The Second Harmonic Current Characteristic of PZT Thin Film Capacitor

PZT 박막 캐패시터의 2차 고조파 전류특성

  • 김동철 (고려대학교 공대 전기공학과) ;
  • 박봉태 (고려대학교 공대 전기공학과) ;
  • 고중혁 (고려대학교 공대 전기공학과) ;
  • 문병무 (고려대학교 공대 전기공학과)
  • Published : 1998.08.01

Abstract

A method for the nondestructive read-out of the memory in ferroelectric thin films is demonstrated using the detection second harmonic currents introduced in the ferrolelectric capacitor as a response to an ac signal. The sign and phase of the second harmonic current depends on the polarized state +$P_r or -P_r$, The studied ferroelectric PZT thin film is found to have desirable features for the use as a memory element. This method and material seems as a promising approach for the nonvolatile memory storage.

Keywords

References

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