• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.310-310
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• 2012

ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with ${\alpha}=3.3{\times}10^{-2}eV/K$ and ${\beta}=8.6{\times}10^3K$. The low- and high-temperature activation energies were 9 and 28 meV, respectively. The exciton radiative lifetime of the ZnO thin films showed a non-linear behavior, which was established using a quadratic equation.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.69.2-69.2
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• 2018

전기화학적 양극산화법에 의해 형성하는 TiO2 나노튜브층은 넓은 비표면적과 규칙적인 구조를 가지고 있어 광촉매, 태양 전지, 생체재료 분야 등 다양한 분야에서의 응용이 되고 있으며, 국내 외 많은 연구가 보고 되고 있다. 특히, 나노튜브 층의 성장 거동에 미치는 인자로는 용액의 pH, 점도 등의 전해질의 물성, 인가전압, 시간 등이 있으며, 그에 대해 많은 연구가 이루어졌고 보고되고 있다. 최근 들어, 앞서 설명한 인자 이외에 양극산화에 사용되는 기판의 특성(미세구조, 결정구조, 결함, 첨가 원소 등)이 나노튜브층 성장거동에 영향을 미친다고 보고되었다. 따라서 본 연구에서는 전이금속으로 이루어진 Ti합금을 이용하여 첨가되는 합금원소가 산화막 성장 거동과 형태에 미치는 영향에 대해 조사 하였다. 본 연구에서는 Ti-Ni, Ti-Fe, Ti-Co 3종류 합금을 고진공 아크용해법으로 제조 하였으며, $1000^{\circ}C$에서 24시간 균질화 열처리를 하였다. 모든 합금은 최종 두께 2mm가지 냉간압연 하였으며, 양극산화는 동일한 조건에서 하였다. 생성된 나노튜브층의 표면 및 단면은 FE-SEM을 통해 관찰 하였다.

• 한국세라믹학회지
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• 제54권2호
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• pp.121-127
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• 2017

Gadolinium tetraboride ($GdB_4$) was synthesized by reduction of $Gd_2O_3$ using boron carbide in presence of carbon. Effect of temperature on product quality was investigated. Pure $GdB_4$ powder was obtained in vacuum at $1500^{\circ}C$. Pressureless sintering experiments revealed that sintering takes place only above $1600^{\circ}C$. A maximum density of 77.1% of the theoretical value was obtained at $1800^{\circ}C$ by pressureless sintering. Hot pressing resulted in 95.5% of theoretical density at the lower temperature of $1700^{\circ}C$ under 35 MPa pressure. Hardness and fracture toughness of dense $GdB_4$ were measured and found to be 21.4 GPa and $2.3MPa{\cdot}m^{1/2}$, respectively. After exposure to air at $900^{\circ}C$, the formation of a porous and non-protective oxide layer was observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.17-20
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• 1999

The retention and fatigue properties of ferroelectric LiNbO$_3$ thin films were studied. Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO$_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. The I$_{D}$-V$_{G}$ characteristics of MFSFET\`s showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin film. The ferroelectric capacitors showed practically no polarization degradation up to about 10$^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The retention properties of the LiNbO$_3$ thin films were quite good up to about 10$^{3}$ s . s .

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.48-52
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• 2014

In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set reset current are carried out to analyze the feasibility of scaling down and compared with values in ITRS roadmap. Simulation results show that width and length ratio of the phase change material (PCM) is key parameter of scaling down in VPCRAM. Thermal simulation results provide the design guideline of VPCRAM. Optimization of phase change material in VPCRAM can be achieved by oxide sidewall process optimization.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.349-350
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• 2012

Porous silicon (PS) was prepared by electrochemical anodization. Ultra-thin zinc oxide (ZnO) capping layers were deposited on the PS by plasma-assisted molecular beam epitaxy (PA-MBE). The effects of the ZnO capping layers on the properties of the as-prepared PS were investigated using scanning electron microscopy (SEM) and photoluminescence (PL). The as-prepared PS has circular pores over the entire surface. Its structure is similar to a sponge where the quantum confinement effect (QCE) plays a fundamental role. It was found that the dominant red emission of the porous silicon was tuned to white light emission by simple deposition of the ultra-thin ZnO capping layers. Specifically, the intensity of white light emission was observed to be enhanced by increasing the growth time from 1 to 3 min.

• 한국잡초학회지
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• 제31권2호
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• pp.146-151
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• 2011

메타세콰이아(Metasequoia glyptostroboides)의 구과로부터 수증기증류법을 이용하여 정유를 추출하였고, 정유의 향취를 분석하였으며 이에 함유되어 있는 휘발성 화학성분을 solid-phase microextraction 장치가 장착된 gas chromatography-mass spectrometry를 이용하여 분석하였다. 메타세콰이아의 구과에 함유된 정유는 0.4%이었다. 정유의 주향취는 woody, coniferous, herbal이었으며, 부향취는 minty, spicy, oily이었다. 정유에는 총 9종의 휘발성 유기화합물이 함유되어 있었는데 이들을 화학성분별로 구분하면 탄화수소가 8종 그리고 옥사이드가 1종이었다. 정유에 함유된 휘발성 유기화합물은 limonene(66.18%), ${\delta}$-3-carene(11.11%), ${\beta}$-caryophyllene(6.66%), ${\beta}$-myrcene(5.92%), ${\beta}$-pinene(4.14%), caryophyllene oxide (2.39%), camphene(2.32%), ${\alpha}$-caryophyllene(0.85%), tricyclene(0.43%)이었다. 메타세콰이아 구과로부터얻은 정유의 herbal과 minty 향취는 limonene과 ${\delta}$-3-carene, spicy 향취는 caryophyllene, coniferous 향취는 ${\alpha}$-pinene과 ${\beta}$-pinene, oily 향취는 camphene에 의해 발현된 것이라 판단된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• 한국재료학회지
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• 제22권4호
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• pp.202-206
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• 2012

$CoSi_2$ was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt ($Co(iPr-AMD)_2$) as a precursor and $NH_3$ as a reactant; this reaction produced a highly conformal Co film with low resistivity ($50\;{\mu}{\Omega}cm$). To prevent oxygen contamination, $ex-situ$ sputtered Ti and $in-situ$ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and $O_2$ as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that $CoSi_2$ was in a poly-crystalline state and formed at over $800^{\circ}C$ of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, $CoSi_2$ about 40 nm thick was formed while the $SiO_x$ interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of $CoSi_2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.285-285
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• 2016

Resistive random access memory devices have been widely studied due to their high performance characteristics, such as high scalability, fast switching, and low power consumption. However, fluctuation in operational parameters remains a critical weakness that leads to device failures. Although the random formation and rupture of conducting filaments (CFs) in an oxide matrix during resistive switching processes have been proposed as the origin of such fluctuations, direct observations of the formation and rupture of CFs at the device scale during resistive switching processes have been limited by the lack of real-time large-area imaging methods. Here, a novel imaging method is proposed for monitoring CF formation and rupture across the whole area of a memory cell during resistive switching. A hybrid structure consisting of a resistive random access memory and a light-emitting diode enables real-time monitoring of CF configuration during various resistive switching processes including forming, semi-forming, stable/unstable set/reset switching, and repetitive set switching over 50 cycles.