• 융복합기술연구소 논문집
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• 제4권1호
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• pp.21-27
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• 2014

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8:Eu^{2+}$, $MAlSiN_3:Eu^{2+}$ M-SiON(M=Ca, Sr, Ba), ${\alpha}/{\beta}-SiAlON:Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440-460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.119-120
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• 2007

반도체 공정에서 사용되는 ILD막질 중 oxy-nitrde(SiON) film은 contact etch stopper, photo공정을 위한 ARL(anti-reflection lay떠 그리고, 후속공정의 plasma damage에 대한 blocking layer로서의 역할을 담당하며 많은 공정에 널리 사용되고 있다. 그러나 막질 자체의 불완전성 (trap site, dangling bond)에 의해 cell current instability(CCI) 특성을 악화 시킬 수 있어 이에 대한 원인규명 및 대책이 요구되었다. 본 연구는 미국 S사(社) super flash memory에서 oxy-nitride 막질 증착 시의 gas flow량에 따른 CCI 특성변화를 연구하고 최적의 공정조건을 제시하고자 한다.

• 한국재료학회지
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• 제33권7호
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• pp.309-314
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• 2023

This study aimed to address the limitations of traditional plasma nitriding methods by implementing a short-term plasma oxy-nitriding treatment on the surface of AISI 420 martensitic stainless steel. This treatment involved the sequential formation of nitride and oxide layers, to enhance surface hardness and corrosion resistance, respectively. The process resulted in the formation of a 20 ㎛-thick nitride layer and a 3 ㎛-thick oxide layer on the steel surface. Initially, the hardness increased by 2.2 times after nitriding, followed by a subsequent decrease of approximately 31 % after oxidation. While the nitriding process reduced corrosion resistance, the subsequent oxidation process led to the formation of a passive oxide film, effectively resolving this issue. The pitting corrosion of the oxide passive film started at 82.6 mVssc, providing better corrosion resistance characteristics than the nitride layer. Consequently, the trade-off between surface hardness and corrosion resistance in plasma oxy-nitrided AISI 420 martensitic stainless steel is anticipated to be recognized as an innovative and comprehensive surface treatment process for biomedical components.

• 한국분말재료학회지
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• 제15권6호
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• pp.489-495
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• 2008

Colored tantalum oxy-nitride (TaON) and tantalum nitride ($Ta_{3}N_{5}$) were synthesized by ammonolysis. Oxygen deficient tantalum oxides ($TaO_{1.7}$) were produced by a titration process, using a tantalum chloride ($TaCl_5$) precursor. The stirring speed and the amount of $NH_{4}OH$ were important factors for controling the crystallinity of tantalum oxides. The high crystallinity of tantalum oxides improved the degree of nitridation which was related to the color value. Synthesized powders were characterized by XRD, SEM, TEM and Colorimeter.

• 인포메이션 디스플레이
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• 제13권1호
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• pp.21-30
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• 2012

• 한국결정성장학회지
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• 제22권5호
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• pp.233-240
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• 2012

백색 발광다이오드(white light-emitting diodes)를 이용한 광소자는 소비전력이 상대적으로 작고, 안정적이며, 수은과 같은 유해 중금속을 포함하지 않기 때문에, 에너지 절약 및 친환경 산업측면에서 유망한 산업으로 급속히 발전하고 있다. 국내의 경우 LED 조명의 효율, 신뢰성, 연색성을 향상시키는데 필수 소재인 형광체의 기술 확보에 대한 관심이 높아지고 있다. 이러한 관점에서 기존의 YAG, TAG, silicate 계열 산화물 형광체 뿐만 아니라 고온특성이 우수한 산/질화물계 형광체 개발에 대한 관심이 높아지고 있다. 특히 산/질화물계 형광체 조성에서 $M_2Si_5N_8$ : $Eu^{2+}$, $MAlSiN_3$ : $Eu^{2+}$ M-SiON(M = Ca, Sr, Ba), ${\alpha}/{\beta}$-SiAlON : $Eu^{2+}$과 같은 재료는 440~460 nm 영역에서의 넓은 여기파장과 우수한 발광효율로 청색 LED 칩을 이용한 백색 LED에 넓게 사용되고 있다. 이 논문에서는 이러한 산/질화물계 형광체 조성의 결정학적, 광학적 특성 및 응용에 대해서 정리하였다. 또한 최근에 주목받고 있는 양자점(quantum dots) 형광체를 응용한 white LEDs의 개발동향에 대해서도 알아보도록 한다.

• E2M - 전기 전자와 첨단 소재
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• 제2권1호
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• pp.25-32
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• 1989

Silicon Nitride, Silicon OxyNitride, Silicon Oxide film을 RF Sputter법으로 제작하였다. RF power 1kw에서 산소 공급량과 기관온도에 따라 제작된 막의 조성을 ESCA로 분석하였으며 산소 공급량과 기판온도의 증가에 따라 막에서의 산소함량이 크게 증가하였다. 또한 막의 밀도, 굴절율, 유전율은 산소함량의 증가에 따라 감소하였고 분극율은 Clausius-Mossotti방정식에서 얻을 수 있었다.

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2001년도 춘계총회 및 학술발표회
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• pp.37-37
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• 2001

• 세라미스트
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• 제21권1호
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• pp.80-97
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• 2018

To realize a high luminous efficacy and a high emission color purity for the white-LEDs, the understanding for luminescence properties of the phosphors is significantly important because the performance of white-LEDs is directly affected by the luminescence properties of the phosphors. In this paper, therefore, we reviewed some commercially available $Eu^{2+}$- and $Ce^{3+}$- activated phosphors and discussed for the luminescence properties of these phosphors.

• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.816-820
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• 2013

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.