A Study on Electrical Resistivity Variation of Zinc Oxide Thin Film

산화아연 박막의 전기저항률 변화에 관한 연구

  • 정운조 (한려대학교 정보통신학과) ;
  • 박계춘 (목표대학교 공대 전기공학과)
  • Published : 1998.08.01

Abstract

ZnO thin film had been deposited on the glass by sputtering method, and the electrical and structural properties were investigated. When the rf power was 180W and sputtering was 10 m Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$\times10^{-4}\Omega\cdot{cm}$) and then carrier concentration and Hall mobility were $6.27\times10^{20} cm^{-3} and 22.04 cm^2/V\cdot$s, respectively. The undoped ZnO thin film had about 10$\times10^{14}\Omega\cdot cm$ resistivity when oxygen content was 10% or more at room temperature. When the oxygen content was 50% and below and sputtering pressure was 1.0$\times$1.0 \ulcorner Torr, the surface morphology of thin film observed by SEM was overall uniform.

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References

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