O4/15wt% GDC composite showed no significant degradation in the oxygen transfer capacity and reaction rate during several re-dox cycles. The calculated amount of hydrogen production for the NiFe2O4/15wt% GDC composite would be 2,702 L/day per unit mass (kg).

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.372-377
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• 2018

MgO or gadolinium-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{2-{\delta}}$) was added as a promoter to improve the oxygen transfer kinetics of $MgMnO_3$ oxygen carrier material for chemical looping combustion. Neither MgO nor GDC reacted with $MgMnO_3$, even at the high temperature of $1100^{\circ}C$. The average oxygen transfer capacities of $MgMnO_3$, 5 wt% $MgO-MgMnO_3$, and 5 wt% $GDC-MgMnO_3$ were 8.74, 8.35, and 8.13 wt%, respectively. Although the addition of MgO or GDC decreased the oxygen transfer capacity, no further degradation was observed during their use in 5 redox cycles. The addition of GDC significantly improved the conversion rate for the reduction reaction of $MgMnO_3$ compared to the use of MgO due to an increase in the surface adsorption process of $CH_4$ via oxygen vacancies formed on the surface of GDC. On the other hand, the conversion rates for the oxidation reaction followed the order 5 wt% $GDC-MgMnO_3$ > 5 wt% $MgO-MgMnO_3$ >> $MgMnO_3$ due to morphological change. MgO or GDC particles suppressed the grain growth of the reduced $MgMnO_3$ (i.e., (Mg,Mn)O) and increased the specific surface area, thereby increasing the number of active reaction sites.

• 한국수소및신에너지학회논문집
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• 제14권3호
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• pp.258-267
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• 2003

A new kind of oxygen carrier material is tested for chemical-looping combustion. NiO, CoO, $Fe_2O_3$ is chosen as metal oxide and YSZ as a binder. Hydrogen fuel is reacted with metal oxide (reduction of metal oxide) and then the reduced metal is successively oxidized by air. Dissolution method is examined to prepare the oxygen carriers. The effects of reaction temperature are measured by a TGA, mechanical strength and regenerability after 10 cycle are examined. $Fe_2O_3/YSZ$ oxygen carrier is bested in mechanical strength and we consider that NiO/YSZ after 3rd cycle are good oxygen carrier in according to reactor design.

• Journal of Ceramic Processing Research
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• 제21권1호
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• pp.57-63
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• 2020

Chemical looping hydrogen production (CLHP) is an attractive technology for H₂ production due to its ability to produce H₂ and capture CO₂ from fossil fuels simultaneously. In this paper, we present MgFe₂O₄ as an oxygen carrier material with high efficiency, low cost, and stable properties for CLHP. The redox reactions occurred reversibly in the fuel, steam, and air reactor as MgFe₂O₄→MgO/Fe, MgO/Fe→MgO/Fe₃O₄, and MgO/Fe₃O₄→MgFe₂O₄, respectively. The oxygen transfer capacities of MgFe₂O₄ for 5% H₂/N₂ and 5% CO/N₂ gases were about 23 wt% at 900 ℃. Both the oxygen transfer capacity and rate were well maintained during 10 redox cycles at 900 ℃. No phase changes or agglomeration occurred as the redox cycle number increased. Similarly, MgFe₂O₄ did not exhibit significant degradation in its total amount or maximum rate of H₂ production during four redox cycles. The average calculated amount of H₂ production for MgFe₂O₄ was 2,806 L/day per unit mass (kg).

• Environmental Engineering Research
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• 제19권4호
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• pp.299-308
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• 2014

This study presents a review on Chemical looping combustion (CLC) development, design aspects and modeling. The CLC is in fact an unmixed combustion based on the transfer of oxygen to the fuel by a solid oxygen carrier material avoiding the direct contact between air and fuel. The CLC process is considered as a very promising combustion technology for power plants and chemical industries due to its inherent capability of $CO_2$ capturing, which avoids extra separation costs of the of $CO_2$ from the rest of flue gases. This review covers the issues related to oxygen carrier materials. The modeling works are reviewed and different aspects of modeling are considered, as well. The main drawbacks and future research and prospects are remarked.

• 공업화학
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• 제30권1호
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• pp.43-48
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• 2019

본 연구는 매체순환연소공정용 산소전달입자로서 $CaSnO_3$ 입자의 타당성을 조사하기 위해 수행하였다. $CaSnO_3$은 페롭스카이트 구조를 가지고, 반복되는 환원-산화 반응 후에도 구조적안정성을 보였다. 산소전달량은 환원 반응 시 결정구조 변화를 통해 계산된 이론 수치와 거의 동일한 15.4 wt%를 가졌다. 10번의 환원과 산화 반응 후에, 산소전달량과 산소전달속도는 작동 온도에서 일정하게 유지되었다. 결론적으로, $CaSnO_3$ 입자는 CLC의 산소 운반체로서 좋은 대체 물질이 될 수 있다고 판단하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.126-127
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• 2008

The effects annealing conditions on the electrical conductions of SOI substrate were studied. The reversible change of resistance and carrier concentration in accordance with the annealing temperature were observed for the first time in SOI substrate. The thermal donors due to interstitial oxygen atoms contribute the change of resistance and carrier concentration. Final1y, we show that the furnace annelaing at $500^{\circ}C$ at final heat treatment stage is effective for eliminate the thermal donor effects in SOI substrate.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.601-606
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• 1998

ZnO thin film had been deposited on the glass by sputtering method, and the electrical and structural properties were investigated. When the rf power was 180W and sputtering was 10 m Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$\times10^{-4}\Omega\cdot{cm}$) and then carrier concentration and Hall mobility were $6.27\times10^{20} cm^{-3} and 22.04 cm^2/V\cdot$s, respectively. The undoped ZnO thin film had about 10$\times10^{14}\Omega\cdot cm$ resistivity when oxygen content was 10% or more at room temperature. When the oxygen content was 50% and below and sputtering pressure was 1.0$\times$1.0 \ulcorner Torr, the surface morphology of thin film observed by SEM was overall uniform.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.109-115
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• 2005

The study of Oxygen Vacancy on SnO$_2$ thin films grown by thermal chemical vapor deposition were investigated with different substrate temperature. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks were changed with increasing substrate temperature. It was concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. Hall effect measurements showed that the carrier density was decreased as increasing deposition time from 10 to 30 min., but increased for the deposition of 60 min.